James Harris' Profile | Stanford Profiles

All Publications

Influence of Ballastic Electron Contributions in Vertically Integrated Resonant Tunneling Diodes Superlattices and Microstructures Harris, J., S., Rascol, J., J. L., Martin, K., P., Carnahan, R., E., Higgins, R., J., Cury, L. ; 2 (7): 147-150
How Adding Electrons Scrambles the Electronic Spectrum of a Quantum Dot Harris, J., S., Patel, S., R., Stewart, D., R., Marcus, C., M., Gökcedag, M., Alhassid, Y.
A Solar Power System with Gallium Arsenide Solar Cells J. Energy Madewell, J., F., Nussberger, A., A., Harris, J., S.
Simulation and fabrication of a new novel 3D injectable biosensor for high throughput genomics and proteomics in a lab-on-a-chip device. Nanotechnology Esfandyarpour, R., Esfandyarpour, H., Harris, J. S., Davis, R. W. 2013; 24 (46): 465301-?
Abstract

Biosensors are used for the detection of biochemical molecules such as proteins and nucleic acids. Traditional techniques, such as enzyme-linked immuno-sorbent assay (ELISA), are sensitive but require several hours to yield a result and usually require the attachment of a fluorophore molecule to the target molecule. Micromachined biosensors that employ electrical detection are now being developed. Here we describe one such device, which is ultrasensitive, real-time, label free and localized. It is called the nanoneedle biosensor and shows promise to overcome some of the current limitations of biosensors. The key element of this device is a 10 nm wide annular gap at the end of the needle, which is the sensitive part of the sensor. The total diameter of the sensor is about 100 nm. Any change in the population of molecules in this gap results in a change of impedance across the gap. Single molecule detection should be possible because the sensory part of the sensor is in the range of bio-molecules of interest. To increase throughput we can flow the solution containing the target molecules over an array of such structures, each with its own integrated read-out circuitry to allow 'real-time' detection (i.e. several minutes) of label free molecules without sacrificing sensitivity. To fabricate the arrays we used electron beam lithography together with associated pattern transfer techniques. Preliminary measurements on individual needle structures in water are consistent with the design. Since the proposed sensor has a rigid nano-structure, this technology, once fully developed, could ultimately be used to directly monitor protein quantities within a single living cell, an application that would have significant utility for drug screening and studying various intracellular signaling pathways.

View details for DOI 10.1088/0957-4484/24/46/465301

View details for PubMedID 24149048
Ultra-Compact and Low-Loss Polarization Rotator Based on Asymmetric Hybrid Plasmonic Waveguide IEEE PHOTONICS TECHNOLOGY LETTERS Gao, L., Huo, Y., Harris, J. S., Zhou, Z. 2013; 25 (21): 2081-2084
View details for DOI 10.1109/LPT.2013.2281425

View details for Web of Science ID 000325690900014
Theoretical Analysis of GeSn Alloys as a Gain Medium for a Si-Compatible Laser IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Dutt, B., Lin, H., Sukhdeo, D. S., Vulovic, B. M., Gupta, S., Nam, D., Saraswat, K. C., Harris, J. S. 2013; 19 (5)
View details for DOI 10.1109/JSTQE.2013.2241397

View details for Web of Science ID 000323210900003
Real-time, continuous, fluorescence sensing in a freely-moving subject with an implanted hybrid VCSEL/CMOS biosensor BIOMEDICAL OPTICS EXPRESS O'Sullivan, T. D., Heitz, R. T., Parashurama, N., Barkin, D. B., Wooley, B. A., Gambhir, S. S., Harris, J. S., Levi, O. 2013; 4 (8): 1332-1341
View details for DOI 10.1364/BOE.4.001332

View details for Web of Science ID 000322618900008
Highly Selective Dry Etching of Germanium over Germanium-Tin (Ge1-xSnx): A Novel Route for Ge1-xSnx Nanostructure Fabrication NANO LETTERS Gupta, S., Chen, R., Huang, Y., Kim, Y., Sanchez, E., Harris, J. S., Saraswat, K. C. 2013; 13 (8): 3783-3790
Abstract

We present a new etch chemistry that enables highly selective dry etching of germanium over its alloy with tin (Ge1-xSnx). We address the challenges in synthesis of high-quality, defect-free Ge1-xSnx thin films by using Ge virtual substrates as a template for Ge1-xSnx epitaxy. The etch process is applied to selectively remove the stress-inducing Ge virtual substrate and achieve strain-free, direct band gap Ge0.92Sn0.08. The semiconductor processing technology presented in this work provides a robust method for fabrication of innovative Ge1-xSnx nanostructures whose realization can prove to be challenging, if not impossible, otherwise.

View details for DOI 10.1021/nl4017286

View details for Web of Science ID 000323241000053

View details for PubMedID 23834495
Label-free electronic probing of nucleic acids and proteins at the nanoscale using the nanoneedle biosensor BIOMICROFLUIDICS Esfandyarpour, R., Javanmard, M., Koochak, Z., Esfandyarpour, H., Harris, J. S., Davis, R. W. 2013; 7 (4)
View details for DOI 10.1063/1.4817771

View details for Web of Science ID 000323907600016
Two-step growth of high quality Bi2Te3 thin films on Al2O3 (0001) by molecular beam epitaxy APPLIED PHYSICS LETTERS Harrison, S. E., Li, S., Huo, Y., Zhou, B., Chen, Y. L., Harris, J. S. 2013; 102 (17)
View details for DOI 10.1063/1.4803717

View details for Web of Science ID 000318553000022
Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers PHYSICAL REVIEW LETTERS Pavarelli, N., Ochalski, T. J., Murphy-Armando, F., Huo, Y., Schmidt, M., Huyet, G., Harris, J. S. 2013; 110 (17)
Abstract

We studied the optical properties of a strain-induced direct-band-gap Ge quantum well embedded in InGaAs. We showed that the band offsets depend on the electronegativity of the layer in contact with Ge, leading to different types of optical transitions in the heterostructure. When group-V atoms compose the interfaces, only electrons are confined in Ge, whereas both carriers are confined when the interface consists of group-III atoms. The different carrier confinement results in different emission dynamics behavior. This study provides a solution to obtain efficient light emission from Ge.

View details for DOI 10.1103/PhysRevLett.110.177404

View details for Web of Science ID 000318188100016

View details for PubMedID 23679775
Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing JOURNAL OF CRYSTAL GROWTH Chen, R., Huang, Y., Gupta, S., Lin, A. C., Sanchez, E., Kim, Y., Saraswat, K. C., Kamins, T. I., Harris, J. S. 2013; 365: 29-34
View details for DOI 10.1016/j.jcrysgro.2012.12.014

View details for Web of Science ID 000314629300006
Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well JOURNAL OF PHYSICS-CONDENSED MATTER Baranowski, M., Kudrawiec, R., Latkowska, M., Syperek, M., Misiewicz, J., Sarmiento, T., Harris, J. S. 2013; 25 (6)
Abstract

In this study we apply time resolved photoluminescence and contactless electroreflectance to study the carrier collection efficiency of a GaInNAsSb/GaAs quantum well (QW). We show that the enhancement of photoluminescence from GaInNAsSb quantum wells annealed at different temperatures originates not only from (i) the improvement of the optical quality of the GaInNAsSb material (i.e., removal of point defects, which are the source of nonradiative recombination) but it is also affected by (ii) the improvement of carrier collection by the QW region. The total PL efficiency is the product of these two factors, for which the optimal annealing temperatures are found to be ~700 °C and ~760 °C, respectively, whereas the optimal annealing temperature for the integrated PL intensity is found to be between the two temperatures and equals ~720 °C. We connect the variation of the carrier collection efficiency with the modification of the band bending conditions in the investigated structure due to the Fermi level shift in the GaInNAsSb layer after annealing.

View details for DOI 10.1088/0953-8984/25/6/065801

View details for Web of Science ID 000313950600015

View details for PubMedID 23306016
Microneedle biosensor: A method for direct label-free real time protein detection SENSORS AND ACTUATORS B-CHEMICAL Esfandyarpour, R., Esfandyarpour, H., Javanmard, M., Harris, J. S., Davis, R. W. 2013; 177: 848-855
Abstract

Here we present the development of an array of electrical micro-biosensors in a microfluidic channel, called microneedle biosensors. A microneedle biosensor is a real-time, label-free, direct electrical detection platform, which is capable of high sensitivity detection, measuring the change in ionic current and impedance modulation, due to the presence or reaction of biomolecules such as proteins and nucleic acids. In this study, we successfully fabricated and electrically characterized the sensors and demonstrated successful detection of target protein. In this study, we used biotinylated bovine serum albumin as the receptor and streptavidin as the target analyte.

View details for DOI 10.1016/j.snb.2012.11.064

View details for Web of Science ID 000315751000113

View details for PubMedID 23355762
Antiphase domain annihilation during growth of GaP on Si by molecular beam epitaxy JOURNAL OF CRYSTAL GROWTH Lin, A. C., Fejer, M. M., Harris, J. S. 2013; 363: 258-263
View details for DOI 10.1016/j.jcrysgro.2012.10.055

View details for Web of Science ID 000313205400042
Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon OPTICS EXPRESS Edwards, E. H., Lever, L., Fei, E. T., Kamins, T. I., Ikonic, Z., Harris, J. S., Kelsall, R. W., Miller, D. A. 2013; 21 (1): 867-876
Abstract

We demonstrate electroabsorption contrast greater than 5 dB over the entire telecommunication S- and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy design approach; further, this is demonstrated with the thinnest Ge/SiGe epitaxy to date, using a virtual substrate only 320-nm-thick. We use an eigenmode expansion method to model the optical coupling between SOI waveguides and both vertically and butt-coupled Ge/SiGe devices, and show that this reduction in thickness is expected to lead to a significant improvement in the insertion loss of waveguide-integrated devices.

View details for DOI 10.1364/OE.21.000867

View details for Web of Science ID 000315988100111
Towards a Photonic Crystal Mode-Locked Laser NOVEL IN-PLANE SEMICONDUCTOR LASERS XII Leedle, K., Janjua, A., Paik, S., Schnitzer, M. J., Harris, J. S. 2013; 8640
View details for DOI 10.1117/12.2005418

View details for Web of Science ID 000322737200016
Single-Cell Photonic Nanocavity Probes NANO Lett. Shambat, G., Kothapalli, S., R., Provine, J., Sarmiento, T., Harris, J., Gambhir, S., Sam 2013
Magnetic properties of gadolinium substituted Bi2Te3 thin films Appl. Phys. Lett. Harris, J., S., Li, S., Harrison, S., E., Huo, Y., Pushp, A., Yuan, H., T. 2013; 24 (102): 242412
Optical and Electronic Devices for Monolithically Integrated Photonics Circuits Cho, S., Kim, H., Park, B., G., Harris Jr., James, S. 2013
Design of High-Power Low-Noise 2-D Distributed Feedback Laser Paik, S., Cho, S., Leedle, K., Kim, H., Park, B., G., Harris, J., S. 2013
Silicon germanium waveguide for stronger optical confinement in integrated silicon photonics Photonics Nanostruct. Fundam. Appl. Cho, S., Park, J., Kim, H., Sinclair, R., Park, B., G., Harris Jr., J., S. 2013
View details for DOI 10.1016/j.photonics.
Demonstration of a Ge/GeSn/Ge Quantum-Well Microdisk Resonator on Silicon: Enabling high-quality Ge (Sn) materials for micro and nanophotonics Nano Lett. Harris, J., S., Chen, R., Gupta, S., Huang, Y., C., Huo, Y., Rudy, C., W in press. 2013
Si/Ge/AlGaAs heterojunction high hole mobility transistor Cho, S., Kim, H., Park, B., G., Harris Jr., James, S. 2013
Low-Standby Power and High-Performance InAs/InGaAs/InP heterojunction Tunneling Field-Effect Transistor Harris, J., S., Cho, S., Woo, S., Yun, Kim, H., Seo, J. H., Lee, H., Gi 2013
Optical characterization of orientation-patterned GaP structures by micro reflectance difference spectroscopy J. Appl. Phys. Harris, J., S., Lastras-Martınez, L., F., Herrera-Jasso, R., Ulloa-Castillo, N., A., Balderas-Navarro, R., E., Lastras-Martınez, A. 2013; 114: 173504
Germanium Waveguide for On-Chip Optical Interconnect Harris, J., S., Cho, S., Kim, H., Paik, S., Kang, I. M., Lee, J., H. 2013
Design of AlGaAs/InGaAs Heterojunction Tunneling Field-Effect Transistor for Low-Standby-Power and High-Performance Application Harris, J., S., Yoon, Y., Jun, Cho, S., Seo, J., Hwa, Cho, E., S., Kang, S., W. 2013
Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application Appl. Phys. Lett. Cho, S., Kang, I. M., Kim, K., Rok, Park, B., G., Harris Jr., J., S. 2013; 22 (103): 222102-1 – 222102-4
Mixed-Mode Simulation of Nanowire Ge/GaAs Heterojunction Tunneling Field-Effect Transistor for Circuit Applications IEEE J. Electron Devices Soc. Cho, S., Kim, H., Sun, M., C., Kang, I. M., Park, B., G., Harris Jr., J., S. 2013; 2 (1): 48-53
MBE growth of tensile-strained Ge quantum wells and quantum dots Frontiers of Optoelectronics Huo, Y., Lin, H., Chen, R., Rong, Y., Kamins, T., I., Harris, J., S. 2013
(Invited) GeSn Channel n and p MOSFETs ECS Trans. Gupta, S., Chen, R., Vincent, B., Lin, D., Magyari-Kope, B., Caymax, M. 2013; 50: 937-941
In Vitro Optical Fiber Biosensor for Integrated Optical System Cho, S., Kallassi, P., El, Kim, H., Park, B., G., Harris Jr., J., S. 2013
Fabrication of GeSn-On-Insulator (GSOI) to enable monolithic 3D co-integration of logic and photonics Harris, J., S., Lin, J. J., Gupta, S., Huang, Y., C., Kim, Y., Jin, M. 2013
High-Efficiency Nanostructured Window GaAs Solar Cells Nano Letters Liang, D., Kang, Y., Huo, Y., Chen, Y., Cui, Y., Harris, J., S. 2013; 10 (13): 4850-4856
In-vivo Performance of Photovoltaic Subretinal Prosthesis OPHTHALMIC TECHNOLOGIES XXIII Mandel, Y., Goetz, G., Lavinsky, D., Huie, P., Mathieson, K., Wang, L., Kamins, T., Manivanh, R., Harris, J., Palanker, D. 2013; 8567
View details for DOI 10.1117/12.2001750

