According to the Iranian Nanotechnology Initiative, using dielectric ultrathin silicon dioxide gates in transistors is usual, but due to some problems these gates cannot be used in nanotransistors. Researchers at Mazandaran University in Iran could find other gates for nanotransistors.
Elaborating on the goal of the research, Ali Bahari, an academic member of Mazandaran University and one of the researchers of this project, said, "Finding a dielectric gate with sublayer and proper electrodes in upcoming nanotransistors" was the main aim of the project.
"This innovation can solve the problems caused by minimizing of electronic chips, optoelectronic chips, data storage in nano scale memories and generally nanoelectrics," Bahari underlined.
He reiterated that in this project unlike other present methods which are used for silicon nitride growth via NH3, N2O and NO, ultra films of silicon nitrides (less than 1 nanometer) are grown by decomposition of inactive molecules of N2 to N in silicon sublayer, which doesn't make problems regarding the usage of formerly applied gases.
In this project silicon nitride is recommended as a dielectric gate for upcoming nanotransistors.
The results of this project show unique properties of this gate in comparison to silicon oxide dielectric gates.
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