View details for Web of Science ID 000325430800005
Design optimization of an optically drivable heterogeneous MOSFET with silicon compatibility PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXI Cho, S., Kim, H., Yoo, S. J., Park, B., Harris, J. S. 2013; 8619
View details for DOI 10.1117/12.2005813

View details for Web of Science ID 000325433900042
Approaches for a Viable Germanium Laser: Tensile Strain, GeSn Alloys, and n-Type Doping 2013 IEEE OPTICAL INTERCONNECTS CONFERENCE Sukhdeo, D. S., Lin, H., Nam, D., Yuan, Z., Vulovic, B. M., Gupta, S., Harris, J. S., Dutt, B. (., Saraswat, K. C. 2013: 112-113
View details for Web of Science ID 000325206200055
Dilute phosphide nitride materials as photocathodes for electrochemical solar energy conversion PHYSICS, SIMULATION, AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES II Parameshwaran, V., Xu, X., Kang, Y., Harris, J., Wong, H. P., Clemens, B. 2013; 8620
View details for DOI 10.1117/12.2003486

View details for Web of Science ID 000322825200040
Cortical responses elicited by photovoltaic subretinal prostheses exhibit similarities to visually evoked potentials. Nature communications Mandel, Y., Goetz, G., Lavinsky, D., Huie, P., Mathieson, K., Wang, L., Kamins, T., Galambos, L., Manivanh, R., Harris, J., Palanker, D. 2013; 4: 1980-?
Abstract

We have previously developed a wireless photovoltaic retinal prosthesis, in which camera-captured images are projected onto the retina using pulsed near-IR light. Each pixel in the subretinal implant directly converts pulsed light into local electric current to stimulate the nearby inner retinal neurons. Here we report that implants having pixel sizes of 280, 140 and 70 μm implanted in the subretinal space in rats with normal and degenerate retina elicit robust cortical responses upon stimulation with pulsed near-IR light. Implant-induced eVEP has shorter latency than visible light-induced VEP, its amplitude increases with peak irradiance and pulse duration, and decreases with frequency in the range of 2-20 Hz, similar to the visible light response. Modular design of the arrays allows scalability to a large number of pixels, and combined with the ease of implantation, offers a promising approach to restoration of sight in patients blinded by retinal degenerative diseases.

View details for DOI 10.1038/ncomms2980

View details for PubMedID 23778557
Photon-enhanced thermionic emission from heterostructures with low interface recombination. Nature communications Schwede, J. W., Sarmiento, T., NARASIMHAN, V. K., Rosenthal, S. J., Riley, D. C., Schmitt, F., Bargatin, I., Sahasrabuddhe, K., Howe, R. T., Harris, J. S., Melosh, N. A., Shen, Z. 2013; 4: 1576-?
Abstract

Photon-enhanced thermionic emission is a method of solar-energy conversion that promises to combine photon and thermal processes into a single mechanism, overcoming fundamental limits on the efficiency of photovoltaic cells. Photon-enhanced thermionic emission relies on vacuum emission of photoexcited electrons that are in thermal equilibrium with a semiconductor lattice, avoiding challenging non-equilibrium requirements and exotic material properties. However, although previous work demonstrated the photon-enhanced thermionic emission effect, efficiency has until now remained very low. Here we describe electron-emission measurements on a GaAs/AlGaAs heterostructure that introduces an internal interface, decoupling the basic physics of photon-enhanced thermionic emission from the vacuum emission process. Quantum efficiencies are dramatically higher than in previous experiments because of low interface recombination and are projected to increase another order of magnitude with more stable, low work-function coatings. The results highlight the effectiveness of the photon-enhanced thermionic emission process and demonstrate that efficient photon-enhanced thermionic emission is achievable, a key step towards realistic photon-enhanced thermionic emission based energy conversion.

View details for DOI 10.1038/ncomms2577

View details for PubMedID 23481384
Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators OPTICS EXPRESS Edwards, E. H., Audet, R. M., Fei, E. T., Claussen, S. A., Schaevitz, R. K., Tasyurek, E., Rong, Y., Kamins, T. I., Harris, J. S., Miller, D. A. 2012; 20 (28): 29164-29173
Abstract

We demonstrate vertical-incidence electroabsorption modulators for free-space optical interconnects. The devices operate via the quantum-confined Stark effect in Ge/SiGe quantum wells grown on silicon substrates by reduced pressure chemical vapor deposition. The strong electroabsorption contrast enables use of a moderate-Q asymmetric Fabry-Perot resonant cavity, formed using a film transfer process, which allows for operation over a wide optical bandwidth without thermal tuning. Extinction ratios of 3.4 dB and 2.5 dB are obtained for 3 V and 1.5 V drive swings, respectively, with insertion loss less than 4.5 dB. For 60 ?m diameter devices, large signal modulation is demonstrated at 2 Gbps, and a 3 dB modulation bandwidth of 3.5 GHz is observed. These devices show promise for high-speed, low-energy operation given further miniaturization.

View details for Web of Science ID 000314914500005

View details for PubMedID 23388742
Continuous sensing of tumor-targeted molecular probes with a vertical cavity surface emitting laser-based biosensor JOURNAL OF BIOMEDICAL OPTICS Parashurama, N., O'Sullivan, T. D., de la Zerda, A., El Kalassi, P., Cho, S., Liu, H., Teed, R., Levy, H., Rosenberg, J., Cheng, Z., Levi, O., Harris, J. S., Gambhir, S. S. 2012; 17 (11)
Abstract

Molecular optical imaging is a widespread technique for interrogating molecular events in living subjects. However, current approaches preclude long-term, continuous measurements in awake, mobile subjects, a strategy crucial in several medical conditions. Consequently, we designed a novel, lightweight miniature biosensor for in vivo continuous optical sensing. The biosensor contains an enclosed vertical-cavity surface-emitting semiconductor laser and an adjacent pair of near-infrared optically filtered detectors. We employed two sensors (dual sensing) to simultaneously interrogate normal and diseased tumor sites. Having established the sensors are precise with phantom and in vivo studies, we performed dual, continuous sensing in tumor (human glioblastoma cells) bearing mice using the targeted molecular probe cRGD-Cy5.5, which targets ?V?3 cell surface integrins in both tumor neovasculature and tumor. The sensors capture the dynamic time-activity curve of the targeted molecular probe. The average tumor to background ratio after signal calibration for cRGD-Cy5.5 injection is approximately 2.43±0.95 at 1 h and 3.64±1.38 at 2 h (N=5 mice), consistent with data obtained with a cooled charge coupled device camera. We conclude that our novel, portable, precise biosensor can be used to evaluate both kinetics and steady state levels of molecular probes in various disease applications.

View details for DOI 10.1117/1.JBO.17.11.117004

View details for Web of Science ID 000314502700046

View details for PubMedID 23123976
Electrically Driven Photonic Crystal Nanocavity Devices IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Shambat, G., Ellis, B., Petykiewicz, J., Mayer, M. A., Majumdar, A., Sarmiento, T., Harris, J. S., Haller, E. E., Vuckovic, J. 2012; 18 (6): 1700-1710
View details for DOI 10.1109/JSTQE.2012.2193666

View details for Web of Science ID 000308664900011
Optical Absorption Enhancement in Freestanding GaAs Thin Film Nanopyramid Arrays ADVANCED ENERGY MATERIALS Liang, D., Huo, Y., Kang, Y., Wang, K. X., Gu, A., Tan, M., Yu, Z., Li, S., Jia, J., Bao, X., Wang, S., Yao, Y., Wong, H. P., Fan, S., Cui, Y., Harris, J. S. 2012; 2 (10): 1254-1260
View details for DOI 10.1002/aenm.201200022

View details for Web of Science ID 000309595900014
Selective area growth of germanium and germanium/silicon-germanium quantum wells in silicon waveguides for on-chip optical interconnect applications OPTICAL MATERIALS EXPRESS Claussen, S. A., Balram, K. C., Fei, E. T., Kamins, T. I., Harris, J. S., Miller, D. A. 2012; 2 (10): 1336-1342
View details for Web of Science ID 000309507000005
Process Considerations for 80-GHz High-Performance p-i-n Silicon Photodetector for Optical Interconnect JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Cho, S., Kim, H., Sun, M., Park, B., Harris, J. S. 2012; 12 (3): 370-376
View details for DOI 10.5573/JSTS.2012.12.3.370

View details for Web of Science ID 000313339100015
Antenna electrodes for controlling electroluminescence NATURE COMMUNICATIONS Huang, K. C., Seo, M., Huo, Y., Sarmiento, T., Harris, J. S., Brongersma, M. L. 2012; 3
Abstract

Optical antennas can control the emission from quantum emitters by modifying the local density of optical states via the Purcell effect. A variety of nanometallic antennas have been implemented to enhance and control key photoluminescence properties, such as the decay rate, directionality and polarization. However, their implementation in active devices has been hampered by the need to precisely place emitters near an antenna and to efficiently excite them electrically. Here we illustrate a design methodology for antenna electrodes that for the first time facilitates simultaneous operation as electrodes for current injection and as antennas capable of optically manipulating the electroluminescence. We show that by confining the electrically excited carriers to the vicinity of antenna electrodes and maximizing the optical coupling of the emission to a single, well-defined antenna mode, their electroluminescence can be effectively controlled. This work spurs the development of densely integrated, electrically driven light sources with tailored emission properties.

View details for DOI 10.1038/ncomms1985

View details for Web of Science ID 000308801100021

View details for PubMedID 22893129
Epitaxial growth of quasi-phase matched GaP for nonlinear applications: Systematic process improvements Tassev, V., Snure, M., Peterson, R., Bedford, R., Bliss, D., Bryant, G., Mann, M., Goodhue, W., Vangala, S., Termkoa, K., Lin, A., Harris, J. S., Fejer, M. M., Yapp, C., Tetlak, S. ELSEVIER SCIENCE BV. 2012: 72-77
View details for DOI 10.1016/j.jcrysgro.2011.12.077

View details for Web of Science ID 000306089300017
Photovoltaic retinal prosthesis: implant fabrication and performance JOURNAL OF NEURAL ENGINEERING Wang, L., Mathieson, K., Kamins, T. I., Loudin, J. D., Galambos, L., Goetz, G., Sher, A., Mandel, Y., Huie, P., Lavinsky, D., Harris, J. S., Palanker, D. V. 2012; 9 (4)
Abstract

The objective of this work is to develop and test a photovoltaic retinal prosthesis for restoring sight to patients blinded by degenerative retinal diseases. A silicon photodiode array for subretinal stimulation has been fabricated by a silicon-integrated-circuit/MEMS process. Each pixel in the two-dimensional array contains three series-connected photodiodes, which photovoltaically convert pulsed near-infrared light into bi-phasic current to stimulate nearby retinal neurons without wired power connections. The device thickness is chosen to be 30 µm to absorb a significant portion of light while still being thin enough for subretinal implantation. Active and return electrodes confine current near each pixel and are sputter coated with iridium oxide to enhance charge injection levels and provide a stable neural interface. Pixels are separated by 5 µm wide trenches to electrically isolate them and to allow nutrient diffusion through the device. Three sizes of pixels (280, 140 and 70 µm) with active electrodes of 80, 40 and 20 µm diameter were fabricated. The turn-on voltages of the one-diode, two-series-connected diode and three-series-connected diode structures are approximately 0.6, 1.2 and 1.8 V, respectively. The measured photo-responsivity per diode at 880 nm wavelength is ?0.36 A W(-1), at zero voltage bias and scales with the exposed silicon area. For all three pixel sizes, the reverse-bias dark current is sufficiently low (<100 pA) for our application. Pixels of all three sizes reliably elicit retinal responses at safe near-infrared light irradiances, with good acceptance of the photodiode array in the subretinal space. The fabricated device delivers efficient retinal stimulation at safe near-infrared light irradiances without any wired power connections, which greatly simplifies the implantation procedure. Presence of the return electrodes in each pixel helps to localize the current, and thereby improves resolution.

View details for DOI 10.1088/1741-2560/9/4/046014

View details for Web of Science ID 000306759600027

View details for PubMedID 22791690
Widely tunable midinfrared difference frequency generation in orientation-patterned GaAs pumped with a femtosecond Tm-fiber system OPTICS LETTERS Phillips, C. R., Jiang, J., Mohr, C., Lin, A. C., Langrock, C., Snure, M., Bliss, D., Zhu, M., Hartl, I., Harris, J. S., Fermann, M. E., Fejer, M. M. 2012; 37 (14): 2928-2930
Abstract

We demonstrate a midinfrared source tunable from 6.7 to 12.7 ?m via difference frequency generation (DFG) in orientation-patterned GaAs, with 1.3 mW average output power. The input pulses are generated via Raman self-frequency shift of a femtosecond Tm-doped-fiber laser system in a fluoride fiber. We numerically model the DFG process and show good agreement between simulations and experiments. We use this numerical model to show an improved design using longer pump pulses.

View details for Web of Science ID 000306709900053

View details for PubMedID 22825181
Room-temperature electroluminescence from germanium in an Al0.3Ga0.7As/Ge heterojunction light-emitting diode by Gamma-valley transport OPTICS EXPRESS Cho, S., Park, B., Yang, C., Cheung, S., Yoon, E., Kamins, T. I., Ben Yoo, S. J., Harris, J. S. 2012; 20 (14): 14921-14927
View details for Web of Science ID 000306176100028
Small-Signal Modeling of Gate-All-Around (GAA) Junctionless (JL) MOSFETs for Sub-millimeter Wave Applications JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Lee, J. S., Cho, S., Park, B., Harris, J. S., Kang, I. M. 2012; 12 (2): 230-239
View details for DOI 10.5573/JSTS.2012.12.2.230

View details for Web of Science ID 000306799300014
Structural and optical characterization of SixGe1-x-ySny alloys grown by molecular beam epitaxy APPLIED PHYSICS LETTERS Lin, H., Chen, R., Lu, W., Huo, Y., Kamins, T. I., Harris, J. S. 2012; 100 (14)
View details for DOI 10.1063/1.3701732

View details for Web of Science ID 000302567800026
Low-temperature growth of Ge1-xSnx thin films with strain control by molecular beam epitaxy THIN SOLID FILMS Lin, H., Chen, R., Huo, Y., Kamins, T. I., Harris, J. S. 2012; 520 (11): 3927-3930
View details for DOI 10.1016/j.tsf.2012.01.047

View details for Web of Science ID 000302838800012
Ge/SiGe Quantum Well Waveguide Modulator Monolithically Integrated With SOI Waveguides IEEE PHOTONICS TECHNOLOGY LETTERS Ren, S., Rong, Y., Claussen, S. A., Schaevitz, R. K., Kamins, T. I., Harris, J. S., Miller, D. A. 2012; 24 (6): 461-463
View details for DOI 10.1109/LPT.2011.2181496

View details for Web of Science ID 000300579600013
Investigation of the direct band gaps in Ge1-xSnx alloys with strain control by photoreflectance spectroscopy APPLIED PHYSICS LETTERS Lin, H., Chen, R., Lu, W., Huo, Y., Kamins, T. I., Harris, J. S. 2012; 100 (10)
View details for DOI 10.1063/1.3692735

View details for Web of Science ID 000301655500038
Simple Electroabsorption Calculator for Designing 1310 nm and 1550 nm Modulators Using Germanium Quantum Wells IEEE JOURNAL OF QUANTUM ELECTRONICS Schaevitz, R. K., Edwards, E. H., Roth, J. E., Fei, E. T., Rong, Y., Wahl, P., Kamins, T. I., Harris, J. S., Miller, D. A. 2012; 48 (2): 187-197
View details for DOI 10.1109/JQE.2011.2170961

View details for Web of Science ID 000299429100013
Photovoltaic Retinal Prosthesis with High Pixel Density. Nature photonics Mathieson, K., Loudin, J., Goetz, G., Huie, P., Wang, L., Kamins, T. I., Galambos, L., Smith, R., Harris, J. S., Sher, A., Palanker, D. 2012; 6 (6): 391-397
Abstract

Retinal degenerative diseases lead to blindness due to loss of the "image capturing" photoreceptors, while neurons in the "image processing" inner retinal layers are relatively well preserved. Electronic retinal prostheses seek to restore sight by electrically stimulating surviving neurons. Most implants are powered through inductive coils, requiring complex surgical methods to implant the coil-decoder-cable-array systems, which deliver energy to stimulating electrodes via intraocular cables. We present a photovoltaic subretinal prosthesis, in which silicon photodiodes in each pixel receive power and data directly through pulsed near-infrared illumination and electrically stimulate neurons. Stimulation was produced in normal and degenerate rat retinas, with pulse durations from 0.5 to 4 ms, and threshold peak irradiances from 0.2 to 10 mW/mm(2), two orders of magnitude below the ocular safety limit. Neural responses were elicited by illuminating a single 70 ?m bipolar pixel, demonstrating the possibility of a fully-integrated photovoltaic retinal prosthesis with high pixel density.

View details for PubMedID 23049619
Frequency Response of a Common-Source (CS) Amplifier Embedding Ge/GaAs Heterojunction-Based Tunneling Field-Effect Transistor (TFET) Harris, J., S., Hyungjin, S., Cho, Byung-Gook, James 2012
All-epitaxial Growth of Orientation-patterned Gallium Phosphide (OPGaP) Tech. Dig. OSA Lasers, Sources, and Related Photonic Devices, ITh5B.5-1-3 Schunemann, P., G., Mohnkern, L., Vera, A., Yang, X., S., Lin, A., C., Harris, J., S 2012
Simulation Study on Process Conditions for High-Speed Silicon Photodetector and Quantum-Well Structuring for Increased Number of Wavelength Discriminations Cho, S., Kim, H., Sun, M., C., Kamins, T., I., Park, B., G., Harris Jr., J., S. 2012
Design Consideration for Heterojunction P-Type Tunneling Field-Effect Transistor with Narrow-Bandgap Source Material Harris, J., S., Hyun, S., Cho, Byung-Gook, W., Kim, James 2012
Room Temperature Photoluminescence from Ge/SiGe Quantum Well Structure in Microdisk Resonator Harris, J., S., Chen, X., Huo, Y., Fei, E., Shambat, G., Liu, X. 2012
MBE growth of tensile-strained Ge quantum wells and quantum dots Front. Optoelectron. Chin. Online Huo, Y., Lin, H., Chen, R., Rong, Y., Kamins, T., I., Harris, J., S. 2012
View details for DOI 10.1007/s12200-012-0193-x
1550-nm Germanium Light-Emitting Diode by Momentum Conservation Transport Harris, J., S., Cho, S., Cheung, S., Yang, C., Kim, H., Yoon, E. 2012
Monte Carlo Simulations of the Influence of Localization Centres on Carrier Dynamics in GaInNAs Quantum Wells Acta Physica Polonica Harris, J., S., Baranowski, M., Kudrawiec, R., Latkowska, M., Syperek, M., Misiewicz, J. 2012; 6 (122): 1022-1025
Temperature dependence of Ge quantum well light emitting diode on Si substrate Harris, J., S., Fei, E., T., Yijie Huo, E., T., Chen, X., Miller, G., Zang, K. 2012
GaInNAs(Sb) Long-Wavelength VCSELs VCSELs, Fundamentals, Technology and Applications of Vertical-Cavity Surface-Emitting Lasers Harris, J., S., Bae, H. edited by Michalzik, R. Springer-Verlag Berlin Heidelberg. 2012: 1-25
Photovoltaic retinal prosthesis for restoring sight to the blind: implant design and fabrication MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY XVII Wang, L., Mathieson, K., Kamins, T. I., Loudin, J., Galambos, L., Harris, J. S., Palanker, D. 2012; 8248
View details for DOI 10.1117/12.909104

View details for Web of Science ID 000302640000004
Light Emission in Ge Quantum Wells 2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) Fei, E. T., Huo, Y., Shambat, G., Chen, X., Liu, X., Claussen, S. A., Edwards, E. H., Kamins, T. I., Miller, D. A., Vuckovic, J., Harris, J. S. 2012
View details for Web of Science ID 000310362401204
Photonic Crystal Nanocavity Lasers and Modulators 2012 IEEE PHOTONICS CONFERENCE (IPC) Vuckovic, J., Shambat, G., Petykiewicz, J., Ellis, B., Majumdar, A., Sarmiento, T., Mayer, M., Harris, J., Haller, E. 2012: 459-460
View details for Web of Science ID 000312865000229
A New Approach to Ge Lasers with Low Pump Power 2012 IEEE PHOTONICS CONFERENCE (IPC) Chen, X., Huo, Y., Fei, E. T., Shambat, G., Zang, K., Liu, X., Chen, Y., Kamins, T. I., Vuckovic, J., Harris, J. S. 2012: 60-61
View details for Web of Science ID 000312865000031
GaAs thin film nanostructure arrays for III-V solar cell applications Liang, D., Kang, Y., Huo, Y., Wang, K. X., Gu, A., Tan, M., Yu, Z., Lia, S., Jia, J., Bao, X., Wang, S., Yao, Y., Fan, S., Cui, Y., Harris, J. SPIE-INT SOC OPTICAL ENGINEERING. 2012
View details for DOI 10.1117/12.909743

View details for Web of Science ID 000302582400036
Selective-Area Growth of Ge and Ge/SiGe Quantum Wells in 3 mu m Silicon-on-Insulator Waveguides 2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) Claussen, S. A., Balram, K. C., Fei, E. T., Kamins, T. I., Harris, J. S., Miller, D. A. 2012
View details for Web of Science ID 000310362401207
Optical properties of Ge1-zSnz/SixGe1-x-ySny heterostructures 2012 IEEE PHOTONICS CONFERENCE (IPC) Lin, H., Chen, R., Lu, W., Huo, Y., Kamins, T. I., Harris, J. S. 2012: 919-920
View details for Web of Science ID 000312865000453
Ultra-Low Threshold and High Speed Electrically Driven Photonic Crystal Nanocavity Lasers and LEDs 2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) Vuckovic, J., Ellis, B., Shambat, G., Petykiewicz, J., Majumdar, A., Sarmiento, T., Mayer, M., Harris, J., Haller, E. 2012
View details for Web of Science ID 000310362401172
Ultrafast Direct Modulation of a Single-Mode Photonic Crystal Nanocavity Light-Emitting Diode 2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) Shambat, G., Ellis, B., Majumdar, A., Petykiewicz, J., Mayer, M., Sarmiento, T., Harris, J., Haller, E., Vuckovic, J. 2012
View details for Web of Science ID 000310362400095
Optical Fiber Tips Functionalized with Semiconductor Photonic Crystal Cavities 2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) Shambat, G., Provine, J., Rivoire, K., Sarmiento, T., Harris, J., Vuckovic, J. 2012
View details for Web of Science ID 000310362400287
Electrically driven photonic crystal nanocavity lasers, LEDs, and modulators NOVEL IN-PLANE SEMICONDUCTOR LASERS XI Shambat, G., Ellis, B., Mayer, M., Majumdar, A., Petykiewicz, J., Sarmiento, T., Harris, J., Haller, E. E., Vuckovic, J. 2012; 8277
View details for DOI 10.1117/12.907432

View details for Web of Science ID 000305332300003
Simulation study on scaling limit of silicon tunneling field-effect transistor under tunneling-predominance IEICE ELECTRONICS EXPRESS Cho, S., Kim, H., Sun, M., Kang, I. M., Park, B., Harris, J. S. 2012; 9 (9): 828-833
View details for DOI 10.1587/elex.9.828

View details for Web of Science ID 000305324600003
Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation APPLIED PHYSICS LETTERS Cho, S., Kang, I. M., Kamins, T. I., Park, B., Harris, J. S. 2011; 99 (24)
View details for DOI 10.1063/1.3670325

View details for Web of Science ID 000298254200065
Analyses on Small-Signal Parameters and Radio-Frequency Modeling of Gate-All-Around Tunneling Field-Effect Transistors IEEE TRANSACTIONS ON ELECTRON DEVICES Cho, S., Lee, J. S., Kim, K. R., Park, B., Harris, J. S., Kang, I. M. 2011; 58 (12): 4164-4171
View details for DOI 10.1109/TED.2011.2167335

View details for Web of Science ID 000297337000005
Molecular beam epitaxy grown GaNAsSb 1 eV photovoltaic cell JOURNAL OF CRYSTAL GROWTH Tan, K. H., Wicaksono, S., Loke, W. K., Li, D., Yoon, S. F., Fitzgerald, E. A., Ringel, S. A., Harris, J. S. 2011; 335 (1): 66-69
View details for DOI 10.1016/j.jcrysgro.2011.09.023

View details for Web of Science ID 000296993900013
Optical fiber tips functionalized with semiconductor photonic crystal cavities APPLIED PHYSICS LETTERS Shambat, G., Provine, J., Rivoire, K., Sarmiento, T., Harris, J., Vuckovic, J. 2011; 99 (19)
View details for DOI 10.1063/1.3660278

View details for Web of Science ID 000297030200002
Ultrafast direct modulation of a single-mode photonic crystal nanocavity light-emitting diode NATURE COMMUNICATIONS Shambat, G., Ellis, B., Majumdar, A., Petykiewicz, J., Mayer, M. A., Sarmiento, T., Harris, J., Haller, E. E., Vuckovic, J. 2011; 2
Abstract

Low-power and electrically controlled optical sources are vital for next generation optical interconnect systems to meet strict energy demands. Current optical transmitters consisting of high-threshold lasers plus external modulators consume far too much power to be competitive with future electrical interconnects. Here we demonstrate a directly modulated photonic crystal nanocavity light-emitting diode (LED) with 10?GHz modulation speed and less than 1?fJ per bit energy of operation, which is orders of magnitude lower than previous solutions. The device is electrically controlled and operates at room temperature, while the high modulation speed results from the fast relaxation of the quantum dots used as the active material. By virtue of possessing a small mode volume, our LED is intrinsically single mode and, therefore, useful for communicating information over a single narrowband channel. The demonstrated device is a major step forward in providing practical low-power and integrable sources for on-chip photonics.

View details for DOI 10.1038/ncomms1543

View details for Web of Science ID 000297686500026

View details for PubMedID 22086339
Increased photoluminescence of strain-reduced, high-Sn composition Ge1-xSnx alloys grown by molecular beam epitaxy APPLIED PHYSICS LETTERS Chen, R., Lin, H., Huo, Y., Hitzman, C., Kamins, T. I., Harris, J. S. 2011; 99 (18)
View details for DOI 10.1063/1.3658632

View details for Web of Science ID 000296659400025
Fabrication and Analysis of Epitaxially Grown Ge1-xSnx Microdisk Resonator With 20-nm Free-Spectral Range IEEE PHOTONICS TECHNOLOGY LETTERS Cho, S., Chen, R., Koo, S., Shambat, G., Lin, H., Park, N., Vuckovic, J., Kamins, T. I., Park, B., Harris, J. S. 2011; 23 (20)
View details for DOI 10.1109/LPT.2011.2163929

View details for Web of Science ID 000298952900025
Design Optimization of a Type-I Heterojunction Tunneling Field-Effect Transistor (I-HTFET) for High Performance Logic Technology JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Cho, S., Sun, M., Kim, G., Kamins, T. I., Park, B., Harris, J. S. 2011; 11 (3): 182-189
View details for DOI 10.5573/JSTS.2011.11.3.182

View details for Web of Science ID 000301290800006
Nanobeam photonic crystal cavity light-emitting diodes APPLIED PHYSICS LETTERS Shambat, G., Ellis, B., Petykiewicz, J., Mayer, M. A., Sarmiento, T., Harris, J., Haller, E. E., Vuckovic, J. 2011; 99 (7)
View details for DOI 10.1063/1.3625432

View details for Web of Science ID 000294208900005
Effects of Growth Temperatures on Crystal Quality of GaN by Vapor Phase Epitaxy Using GaCl3 and NH3 JAPANESE JOURNAL OF APPLIED PHYSICS Ueda, T., Yuri, M., Harris, J. S. 2011; 50 (8)
View details for DOI 10.1143/JJAP.50.085501

View details for Web of Science ID 000294336600053
Raman study of strained Ge1-xSnx alloys APPLIED PHYSICS LETTERS Lin, H., Chen, R., Huo, Y., Kamins, T. I., Harris, J. S. 2011; 98 (26)
View details for DOI 10.1063/1.3606384

View details for Web of Science ID 000292335700027
Optical Gain in GaInNAs and GaInNAsSb Quantum Wells IEEE JOURNAL OF QUANTUM ELECTRONICS Ferguson, J. W., Blood, P., Smowton, P. M., Bae, H., Sarmiento, T., Harris, J. S., Tansu, N., Mawst, L. J. 2011; 47 (6): 870-877
View details for DOI 10.1109/JQE.2011.2129492

View details for Web of Science ID 000290735400001
X-ray diffraction analysis of step-graded InxGa1-xAs buffer layers grown by molecular beam epitaxy Lin, H., Huo, Y., Rong, Y., Chen, R., Kamins, T. I., Harris, J. S. ELSEVIER SCIENCE BV. 2011: 17-20
View details for DOI 10.1016/j.jcrysgro.2010.11.173

View details for Web of Science ID 000292175000005
Two-dimensional III-V nucleation on Si for nonlinear optics JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Lin, A. C., Harris, J. S., Fejer, M. M. 2011; 29 (3)
View details for DOI 10.1116/1.3562191

View details for Web of Science ID 000291111300056
Ultralow-threshold electrically pumped quantum-dot photonic-crystal nanocavity laser NATURE PHOTONICS Ellis, B., Mayer, M. A., Shambat, G., Sarmiento, T., Harris, J., Haller, E. E., Vuckovic, J. 2011; 5 (5): 297-300
View details for DOI 10.1038/NPHOTON.2011.51

View details for Web of Science ID 000290014900020
Experimental demonstration of two methods for controlling the group delay in a system with photonic-crystal resonators coupled to a waveguide OPTICS LETTERS Huo, Y., Sandhu, S., Pan, J., Stuhrmann, N., Povinelli, M. L., Kahn, J. M., Harris, J. S., Fejer, M. M., Fan, S. 2011; 36 (8): 1482-1484
Abstract

We measure the group delay in an on-chip photonic-crystal device with two resonators side coupled to a waveguide. We demonstrate that such a group delay can be controlled by tuning either the propagation phase of the waveguide or the frequency of the resonators.

View details for Web of Science ID 000290034500059

View details for PubMedID 21499397
Selective epitaxial growth of Ge/Si0.15Ge0.85 quantum wells on Si substrate using reduced pressure chemical vapor deposition APPLIED PHYSICS LETTERS Ren, S., Rong, Y., Kamins, T. I., Harris, J. S., Miller, D. A. 2011; 98 (15)
View details for DOI 10.1063/1.3574912

View details for Web of Science ID 000289580800008
Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy APPLIED PHYSICS LETTERS Huo, Y., Lin, H., Chen, R., Makarova, M., Rong, Y., Li, M., Kamins, T. I., Vuckovic, J., Harris, J. S. 2011; 98 (1)
View details for DOI 10.1063/1.3534785

View details for Web of Science ID 000286009800012
Emerging applications for vertical cavity surface emitting lasers SEMICONDUCTOR SCIENCE AND TECHNOLOGY Harris, J. S., O'Sullivan, T., Sarmiento, T., Lee, M. M., Vo, S. 2011; 26 (1)
View details for DOI 10.1088/0268-1242/26/1/014010

View details for Web of Science ID 000285382000012
MBE growth of tensile-strained Ge quantum wells and quantum dots Front. Optoelectron. Huo, Y., Lin, H., Chen, R., Rong, Y., Kamins, T., I., Harris, J., S. 2011
View details for DOI 10.1007 /s12200-012-0193
Experimental demonstration of two methods for controlling the group delay in a system with photonic-crystal resonators coupled to a waveguide Opt. Lett. Harris, J., S., Huo, Y., Sandhu, S., Pan, J., Stuhrmann, N., Povinelli, M. 2011; 4 (36): 1482-1483
Small-Signal Modeling of Gate-All-Around (GAA) Junctionless MOSFETs for Sub-millimeter Wave Application Cho, S., Lee, J., Sung, Kang, I., Man, Park, B., G., Harris, J., S. 2011
Silicon-Compatible Bulk-Type Compound Junctionless Field-Effect Transistor Harris, J., S., Se, S., Cho, Byung-Gook, H., Park, James 2011
Direct-Bandgap Photoluminescence of MBE-grown Ge1-xSnx Alloys Chen, R., Huo, Y., Lin, H., Hitzman, C., J., Kamins, T., I., Harris, J., S. 2011
Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation Applied Phys. Lett. Cho, S., Kang, I. M., Kamins, T., I., Park, B., G., Harris Jr., J., S. 2011; 24 (99): 243505-1-4
Ge quantum well resonator modulators Schaevitz, R., K., Rong, Y., Claussen, S., A., Kamins, T., I., Vuckovic, J., Harris Jr., J., S. 2011
Fabrication and Characterization of Whispering Gallery Mode (WGM) Microdisk Resonator Based on Epitaxially Grown GeSn Harris, J., S., Cho, S., Chen, R., Lin, H., Huo, Y., Shambat, G. 2011
Design Optimization of Type-I Heterojunction Tunneling Field-Effect Transistor (I-HTFET) of Ge-AlxGa1-xAs System for High Performance Logic Technology Cho, S., Sun, M., C., Kim, G., Park, B., G., Harris, J., S. 2011
Surface Roughness Effect on Q-Factor of Ge Whispering Gallery Mode Microdisk Resonator Harris, J., S., Cho, S., Koo, S., Yoo, K., Pickett, E., R., Park, N. 2011
A novel nano-structured GaAs solar cell Harris, J., S., Liang, D., Gu, A., Huo, Y., Yan, J., Li, S. 2011
A Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides Kamins, T., I., Harris, J., S., B., D., A. 2011
Fast epitaxial growth of thick quasi-phase matched GaP for applications in the MIR and THz: determination of the optimal substrate and pattern orientation 2011 36TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) Tassev, V., Snure, M., Peterson, R., Bliss, D., Bryant, G., Goodhue, W., Vangala, S., Termkoa, K., Lin, A., Harris, J. S., Fejer, M. M., Yapp, C. 2011
View details for Web of Science ID 000330296300490
Simple Electroabsorption Calculator for Germanium Quantum Well Devices Audet, R., M., Rong, Y., Claussen, S., A., Tasyurek, E., Roth, J., E., Harris Jr., J., S. 2011
Optical gain in GaInNAs and GaInNAsSb quantum wells 2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) Ferguson, J. W., Blood, P., Smowton, P. M., Bae, H., Sarmiento, T., Harris, J. S., Tansu, N., Mawst, L. J. 2011
View details for Web of Science ID 000295612401010
Ultra-low Threshold Electrically Pumped Quantum Dot Photonic Crystal Nanocavity Laser 2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) Ellis, B., Mayer, M. A., Shambat, G., Sarmiento, T., Harris, J., Haller, E. E., Vuckovic, J. 2011
View details for Web of Science ID 000295612403207
GeSn Technology: Extending the Ge Electronics Roadmap 2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) Gupta, S., Chen, R., Magyari-Kope, B., Lin, H., Yang, B., Nainani, A., Nishi, Y., Harris, J. S., Saraswat, K. C. 2011
View details for Web of Science ID 000300015300100
Photovoltaic Retinal Prosthesis OPHTHALMIC TECHNOLOGIES XXI Loudin, J., Mathieson, K., Kamins, T., Wang, L., Galambos, L., Huie, P., Sher, A., Harris, J., Palanker, D. 2011; 7885
View details for DOI 10.1117/12.876560

View details for Web of Science ID 000297590500028
Integrated photonic structures for parallel fluorescence and refractive index biosensing PHOTONIC MICRODEVICES/MICROSTRUCTURES FOR SENSING III Lee, M. M., O'Sullivan, T. D., Cerruto, A., Liu, V., Zhang, J., Levi, O., Lee, H., Brueck, S. R., Fan, S., Harris, J. S. 2011; 8034
View details for DOI 10.1117/12.884228

View details for Web of Science ID 000294154700005
Rigorous Design of 22-nm Node 4-Terminal SOI FinFETs for Reliable Low Standby Power Operation with Semi-empirical Parameters JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Cho, S., O'uchi, S., Endo, K., Kim, S. W., Son, Y., Kang, I. M., Masahara, M., Harris, J. S., Park, B. 2010; 10 (4): 265-275
View details for Web of Science ID 000289445400003
Fully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes APPLIED PHYSICS LETTERS Seo, D., Jeon, S., Seo, S., Song, I., Kim, C., Park, S., Harris, J. S., Chung, U. 2010; 97 (17)
View details for DOI 10.1063/1.3490245

View details for Web of Science ID 000284233600027
Tuning the coherent interaction in an on-chip photonic-crystal waveguide-resonator system APPLIED PHYSICS LETTERS Pan, J., Huo, Y., Sandhu, S., Stuhrmann, N., Povinelli, M. L., Harris, J. S., Fejer, M. M., Fan, S. 2010; 97 (10)
View details for DOI 10.1063/1.3486686

View details for Web of Science ID 000282478800002
Implantable semiconductor biosensor for continuous in vivo sensing of far-red fluorescent molecules OPTICS EXPRESS O'Sullivan, T., Munro, E. A., Parashurama, N., Conca, C., Gambhir, S. S., Harris, J. S., Levi, O. 2010; 18 (12): 12513-12525
Abstract

We have fabricated miniature implantable fluorescence sensors for continuous fluorescence sensing applications in living subjects. These monolithically integrated GaAs-based sensors incorporate a 675 nm vertical-cavity surface-emitting laser (VCSEL), a GaAs PIN photodiode, and a fluorescence emission filter. We demonstrate high detection sensitivity for Cy5.5 far-red dye (50 nanoMolar) in living tissue, limited by the intrinsic background autofluorescence. These low cost, sensitive and scalable sensors are promising for long-term continuous monitoring of molecular dynamics for biomedical studies in freely moving animals.

View details for Web of Science ID 000278527700052

View details for PubMedID 20588377
Electrically pumped photonic crystal nanocavity light sources using a laterally doped p-i-n junction APPLIED PHYSICS LETTERS Ellis, B., Sarmiento, T., Mayer, M., Zhang, B., Harris, J., Haller, E., Vuckovic, J. 2010; 96 (18)
View details for DOI 10.1063/1.3425663

View details for Web of Science ID 000277422000003
Nanobeam photonic crystal cavity quantum dot laser OPTICS EXPRESS Gong, Y., Ellis, B., Shambat, G., Sarmiento, T., Harris, J. S., Vuckovic, J. 2010; 18 (9): 8781-8789
Abstract

The lasing behavior of one dimensional GaAs nanobeam cavities with embedded InAs quantum dots is studied at room temperature. Lasing is observed throughout the quantum dot PL spectrum, and the wavelength dependence of the threshold is calculated. We study the cavity lasers under both 780 nm and 980 nm pump, finding thresholds as low as 0.3 microW and 19 microW for the two pump wavelengths, respectively. Finally, the nanobeam cavity laser wavelengths are tuned by up to 7 nm by employing a fiber taper in near proximity to the cavities. The fiber taper is used both to efficiently pump the cavity and collect the cavity emission.

View details for Web of Science ID 000277082200006

View details for PubMedID 20588722
Characteristics of thick ZnSe films on quasi-phase-matched (QPM) GaAs substrates Singh, N. B., Kanner, G. S., Berghmans, A., Kahler, D., Lin, A., Wagner, B., Kelley, S. P., KNUTESON, D. J., HOLMSTROM, R., Schepler, K. L., Peterson, R., Fejer, M. M., Harris, J. S. ELSEVIER SCIENCE BV. 2010: 1142-1145
View details for DOI 10.1016/j.jcrysgro.2009.12.054

View details for Web of Science ID 000277039100021
Extracting systematic factors in a continuous-time credit migration model JOURNAL OF CREDIT RISK Thompson, H., Harris, J. 2010; 6 (1): 31-53
View details for Web of Science ID 000276777800003
Photoreflectance and photoluminescence study of GaInNAsSb layers lattice matched to InP JOURNAL OF APPLIED PHYSICS Kudrawiec, R., Sarmiento, T., Poloczek, P., Misiewicz, J., Harris, J. S. 2010; 107 (4)
View details for DOI 10.1063/1.3280030

View details for Web of Science ID 000275028900039
Experimental demonstration of an all-optical analogue to the superradiance effect in an on-chip photonic crystal resonator system PHYSICAL REVIEW B Pan, J., Sandhu, S., Huo, Y., Stuhrmann, N., Povinelli, M. L., Harris, J. S., Fejer, M. M., Fan, S. 2010; 81 (4)
View details for DOI 10.1103/PhysRevB.81.041101

View details for Web of Science ID 000274002500001
Simple electroabsorption model for germanium quantum well devices Harris, J., S., Schaevitz, R., K., Edwards, E., H., Audet, R., M., Rong, Y., Ren 2010
Simple electroabsorption model for silicongermanium/germanium quantum well devices Harris, J., S., Schaevitz, R., K., Roth, J., E., Edwards, E., H., Audet, R., M., Claussen 2010
Fabrication of Prototype Magnetic Coupled Spin-torque Devices for Non-volatile Logic Applications Leem, L., Harris, J., S., Rettner, C., Hughes, B., Jiang, X., Yang, S., H. 2010
Experimental demonstration of an all-optical analogue to the superradiance effect in an on-chip photonic crystal resonator system Phys. Rev. Pan, J., Sandhu, S., Huo, Y., Stuhrmann, N., Povinelli, M., Harris, J., S. 2010; 4 (B81): 041101-1-3
Multi-scale Simulations of Partially Unzipped CNT Hetero-junction Tunneling Field Effect Transistor 2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST Leem, L., Srivastava, A., Li, S., Magyari-Koepe, B., Iannaccone, G., Harris, J. S., Fiori, G. 2010
View details for Web of Science ID 000287997300189
Integration of Germanium Quantum Well Structures on a Silicon-on-Insulator Waveguide Platform for Optical Modulator Applications 2010 7TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) Ren, S., Rong, Y., Kamins, T. I., Harris, J. S., Miller, D. A. 2010: 60-62
View details for Web of Science ID 000300485500021
Si-Ge Surface-normal Asymmetric Fabry-Perot Quantum-confined Stark Effect Electroabsorption Modulator 2010 23RD ANNUAL MEETING OF THE IEEE PHOTONICS SOCIETY Edwards, E. H., Audet, R. M., Rong, Y., Claussen, S. A., Schaevitz, R. K., Tasyuerek, E., Ren, S., Kamins, T. I., Harris, J. S., Miller, D. A., Dosunmu, O. I., Uenlue, M. S. 2010: 514-515
View details for Web of Science ID 000287997500258
MBE growth of high Sn-percentage GeSn alloys with a composition-dependent absorption-edge shift 2010 7TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) Huo, Y., Chen, R., Lin, H., Kamins, T. I., Harris, J. S. 2010: 344-346
View details for Web of Science ID 000300485500116
Electrically Pumped Photonic Crystal Nanocavities Using a Laterally Doped p-i-n Junction 2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS) Ellis, B., Sarmiento, T., Mayer, M., Stone, P., Beeman, J., Zhang, B., Dubon, O., Haller, E., Yamamoto, Y., Harris, J., Vuckovic, J. 2010
View details for Web of Science ID 000290513601253
Fabrication of an integrated 670nm VCSEL-based sensor for miniaturized fluorescence sensing VERTICAL-CAVITY SURFACE-EMITTING LASERS XIV O'Sullivan, T. D., Munro, E., Harris, J. S., Levi, O. 2010; 7615
View details for DOI 10.1117/12.842096

View details for Web of Science ID 000283918300013
Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Rong, Y., Ge, Y., Huo, Y., Fiorentino, M., Tan, M. R., Kamins, T. I., Ochalski, T. J., Huyet, G., Harris, J. S. 2010; 16 (1): 85-92
View details for DOI 10.1109/JSTQE.2009.2031502

View details for Web of Science ID 000274382900010
FACETING AND DISORDER IN NANOWIRE SOLAR CELL ARRAYS Pickett, E., Gu, A., Huo, Y., Garnett, E., Hu, S., Sarmiento, T., Thombare, S., Liang, D., Li, S., Cui, Y., McGehee, M., McIntyre, P., Harris, J. IEEE. 2010: 1848-1853
View details for Web of Science ID 000287579502020
DESIGN AND GROWTH OF III-V NANOWIRE SOLAR CELL ARRAYS ON LOW COST SUBSTRATES Gu, A., Huo, Y., Hu, S., Sarmiento, T., Pickett, E., Liang, D., Li, S., Lin, A., Thombare, S., Yu, Z., Fan, S., McIntyre, P., Cui, Y., Harris, J. IEEE. 2010: 2034-2037
View details for Web of Science ID 000287579502062
Nonradiative recombination in 1.56 mu m GaInNAsSb/GaNAs quantum-well lasers APPLIED PHYSICS LETTERS Ferguson, J. W., Smowton, P. M., Blood, P., Bae, H., Sarmiento, T., Harris, J. S. 2009; 95 (23)
View details for DOI 10.1063/1.3271182

View details for Web of Science ID 000272627700004
Design and Analysis of CMOS-Controlled Tunable Photodetectors for Multiwavelength Discrimination JOURNAL OF LIGHTWAVE TECHNOLOGY Chen, R., Fu, J., Miller, D. A., Harris, J. S. 2009; 27 (23): 5451-5460
View details for DOI 10.1109/JLT.2009.2032248

View details for Web of Science ID 000270946600006
Optical probes of orientation-patterned ZnSe quasi-phase-matched devices OPTICAL ENGINEERING Kanner, G. S., Marable, M. L., Singh, N. B., Berghmans, A., Kahler, D., Wagner, B., Lin, A., Fejer, M. M., Harris, J. S., Schepler, K. L. 2009; 48 (11)
View details for DOI 10.1117/1.3257266

View details for Web of Science ID 000273210600011
GaAs-based 1.53 mu m GaInNAsSb vertical cavity surface emitting lasers ELECTRONICS LETTERS Sarmiento, T., Bae, H. P., O'Sullivan, T. D., Harris, J. S. 2009; 45 (19): 978-U28
View details for DOI 10.1049/el.2009.1626

View details for Web of Science ID 000270146100012
Electrically controlled modulation in a photonic crystal nanocavity OPTICS EXPRESS Englund, D., Ellis, B., Edwards, E., Sarmiento, T., Harris, J. S., Miller, D. A., Vuckovic, J. 2009; 17 (18): 15409-15419
Abstract

We describe a compact modulator based on a photonic crystal nanocavity whose resonance is electrically controlled through an integrated p-i-n junction. The sub-micron size of the nanocavity promises very low capacitance, high bandwidth, and efficient on-chip integration in optical interconnects.

View details for Web of Science ID 000269781700003

View details for PubMedID 19724539
Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells SEMICONDUCTOR SCIENCE AND TECHNOLOGY Mintairov, A. M., Sun, K., Merz, J. L., Yuen, H., Bank, S., Wistey, M., Harris, J. S., PEAKE, G., Egorov, A., Ustinov, V., Kudrawiec, R., Misiewicz, J. 2009; 24 (7)
View details for DOI 10.1088/0268-1242/24/7/075013

View details for Web of Science ID 000267402800014
Magnetic coupled spin-torque devices for nonvolatile logic applications Leem, L., Harris, J. S. AMER INST PHYSICS. 2009
View details for DOI 10.1063/1.3056141

View details for Web of Science ID 000266633500495
High-quality III-V semiconductor MBE growth on Ge/Si virtual substrates for metal-oxide-semiconductor device fabrication JOURNAL OF CRYSTAL GROWTH Choi, D., Harris, J. S., Kim, E., McIntyre, P. C., Cagnon, J., Stemmer, S. 2009; 311 (7): 1962-1971
View details for DOI 10.1016/j.jcrysgro.2008.09.138

View details for Web of Science ID 000265659300083
QUaD: A HIGH-RESOLUTION COSMIC MICROWAVE BACKGROUND POLARIMETER ASTROPHYSICAL JOURNAL Hinderks, J. R., Ade, P., Bock, J., Bowden, M., Brown, M. L., Cahill, G., Carlstrom, J. E., Castro, P. G., Church, S., Culverhouse, T., Friedman, R., Ganga, K., Gear, W. K., Gupta, S., Harris, J., Haynes, V., Keating, G., Kovac, J., Kirby, E., Lange, A. E., Leitch, E., Mallie, O. E., Melhuish, S., Memari, Y., Murphy, A., Orlando, A., Schwarz, R., Sullivan, C. O., Piccirillo, L., Pryke, C., Rajguru, N., Rusholme, B., Taylor, A. N., Thompson, K. L., Tucker, C., Turner, A. H., Wu, E. Y., Zemcov, M. 2009; 692 (2): 1221-1246
View details for DOI 10.1088/0004-637X/692/2/1221

View details for Web of Science ID 000263674700019
Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1.5-1.65 mu m: Broadening of the fundamental transition APPLIED PHYSICS LETTERS Kudrawiec, R., Poloczek, P., Misiewicz, J., Bae, H. P., Sarmiento, T., Bank, S. R., Yuen, H. B., Wistey, M. A., Harris, J. S. 2009; 94 (3)
View details for DOI 10.1063/1.3073718

View details for Web of Science ID 000262724000010
Implantable optical biosensor for in vivo molecular imaging OPTICAL FIBERS AND SENSORS FOR MEDICAL DIAGNOSTICS AND TREATMENT APPLICATIONS IX O'Sullivan, T. D., Munro, E., de la Zerda, A., Parashurama, N., Teed, R., Walls, Z., Levi, O., Gambhir, S. S., Harris, J. S. 2009; 7173
View details for DOI 10.1117/12.811227

View details for Web of Science ID 000284821100007
High quality III-V materials growth on Si (100) substrate via Ge buffer J. Crystal Growth Choi, D., Cagnon, J., Kim, E., Stemmer, S., McIntyre, P., C., Harris, J., S. 2009: 1962-71
Origin of non radiative recombination in GaInNAsSb/GaNAs quantum well lasers Ferguson, J., Smowton, P., Blood, P., Bae, H., P., Sarmiento, T., Harris, J., S. 2009
A Implantable optical biosensor for in vivo molecular imaging Harris, J., S., O'Sullivan, T., D., Munro, E., Zerda, A., de la, Parashurama, N., Teed, R. 2009
High Efficiency Solar Cells based on Spontaneous Emission Inhibition in Photonic Crystals 2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 Ellis, B., Sarmiento, T., Harris, J., Vuckovic, J. 2009: 2659-2660
View details for Web of Science ID 000274751302314
Fermi Level Depinning For the Design of III-V FET Source/Drain Contacts PROCEEDINGS OF TECHNICAL PROGRAM: 2009 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS Hu, J., Guan, X., Choi, D., Harris, J. S., Saraswat, K., Wong, H. P. 2009: 123-124
View details for Web of Science ID 000272451000055
1528 nm GaInNAsSb/GaAs Vertical Cavity Surface Emitting Lasers 2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 Sarmiento, T., Bae, H., O'Sullivan, T. D., Harris, J. S. 2009: 1629-1630
View details for Web of Science ID 000274751301138
Direct Band Gap Tensile-Strained Germanium 2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 Huo, Y., Lin, H., Rong, Y., Makarova, M., Kamins, T. I., Vuckovic, J., Harris, J. S. 2009: 824-825
View details for Web of Science ID 000274751300415
Near-infrared in vivo fluorescence sensor with integrated dielectric emission filter 2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 O'Sullivan, T. D., Munro, E., Conca, C., Parashurama, N., de la Zerda, A., Gambhir, S. S., Harris, J. S., Levi, O. 2009: 3085-3086
View details for Web of Science ID 000274751302528
Towards responsible use of cognitive-enhancing drugs by the healthy NATURE Greely, H., Sahakian, B., Harris, J., Kessler, R. C., Gazzaniga, M., Campbell, P., Farah, M. J. 2008; 456 (7223): 702-705
View details for DOI 10.1038/456702a

View details for Web of Science ID 000261559900020

View details for PubMedID 19060880
Optical Properties of Dilute Nitride InN(As)Sb Quantum Wells and Quantum Dots Grown by Molecular Beam Epitaxy JOURNAL OF ELECTRONIC MATERIALS Kim, S. M., Yuen, H. B., Hatami, F., Chin, A., Harris, J. S. 2008; 37 (12): 1774-1779
View details for DOI 10.1007/s11664-008-0472-x

View details for Web of Science ID 000260377400005
Growth of mm-thick orientation-patterned GaAs for IR and THZ generation JOURNAL OF CRYSTAL GROWTH Lynch, C., Bliss, D. F., Zens, T., Lin, A., Harris, J. S., Kuo, P. S., Fejer, M. M. 2008; 310 (24): 5241-5247
View details for DOI 10.1016/j.jcrysgro.2008.08.050

View details for Web of Science ID 000262193900002
Analysis of Active Hybrid Fiber-Semiconductor Devices for Optical Networks IEEE JOURNAL OF QUANTUM ELECTRONICS Khalili, A., Lim, X. H., Bae, H., Harris, J. S. 2008; 44 (11-12): 1042-1054
View details for DOI 10.1109/JQE.2008.2001304

View details for Web of Science ID 000261544400008
A review of progress on nano-aperture VCSEL CHINESE OPTICS LETTERS Rao, Z., Vo, S., Harris, J. S. 2008; 6 (10): 748-754
View details for DOI 10.3788/COL20080610.0748

View details for Web of Science ID 000260619300012
Low surface roughness and threading dislocation density Ge growth on Si (001) JOURNAL OF CRYSTAL GROWTH Choi, D., Ge, Y., Harris, J. S., Cagnon, J., Stemmer, S. 2008; 310 (18): 4273-4279
View details for DOI 10.1016/j.jcrysgro.2008.07.029

View details for Web of Science ID 000259791100042
Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators APPLIED PHYSICS LETTERS Shin, B., Choi, D., Harris, J. S., Mclntyre, P. C. 2008; 93 (5)
View details for DOI 10.1063/1.2966357

View details for Web of Science ID 000258335900058
On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%-32% JOURNAL OF APPLIED PHYSICS Kudrawiec, R., Yuen, H. B., Bank, S. R., Bae, H. P., Wistey, M. A., Harris, J. S., Motyka, M., Misiewicz, J. 2008; 104 (3)
View details for DOI 10.1063/1.2961330

View details for Web of Science ID 000258493900052
Formation of an oxide-free Ge/TiO2 interface by atomic layer deposition on brominated Ge APPLIED PHYSICS LETTERS Ardalan, P., Pickett, E. R., Harris, J. S., Marshall, A. F., Bent, S. F. 2008; 92 (25)
View details for DOI 10.1063/1.2951608

View details for Web of Science ID 000257231200043
Molecular-beam epitaxial growth of III-V semiconductors on Ge/Si for metal-oxide-semiconductor device fabrication APPLIED PHYSICS LETTERS Choi, D., Kim, E., McIntyre, P. C., Harris, J. S. 2008; 92 (20)
View details for DOI 10.1063/1.2929386

View details for Web of Science ID 000256196600093
Aligning microcavity resonances in silicon photonic-crystal slabs using laser-pumped thermal tuning APPLIED PHYSICS LETTERS Pan, J., Huo, Y., Yamanaka, K., Sandhu, S., Scaccabarozzi, L., Timp, R., Povinelli, M. L., Fan, S., Fejer, M. M., Harris, J. S. 2008; 92 (10)
View details for DOI 10.1063/1.2896615

View details for Web of Science ID 000253989300114
Terahertz sources based on intracavity parametric down-conversion in quasi-phase-matched gallium arsenide IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Schaar, J. E., Vodopyanov, K. L., Kuo, P. S., Fejer, M. M., Yu, X., Lin, A., Harris, J. S., Bliss, D., Lynch, C., Kozlov, V. G., Hurlbut, W. 2008; 14 (2): 354-362
View details for DOI 10.1109/JSTQE.2008.917957

View details for Web of Science ID 000258763400012
The quasi-optical design of the QUaD telescope INFRARED PHYSICS & TECHNOLOGY O'Sullivan, C., Cahill, G., Murphy, J. A., Gear, W. K., Harris, J., Ade, P. A., Church, S. E., Thompson, K. L., Pryke, C., Bock, J., Bowden, M., Brown, M. L., Carlstrom, J. E., Castro, P. G., Culverhouse, T., Friedman, R. B., Ganga, K. M., Haynes, V., Hinderks, J. R., Kovak, J., Lange, A. E., Leitch, E. M., Mallie, O. E., Melhuish, S. J., Orlando, A., Piccirillo, L., Pisano, G., Rajguru, N., Rusholme, B. A., Schwarz, R., Taylor, A. N., Wu, E. Y., Zemcov, M. 2008; 51 (4): 277-286
View details for DOI 10.1016/j.infrared.2007.10.001

View details for Web of Science ID 000254984100001
C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing ELECTRONICS LETTERS Roth, J. E., Fidaner, O., Edwards, E. H., Schaevitz, R. K., Kuo, Y., Helman, N. C., Kamins, T. I., Harris, J. S., Miller, D. A. 2008; 44 (1): 49-U63
View details for Web of Science ID 000252959400032
Tunable narrow-bandwidth source of THz radiation based on frequency down-conversion in periodically structured gallium arsenide TERAHERTZ TECHNOLOGY AND APPLICATIONS Schaar, J. E., Vodopyanov, K. L., Kuo, P. S., Fejer, M. M., Lin, A., Yu, X., Harris, J. S., Bliss, D., Lynch, C., Kozlov, V. G., Hurlbut, W. 2008; 6893
View details for DOI 10.1117/12.763631

View details for Web of Science ID 000254732000004
Electronmodulation Spectroscopy of GaInNAsSb/GaAs Quantum Wells: The Conduction Band Offset and Effective Mass Issues Dilute III-V Nitride Semiconductors and Materials Systems Misiewicz, J., Kudrawiec, R., Gladysiewicz, M., Harris, J., S. edited by Erol, A. Springer Series in Materials Science Springer-Verlag, Berlin, Germany. 2008
The Fermi level position in as-grown GaInNAS(Sb) quantum wells and layers studied by contactless electroreflectance PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 2 2008 Kudrawiec, R., Yuen, H. B., Bank, S. R., Bae, H. P., Wistey, M. A., Harris, J. S., Motyka, M., Gladysiewicz, M., Misiewicz, J. 2008; 5 (2): 473-477
View details for DOI 10.1002/pssc.200777468

View details for Web of Science ID 000254423800011
Low-frequency noise characterization of near-IR VCSELs for functional brain imaging PHOTONIC THERAPEUTICS AND DIAGNOSTICS IV Lee, T. T., Lim, P. G., Harris, J. S., Shenoy, K. V., Smith, S. J. 2008; 6842
View details for DOI 10.1117/12.764143

View details for Web of Science ID 000255314100050
GaInNAsSb/GaAs vertical cavity surface-emitting lasers (VCSELs): current challenges and techniques to realize multiple-wavelength laser arrays at 1.55 mu m VERTICAL-CAVITY SURFACE-EMITTING LASERS XII Gobe, M., Bae, H. P., Sarmiento, T., Harris, J. S. 2008; 6908
View details for DOI 10.1117/12.762311

View details for Web of Science ID 000254737900019
Magnetic Coupled Spin-torque Devices and Magnetic Ring Oscillator IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST Leem, L., Harris, J. S. 2008: 159-162
View details for Web of Science ID 000265829300035
Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells JOURNAL OF APPLIED PHYSICS Kudrawiec, R., Yuen, H. B., Bank, S. R., Bae, H. P., Wistey, M. A., Harris, J. S., Motyka, M., Misiewicz, J. 2007; 102 (11)
View details for DOI 10.1063/1.2817258

View details for Web of Science ID 000251678800024
Effects of different plasma species (atomic N, metastable N-2(*), and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy APPLIED PHYSICS LETTERS Oye, M. M., Mattord, T. J., Hallock, G. A., Bank, S. R., Wistey, M. A., Reifsnider, J. M., Ptak, A. J., Yuen, H. B., Harris, J. S., Holmes, A. L. 2007; 91 (19)
View details for DOI 10.1063/1.2806226

View details for Web of Science ID 000250810300029
GaAs optical parametric oscillator with circularly polarized and depolarized pump OPTICS LETTERS Kuo, P. S., Vodopyanov, K. L., Fejer, M. M., Yu, X., Harris, J. S., Bliss, D. F., Weyburne, D. 2007; 32 (18): 2735-2737
Abstract

We demonstrate an optical parametric oscillator (OPO) based on GaAs pumped with linearly polarized and circularly polarized light and show that the relative OPO thresholds agree with theoretical expectations. For the circularly polarized pump, the threshold was as low as for the [111]-linearly polarized pump case. The pump was also passed through a Lyot depolarizer to produce pseudo-depolarized light, and the OPO threshold in this case was only 22% higher than that for [001]-linearly polarized pump.

View details for Web of Science ID 000250151900035

View details for PubMedID 17873952
Recent progress on 1.55-mu m dilute-nitride lasers IEEE JOURNAL OF QUANTUM ELECTRONICS Bank, S. R., Bae, H., Goddard, L. L., Yuen, H. B., Wistey, M. A., Kudrawiec, R., Harris, J. S. 2007; 43 (9-10): 773-785
View details for DOI 10.1109/JQE.2007.902301

View details for Web of Science ID 000250097200005
Ge-SiGe quantum-well waveguide photodetectors on silicon for the near-infrared IEEE PHOTONICS TECHNOLOGY LETTERS Fidaner, O., Okyay, A. K., Roth, J. E., Schaevitz, R. K., Kuo, Y., Saraswat, K. C., Harris, J. S., Miller, D. A. 2007; 19 (17-20): 1631-1633
View details for DOI 10.1109/LPT.2007.904929

View details for Web of Science ID 000250212600114
High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric APPLIED PHYSICS LETTERS Goel, N., Majhi, P., Tsai, W., Warusawithana, M., Schlom, D. G., Santos, M. B., Harris, J. S., Nishi, Y. 2007; 91 (9)
View details for DOI 10.1063/1.2776846

View details for Web of Science ID 000249156100134
High transmission through ridge nano-apertures on vertical-cavity surface-emitting lasers OPTICS EXPRESS Rao, Z., Hesselink, L., Harris, J. S. 2007; 15 (16): 10427-10438
Abstract

We report high-intensity nano-aperture Vertical-Cavity Surface- Emitting Lasers (VCSELs) with sub-100nm near-field spots using ridge apertures. Power transmission efficiency through different ridge apertures, including bowtie, C, H and I-shaped apertures on VCSELs were studied. Significantly higher transmission efficiencies were obtained from the ridge apertures than those from conventional square apertures. Mechanisms for high transmission through the ridge apertures are explained through simulation and waveguide theory. A new quadruple-ridge aperture is proposed and designed via simulation. With the high-intensity and small spot size, VCSELs using these ridge nano-apertures are very promising means to realize applications such as ultrahigh-density near-field optical data storage and ultrahigh-resolution near-field imaging etc.

View details for Web of Science ID 000248753100057

View details for PubMedID 19547395
Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Harris, J. S., Kudrawiec, R., Yuen, H. B., Bank, S. R., Bae, H. P., Wistey, M. A., Jackrel, D., Pickett, E. R., Sarmiento, T., Goddard, L. L., Lordi, V., Gugov, T. 2007; 244 (8): 2707-2729
View details for DOI 10.1002/pssb.200675620

View details for Web of Science ID 000248712800006
Evanescent-coupled GaInNAsSb in-line fibre photodetectors IET OPTOELECTRONICS Yang, H., Khalili, A., Wistey, M., Harris, J. S. 2007; 1 (4): 175-177
View details for DOI 10.1049/iet-opt:20060065

View details for Web of Science ID 000249040100006
High-intensity bowtie-shaped nano-aperture vertical-cavity surface-emitting laser for near-field optics OPTICS LETTERS Rao, Z., Hesselink, L., Harris, J. S. 2007; 32 (14): 1995-1997
Abstract

We report a high-intensity nano-aperture vertical-cavity surface-emitting laser (VCSEL) utilizing a bowtie-shaped aperture. A maximum power of 188 microW is achieved from a 180 nm bowtie aperture at a wavelength of 970 nm. The near-field full width at half-maximum intensity spot size 20 nm away from the bowtie aperture is 64 nm x 66 nm from simulation, and the peak near-field intensity is estimated to be as high as 47 mW/microm(2). This intensity is high enough to realize near-field optical recording, and the small spot size corresponds to storage densities up to 150 Gbits/in(2). The bowtie-aperture VCSEL also enables other applications, such as compact high-intensity probes for ultrahigh-resolution near-field imaging and single molecule fluorescence and spectroscopy.

View details for Web of Science ID 000248669200013

View details for PubMedID 17632621
Annealing condition optimization and electrical characterization of amorphous LaAlO3/GaAs metal-oxide-semiconductor capacitors APPLIED PHYSICS LETTERS Choi, D., Harris, J. S., Warusawithana, M., Schlom, D. G. 2007; 90 (24)
View details for DOI 10.1063/1.2748308

View details for Web of Science ID 000247305400102
Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers APPLIED PHYSICS LETTERS Bae, H. P., Bank, S. R., Yuen, H. B., Sarmiento, T., Pickett, E. R., Wistey, M. A., Harris, J. S. 2007; 90 (23)
View details for DOI 10.1063/1.2746944

View details for Web of Science ID 000247145500019
Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy JOURNAL OF APPLIED PHYSICS Jackrel, D. B., Bank, S. R., Yuen, H. B., Wistey, M. A., Harris, J. S. 2007; 101 (11)
View details for DOI 10.1063/1.2744490

View details for Web of Science ID 000247306000174
High-intensity C-shaped nanoaperture vertical-cavity surface-emitting laser with controlled polarization APPLIED PHYSICS LETTERS Rao, Z., Matteo, J. A., Hesselink, L., Harris, J. S. 2007; 90 (19)
View details for DOI 10.1063/1.2737938

View details for Web of Science ID 000246413400010
Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (similar to 80 nm) Si1-xGex step-graded buffer layers for high-kappa III-V metal-oxide-semiconductor field effect transistor applications Oye, M. M., Shahrjerdi, D., Ok, I., Hurst, J. B., Lewis, S. D., Dey, S., Kelly, D. Q., Joshi, S., Mattord, T. J., Yu, X., Wistey, M. A., Harris, J. S., Holmes, A. L., Lee, J. C., Banerjee, S. K. A V S AMER INST PHYSICS. 2007: 1098-1102
View details for DOI 10.1116/1.2713119

View details for Web of Science ID 000247551300083
Optical modulator on silicon employing germanium quantum wells OPTICS EXPRESS Roth, J. E., Fidaner, O., Schaevitz, R. K., Kuo, Y., Kamins, T. I., Harris, J. S., Miller, D. A. 2007; 15 (9): 5851-5859
Abstract

We demonstrate an electroabsorption modulator on a silicon substrate based on the quantum confined Stark effect in strained germanium quantum wells with silicon-germanium barriers. The peak contrast ratio is 7.3 dB at 1457 nm for a 10 V swing, and exceeds 3 dB from 1441 nm to 1461 nm. The novel side-entry structure employs an asymmetric Fabry-Perot resonator at oblique incidence. Unlike waveguide modulators, the design is insensitive to positional misalignment, maintaining > 3 dB contrast while translating the incident beam 87 mum and 460 mum in orthogonal directions. Since the optical ports are on the substrate edges, the wafer top and bottom are left free for electrical interconnections and thermal management.

View details for Web of Science ID 000246395000064

View details for PubMedID 19532843
Integrated semiconductor optical sensors for cellular and neural imaging APPLIED OPTICS Levi, O., Lee, T. T., Lee, M. M., Smith, S. J., Harris, J. S. 2007; 46 (10): 1881-1889
Abstract

We review integrated optical sensors for functional brain imaging, localized index-of-refraction sensing as part of a lab-on-a-chip, and in vivo continuous monitoring of tumor and cancer stem cells. We present semiconductor-based sensors and imaging systems for these applications. Measured intrinsic optical signals and tissue optics simulations indicate the need for high dynamic range and low dark-current neural sensors. Simulated and measured reflectance spectra from our guided resonance filter demonstrate the capability for index-of-refraction sensing on cellular scales, compatible with integrated biosensors. Finally, we characterized a thermally evaporated emission filter that can be used to improve sensitivity for in vivo fluorescence sensing.

View details for Web of Science ID 000245290300035

View details for PubMedID 17356634
Growth of GaAs with orientation-patterned structures for nonlinear optics Yu, X., Scaccabarozzi, L., Lin, A. C., Fejer, M. M., Harris, J. S. ELSEVIER SCIENCE BV. 2007: 163-167
View details for DOI 10.1016/j.jcrysgro.2006.11.315

View details for Web of Science ID 000246015800038
Conduction band offset for Ga0.62In0.38NxAs0.991-xSb0.009/GaNyAs1-y/GaAs systems with the ground state transition at 1.5-1.65 mu m APPLIED PHYSICS LETTERS Kudrawiec, R., Bank, S. R., Yuen, H. B., Bae, H., Wistey, M. A., Goddard, L. L., Harris, J. S. 2007; 90 (13)
View details for DOI 10.1063/1.2716366

View details for Web of Science ID 000245317100026
Fermi level shift in GaInNAsSb/GaAs quantum wells upon annealing studied by contactless electroreflectance APPLIED PHYSICS LETTERS Kudrawiec, R., Yuen, H. B., Bank, S. R., Bae, H. P., Wistey, M. A., Harris, J. S., Motyka, M., Misiewicz, J. 2007; 90 (6)
View details for DOI 10.1063/1.2437729

View details for Web of Science ID 000244162300019
Electromodulation spectroscopy of interband transitions in GaInNAsSb/GaAs quantum wells with high indium content Kudrawiec, R., Yuen, H. B., Bank, S. R., Bae, H. P., Wistey, M. A., Harris, J. S., Motyka, M., Gladysiewicz, M., Misiewicz, J. WILEY-V C H VERLAG GMBH. 2007: 364-372
View details for DOI 10.1002/pssa.200673954

View details for Web of Science ID 000244509300007
The influence of antimony on the optical quality of highly strained GaInNAs/GaAs QWs investigated by contacless electroreflectance Kudrawiec, R., Yuen, H. B., Bank, S. R., Bae, H. P., Wistey, M. A., Harris, J. S., Motyka, M., Gladysiewicz, M., Misiewicz, J. WILEY-V C H VERLAG GMBH. 2007: 543-546
View details for DOI 10.1002/pssa.200673291

View details for Web of Science ID 000244509300033
Sensitivity analysis of a photonic crystal structure for index-of-refraction sensing NANOSCALE IMAGING, SPECTROSCOPY, SENSING, AND ACTUATION FOR BIOMEDICAL APPLICATIONS IV Levi, O., Lee, M. M., Zhang, J., Lousse, V., Brueck, S. R., Fan, S., Harris, J. S. 2007; 6447
View details for DOI 10.1117/12.705670

View details for Web of Science ID 000245976200016
The Electrical Characterization of Molecular-Beam-Deposited LaAlO3 on GaAs and its Annealing Effects Harris, J., S., Choi, D., Warusawithana, M., Chui, C., O., Chen, J., Tsai, W. 2007
GaIn) (NAsSb): MBE growth, heterostructure and nanophotonic devices International J. Nanoscience Harris, J., S. 2007; 3-4 (6): 269-274
Terahertz wave generation in orientation-patterned GaAs using resonantly enhanced scheme Vodopyanov, K., L., Schaar, J., K., Kuo, P., S., Fejer, M., M., Yu, X., Harris, J., S. 2007
Optical Analogue to Electromagnetically Induced Transparency in Photonic Crystals, Simulation and Experiments Technical Digest OSA 2007 Slow and Fast Light, SWB2 Harris, J., S., Pan, J., Sandhu, S., Huo, Y., Povinelli, M., L., Fejer, M., M. 2007
A highly stable evanescently-coupled hybrid fibre semiconductor laser design Khalili, A., Lim, X., H., Bae, H., Harris, J., S. 2007
Compact Semiconductor Bioluminescence Bio-sensors Technical Digest Frontiers in Optics, (Optical Society of America), paper JMD5 O'Sullivan, T., Wechselberger, A., Levi, O., Harris, J. 2007
Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications Frontiers in Molecular-Beam Epitaxy toward Noverl Devices Harris, J., S., Kudrawiec, R., Yuen, H., B., Bank, S., R., Bae, H., P., Wistey, M., A. edited by Grahn, H., Koch, R., Trampert, A. Wiley VCH, Berlin, Germany. 2007
The quantum confined Stark effect in Ge/SiGe quantum wells: An efficient electroabsorption mechanism for silicon-based applications 2007 4TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS Roth, J. E., Fidaner, O., Schaevitz, R. K., Edwards, E. H., Kuo, Y., Kamins, T. I., Harris, J. S., Miller, D. A. 2007: 178-180
View details for Web of Science ID 000253465500060
Contactless electroreflectance of GaInNAsSb/GaAs single quantum wells with indium content of 8%-32% JOURNAL OF APPLIED PHYSICS Kudrawiec, R., Yuen, H. B., Motyka, M., Gladysiewicz, M., Misiewicz, J., Bank, S. R., Bae, H. P., Wistey, M. A., Harris, J. S. 2007; 101 (1)
View details for DOI 10.1063/1.2382721

View details for Web of Science ID 000243585200024
Thermally induced relaxation in GaInNAsSb quantum well structures SEMICONDUCTOR DEFECT ENGINEERING-MATERIALS, SYNTHETIC STRUCTURES AND DEVICES II Pickett, E., Bank, S., Yuen, H., Bae, H., Sarmiento, T., Marshall, A., Harris, J. 2007; 994: 105-110
View details for Web of Science ID 000250474700014
New THz sources for bio-medical imaging NOVEL IN - PLANE SEMICONDUCTOR LASERS IV Harris, J. S., Gu, A., Kim, S. M. 2007; 6485
View details for DOI 10.1117/12.714266

View details for Web of Science ID 000246393700022
(GaIn)(NAsSb): MBE growth, heterostructure and nanophotonic devices INTERNATIONAL JOURNAL OF NANOSCIENCE, VOL 6, NOS 3 AND 4 Harris, J. S. 2007; 6 (3-4): 269-274
View details for Web of Science ID 000255632300020
Optical link on silicon employing Ge/SiGe quantum well structures 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 Fidaner, O., Okyay, A. K., Roth, J. E., Scheavitz, R. K., Kuo, Y., Saraswat, K. C., Harris, J. S., Miller, D. A. 2007: 852-853
View details for Web of Science ID 000259345200427
Optical Characterization and Sensitivity Evaluation of Guided-Resonances in Photonic Crystal Slabs for Biosensing Applications 2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5 Levi, O., Lee, M. M., Zhang, J., Lousse, V., Brueck, S. R., Fan, S., Harris, J. S. 2007: 993-994
View details for Web of Science ID 000268751000499
High-intensity bowtie nano-aperture Vertical-Cavity Surface-Emitting Laser for ultrahigh-density near-field optical data storage OPTICAL DATA STORAGE 2007 Rao, Z., Hesselink, L., Harris, J. S. 2007; 6620
View details for DOI 10.1117/12.738952

View details for Web of Science ID 000250199900039
Enhanced second-harmonic generation in AlGaAs/AlxOy tightly confining waveguides and resonant cavities OPTICS LETTERS Scaccabarozzi, L., Fejer, M. M., Huo, Y., Fan, S., Yu, X., Harris, J. S. 2006; 31 (24): 3626-3628
Abstract

We demonstrate second-harmonic generation (SHG) from sub-micrometer-sized AlGaAs/AlxOy artificially birefringent waveguides. The normalized conversion efficiency is the highest ever reported. We further enhanced the SHG using a waveguide-embedded cavity formed by dichroic mirrors. Resonant enhancements as high as approximately 10x were observed. Such devices could be potentially used as highly efficient, ultracompact frequency converters in integrated photonic circuits.

View details for Web of Science ID 000242560400022

View details for PubMedID 17130925
Dichroic mirror embedded in a submicrometer waveguide for enhanced resonant nonlinear optical devices OPTICS LETTERS Scaccabarozzi, L., Fejer, M. M., Huo, Y., Fan, S., Yu, X., Harris, J. S. 2006; 31 (22): 3285-3287
Abstract

We report the design, fabrication and characterization of novel dichroic mirrors embedded in a tightly confining AlGaAs/Al(x)O(y) waveguide. Reflection at the first-harmonic wavelength as high as 93% is achieved, while high transmission is maintained at the second-harmonic wavelength. The measured cavity spectrum is in excellent agreement with finite-difference time-domain simulations. Such a mirror is essential for achieving resonant enhancement of second-harmonic generation.

View details for Web of Science ID 000241799700022

View details for PubMedID 17072398
Long-wave IR chemical sensing based on difference frequency generation in orientation-patterned GaAs APPLIED PHYSICS B-LASERS AND OPTICS Bisson, S. E., Kulp, T. J., Levi, O., Harris, J. S., Fejer, M. M. 2006; 85 (2-3): 199-206
View details for DOI 10.1007/s00340-006-2311-1

View details for Web of Science ID 000240724900005
Quantum-confined Stark effect in Ge/SiGe quantum wells on Si for optical modulators IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Kuo, Y., Lee, Y. K., Ge, Y., Ren, S., Roth, J. E., Kamins, T. I., Miller, D. A., Harris, J. S. 2006; 12 (6): 1503-1513
View details for DOI 10.1109/JSTQE.2006.883146

View details for Web of Science ID 000243013700023
Contactless electroreflectance spectroscopy of Ga(In)NAs/GaAs quantum well structures containing Sb atoms Kudrawiec, R., Gladysiewicz, M., Motyka, M., Misiewicz, J., Yuen, H. B., Bank, S. R., Wistey, M. A., Bae, H. R., Harris, J. S. ELSEVIER SCIENCE BV. 2006: 152-157
View details for DOI 10.1016/j.apsusc.2006.05.111

View details for Web of Science ID 000242317500026
InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition APPLIED PHYSICS LETTERS Goel, N., Majhi, P., Chui, C. O., Tsai, W., Choi, D., Harris, J. S. 2006; 89 (16)
View details for DOI 10.1063/1.2363959

View details for Web of Science ID 000241405200124
Terahertz-wave generation in quasi-phase-matched GaAs APPLIED PHYSICS LETTERS Vodopyanov, K. L., Fejer, M. M., Yu, X., Harris, J. S., Lee, Y., Hurlbut, W. C., Kozlov, V. G., Bliss, D., Lynch, C. 2006; 89 (14)
View details for DOI 10.1063/1.2357551

View details for Web of Science ID 000241056900019
InSb and InSb : N multiple quantum dots APPLIED PHYSICS LETTERS Hatami, F., Kim, S. M., Yuen, H. B., Harris, J. S. 2006; 89 (13)
View details for DOI 10.1063/1.2357546

View details for Web of Science ID 000240875800115
Mid-infrared luminescence of an InNAsSb/InAs single quantum well grown by molecular beam epitaxy APPLIED PHYSICS LETTERS Yuen, H. B., Kim, S. M., Hatami, F., Harris, J. S., Chin, A. H. 2006; 89 (12)
View details for DOI 10.1063/1.2356102

View details for Web of Science ID 000240680300041
Neural stimulation with a carbon nanotube microelectrode array NANO LETTERS Wang, K., Fishman, H. A., Dai, H., Harris, J. S. 2006; 6 (9): 2043-2048
Abstract

We present a novel prototype neural interface using vertically aligned multiwalled carbon nanotube (CNT) pillars as microelectrodes. Functionalized hydrophilic CNT microelectrodes offer a high charge injection limit (1-1.6 mC/cm2) without faradic reactions. The first repeated in vitro stimulation of hippocampal neurons with CNT electrodes is demonstrated. These results suggest that CNTs are capable of providing far safer and more efficacious solutions for neural prostheses than previous metal electrode approaches.

View details for DOI 10.1021/nl061241t

View details for Web of Science ID 000240465100037

View details for PubMedID 16968023
Dilute magnetic semiconductors based on InN Ney, A., Rajaram, R., Harris, J. S., Parkin, S. S. TAYLOR & FRANCIS LTD. 2006: 785-791
View details for DOI 10.1080/01411590601124796

View details for Web of Science ID 000243502200011
Optoelectronic switches based on diffusive conduction JOURNAL OF APPLIED PHYSICS Demir, H. V., Koklu, F. H., Yairi, M. B., Harris, J. S., Miller, D. A. 2006; 100 (4)
View details for DOI 10.1063/1.2234818

View details for Web of Science ID 000240236800008
An evanescent-coupling approach to making stable fiber-coupled semiconductor lasers APPLIED PHYSICS LETTERS Khalili, A., Bae, H., Harris, J. S. 2006; 89 (4)
View details for DOI 10.1063/1.2234591

View details for Web of Science ID 000239376500005
Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes APPLIED PHYSICS LETTERS Bank, S. R., Yuen, H. B., Bae, H., Wistey, M. A., Moto, A., Harris, J. S. 2006; 88 (24)
View details for DOI 10.1063/1.2213176

View details for Web of Science ID 000238314800041
Interband transitions in GaN0.02As0.98-xSbx/GaAs (0 < x <= 0.11) single quantum wells studied by contactless electroreflectance spectroscopy PHYSICAL REVIEW B Kudrawiec, R., Gladysiewicz, M., Misiewicz, J., Yuen, H. B., Bank, S. R., Wistey, M. A., Bae, H. P., Harris, J. S. 2006; 73 (24)
View details for DOI 10.1103/PhysRevB.73.245413

View details for Web of Science ID 000238696900111
Effects of strain on the optimal annealing temperature of GaInNAsSb quantum wells APPLIED PHYSICS LETTERS Yuen, H. B., Bank, S. R., Bae, H., Wistey, M. A., Harris, J. S. 2006; 88 (22)
View details for DOI 10.1063/1.2208937

View details for Web of Science ID 000238001900031
Band gap discontinuity in Ga0.9In0.1N0.027As0.973-xSbx/GaAs single quantum wells with 0 <= x < 0.06 studied by contactless electroreflectance spectroscopy APPLIED PHYSICS LETTERS Kudrawiec, R., Motyka, M., Gladysiewicz, M., Misiewicz, J., Yuen, H. B., Bank, S. R., Bae, H., Wistey, M. A., Harris, J. S. 2006; 88 (22)
View details for DOI 10.1063/1.2208949

View details for Web of Science ID 000238001900013
Overannealing effects in GaInNAs(Sb) alloys and their importance to laser applications APPLIED PHYSICS LETTERS Bank, S. R., Yuen, H. B., Bae, H., Wistey, M. A., Harris, J. S. 2006; 88 (22)
View details for DOI 10.1063/1.2208375

View details for Web of Science ID 000238001900015
The role of antimony on properties of widely varying GaInNAsSb compositions JOURNAL OF APPLIED PHYSICS Yuen, H. B., Bank, S. R., Bae, H., Wistey, M. A., Harris, J. S. 2006; 99 (9)
View details for DOI 10.1063/1.2191745

View details for Web of Science ID 000237682900024
Integrated photonic switches for nanosecond packet-switched optical wavelength conversion OPTICS EXPRESS Fidaner, O., Demir, H. V., Sabnis, V. A., Zheng, J. F., Harris, J. S., Miller, D. A. 2006; 14 (1): 361-368
Abstract

We present a multifunctional photonic switch that monolithically integrates an InGaAsP/InP quantum well electroabsorption modulator and an InGaAs photodiode as a part of an on-chip, InP optoelectronic circuit. The optical multifunctionality of the switch offers many configurations to allow for different optical network functions on a single chip. Here we experimentally demonstrate GHz-range optical wavelength-converting switching with only ~10 mW of absorbed input optical power, electronically controlled packet switching with a reconfiguration time of <2.5 ns, and optically controlled packet switching in <300 ps.

View details for Web of Science ID 000234538800040

View details for PubMedID 19503349
Integrated biomedical nanosensor using guided resonance in photonic crystal structures NANOBIOPHOTONICS AND BIOMEDICAL APPLICATIONS III Levi, O., Suh, W., Lee, M. M., Zhang, J., Brueck, S. R., Fan, S., Harris, J. S. 2006; 6095
View details for DOI 10.1117/12.647312

View details for Web of Science ID 000237699500014
A highly stable evanescently-coupled fiber semiconductor laser Khalili, A., Bae, H., Harris, J., S. 2006
Low-threshold CW 1.55- mu m GaAs-based lasers Harris, J., S., Bank, S., R., Bae, H., P., Yuen, H., B., Goddard, L., L., Wistey, M., A. 2006
A high-intensity nano-aperture vertical-cavity surface-emitting laser with controlled polarization Rao, Z., L., Matteo, J., A., Hesselink, L., Harris, J., S. 2006
Self-aligned via and trench for metal contact in III-V semiconductor devices J. Vac. Sci. Technol. Zheng, J., F., Demir, H., V., Sabnis, V., A., Fidaner, O., Harris, J., S., Miller, D., A.B. 2006; 3 (24): 1117-122
Room-temperature continuous-wave 1.55 µm GaInNAsSb laser on GaAs Electron. Lett. Bank, S., R., Bae, H., Yuen, H., B., Wistey, M., A., Goddard, L., L., Harris, J., S. 2006; 3 (42): 156-7
Photoluminescence and electroabsorption in GaNAs/GaAsSb heterojunctions Electron. Lett. Yang, H., Lordi, V., Harris, J., S. 2006; 1 (42): 52-4
Very Low-Threshold 1.55-μm Dilute-Nitride Lasers Bank, S., R., Bae, H., P., Goddard, L., L., Yuen, H., B., Wistey, M., A., Harris, J., S. 2006
New light from gallium arsenide: micro-structured GaAs for mid-IR and THz-wave generation Vodopyanov, K., L., Schaar, J., E., Kuo, P., S., Fejer, M., M., Yu, X., Harris, J., S. 2006
Ge/SiGe quantum confined Stark effect modulators on silicon Harris, J., S., Kuo, Y., H., Miller, S., A.B. 2006
Temperature dependent magnetic properties of the GaAs substrate of spin-LEDs J. Phys.: Con. Mat. Ney, A., Harris, J., S., Parkin, S., S.P. 2006; 17 (18): 4397-406
Structural and magnetic properties of Cr and Mn doped InN J. Mag. Magnetic Materials Ney, A., Rajaram, R., Arenholz, E., Harris, J., S., Samant, M., Farrow, R., F.C. 2006; 1 (300): 7-11
High-power source of THz radiation based on orientation-patterned GaAs pumped by a fiber laser Optics Express Imeshev, G., Fermann, M., E., Vodopyanov, K., L., Fejer, M., M., Yu, X., Harris, J., S. 2006: 4439-444
Calcium impurities in enhanced-depletion-width GaInNAs grown by molecular-beam epitaxy J. Vac. Sci. Technol. Harris, J., S., Ptak, A., J., Friedman, D., J., Kurtz, S., Reedy, R., C., Young, M. 2006; 3 (24): 1540-43
Monolithic GaInNAsSb vertical cavity surface emitting lasers at 1534 nm Wistey, M., A., Bank, S., R, Bae, H., Yuen, H., B., Goddard, L., L., Harris, J., S. 2006
Investigation of nitrogen induced closely coupled Sb based quantum dots for infrared sensors application Kim, S., M., Hatami, F., Yuen, H., B., Harris, J., S. 2006
GaAs optical parametric oscillator with a circularly polarized pump Kuo, P., S., Vodopyanov, K., L., Fejer, M., M., Yu, X., Lin, A., C., Harris, J., S. 2006
0.8-3.5 THz source based on fiber-laser pumped orientation-patterned GaAs Harris, J., S., Vodopyanov, K., L., Imeshev, G., Fermann, M., E., Fejer, M., M. 2006
Standing-wave Fourier transform interferometer with an HPT IEEE Photon. Techn. Lett. Fu, J., X., Yu, X., Zhang, B., Harris Jr., J., S. 2006; 1 (18): 40-2
GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm Electron. Lett. Harris, J., S., Wistey, M., A., Bank, S., R., Bae, H., Yuen, H., B., Pickett, E., R. 2006; 5 (42): 282-3
Guided-resonance in photonic crystal slabs for biosensing applications Levi, O., Suh, W., Lee, M., M., Solgaard, O., Harris, J., S. 2006
Structural and magnetic behavior of transition metal doped InN grown by molecular beam epitaxy J. Vac. Sci. Techn. Rajaram, R., Ney, A., Farrow, R., F.C., Parkin, S., S.P., Solomon, G., S., Harris Jr., J., S. 2006; 3 (B24): 1644-8
Green emission from InP-GaP quantum-dot light-emitting diodes IEEE Photon. Techn. Lett. Hatami, F., Masselink, W., T., Lordi, V., Harris, J., S. 2006; 18: 895-897
Tunable THz source based on frequency conversion in quasi-phase-matched GaAs Vodopyanov, K., L., Schaar, J., Fejer, M., M., Yu, X., Harris, J., S., Lee, Y., S. 2006
Temperature and Humidity Dependent Reliability Analysis of RGB LED Chip Fu, J., X., Souri, S., Harris Jr., J., S. 2006
Nonlinear optical effects in InxGa(1-x)As quantum systems for saturable absorbers Aldaz, R., I., Wiemer, M., W., Miller, D., A.B., Harris, J., S. 2006
Dilute nitride lasers and photodetectors Harris, J., S. 2006
Photoreflectance spectroscopy of a Ga0.62In0.38N0.026As0.954Sb0.02/GaAs single quantum well tailored at 1.5 µm Solid State Communic. Harris, J., S., Kudrawiec, R., Gladysiewicz, M., Misiewicz, J., Yuen, H., B., Bank, S., R. 2006; 1 (137): 138-141
Colour-tunable light-emitting diodes based on InP/GaP nanostructures Nanotechnology Hatami, F., Masselink, W., T., Harris, J., S. 2006; 15 (17): 3703-06
Biomedical terahertz imaging with a quantum cascade laser Appl. Phys. Lett. Kim, S., M., Hatami, F., Harris, J., S., Kurian, A., W., Ford, J., King, D. 2006; 15 (88): 1539031-3
Integrated semiconductor optical sensors for chronic, minimally-invasive imaging of brain function 2006 28TH ANNUAL INTERNATIONAL CONFERENCE OF THE IEEE ENGINEERING IN MEDICINE AND BIOLOGY SOCIETY, VOLS 1-15 Lee, T. T., Levi, O., Cang, J., Kaneko, M., Stryker, M. P., Smith, S. J., Shenoy, K. V., Harris, J. S. 2006: 2443-2446
View details for Web of Science ID 000247284702192
GaInNAsSb solar cells grown by molecular beam epitaxy CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2 Jackrel, D., Ptak, A., Bank, S., Yuen, H., Wistey, M., Friedman, D., Kurtz, S., Harris, J. S. 2006: 783-786
View details for Web of Science ID 000241251600200
Germanium electroabsorption devices on silicon for optical interconnects SILICON PHOTONICS Kuo, Y., Miller, D. A., Harris, J. S. 2006; 6125
View details for DOI 10.1117/12.674733

View details for Web of Science ID 000237274900009
A C-shaped nanoaperture Vertical-Cavity Surface-Emitting Laser for high-density near-field optical data storage VERTICAL-CAVITY SURFACE-EMITTING LASERS X Rao, Z., Matteo, J. A., Hesselink, L., Harris, J. S. 2006; 6132
View details for DOI 10.1117/12.645083

View details for Web of Science ID 000237084500016
Compact standing-wave Fourier-transform interferometer with harmonic spectral analysis COHERENCE DOMAIN OPTICAL METHODS AND OPTICAL COHERENCE TOMOGRAPHY IN BIOMEDICINE X Fu, J., Yu, X., Zhang, B., Harris, J. S. 2006; 6079
View details for DOI 10.1117/12.649113

View details for Web of Science ID 000237132000041
Integrated semiconductor optical sensors for chronic, minimally-invasive imaging of brain function. Conference proceedings : ... Annual International Conference of the IEEE Engineering in Medicine and Biology Society. IEEE Engineering in Medicine and Biology Society. Conference Lee, T. T., Levi, O., Cang, J., Kaneko, M., Stryker, M. P., Smith, S. J., Shenoy, K. V., Harris, J. S. 2006; 1: 1025-1028
Abstract

Intrinsic optical signal (IOS) imaging is a widely accepted technique for imaging brain activity. We propose an integrated device consisting of interleaved arrays of gallium arsenide (GaAs) based semiconductor light sources and detectors operating at telecommunications wavelengths in the near-infrared. Such a device will allow for long-term, minimally invasive monitoring of neural activity in freely behaving subjects, and will enable the use of structured illumination patterns to improve system performance. In this work we describe the proposed system and show that near-infrared IOS imaging at wavelengths compatible with semiconductor devices can produce physiologically significant images in mice, even through skull.

View details for PubMedID 17946016
Ge/SiGe quantum-confined stark modulators on silicon 2006 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 Harris, J. S. 2006: 903-904
View details for Web of Science ID 000246167900456
Photoreflectance spectroscopy of a Ga0.62In0.38N0.026As0.954Sb0.02/GaAs single quantum well tailored at 1.5 mu m SOLID STATE COMMUNICATIONS Kudrawiec, R., Gladysiewicz, M., Misiewicz, J., Yuen, H. B., Bank, S. R., Wistey, M. A., Bae, H. P., Harris, J. S. 2006; 137 (3): 138-141
View details for DOI 10.1016/j.ssc.2005.11.006

View details for Web of Science ID 000234628100008
Optical parametric generation of a mid-infrared continuum in orientation-patterned GaAs OPTICS LETTERS Kuo, P. S., Vodopyanov, K. L., Fejer, M. M., Simanovskii, D. M., Yu, X., Harris, J. S., Bliss, D., Weyburne, D. 2006; 31 (1): 71-73
Abstract

We have generated an ultrabroad mid-infrared continuum by using single-pass optical parametric generation (OPG) in orientation-patterned GaAs (OP-GaAs). The spectrum spans more than an octave, from 4.5 to 10.7 microm, measured 20 dB down from the peak. The 17.5 mm long, 0.5 mm thick, all-epitaxially-grown OP-GaAs sample with a 166.6-microm quasi-phase-matching period was pumped with 3.1-3.3 microm wavelength, 1 ps pulses up to 2 microJ in energy. The OPG threshold was observed at 55 nJ pump energy with the pump polarized along the [111] crystal direction. The slope efficiency near threshold was 51%, and the external conversion efficiency was as high as 15%.

View details for Web of Science ID 000234181600023

View details for PubMedID 16419881
Comparative analysis of bio-medical imaging at 3.7 terahertz with a high power quantum cascade laser 2006 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 Kim, S. M., Hatami, F., Gu, A., Kurian, A. W., Ford, J., Harris, J. S., Scalari, G., Faist, J. 2006: 231-232
View details for Web of Science ID 000246167900117
Bio-medical imaging with a terahertz quantum cascade laser NANOBIOPHOTONICS AND BIOMEDICAL APPLICATIONS III Kim, S. M., Hatami, F., Kurian, A. W., Ford, J., Harris, J. S., Scalari, G., Giovannini, M., Hoyler, N., Faist, J., Harris, G. 2006; 6095
View details for DOI 10.1117/12.647233

View details for Web of Science ID 000237699500007
Novel on-chip fully monolithic integration of GaAs devices with completely fabricated SiCMOS circuits IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Ma, K., Chen, R., Miller, D. A., Harris, J. S. 2005; 11 (6): 1278-1283
View details for DOI 10.1109/JSTQE.2005.860991

View details for Web of Science ID 000235144100005
Strong quantum-confined Stark effect in germanium quantum-well structures on silicon NATURE Kuo, Y. H., Lee, Y. K., Ge, Y. S., Ren, S., Roth, J. E., Kamins, T. I., Miller, D. A., Harris, J. S. 2005; 437 (7063): 1334-1336
Abstract

Silicon is the dominant semiconductor for electronics, but there is now a growing need to integrate such components with optoelectronics for telecommunications and computer interconnections. Silicon-based optical modulators have recently been successfully demonstrated; but because the light modulation mechanisms in silicon are relatively weak, long (for example, several millimetres) devices or sophisticated high-quality-factor resonators have been necessary. Thin quantum-well structures made from III-V semiconductors such as GaAs, InP and their alloys exhibit the much stronger quantum-confined Stark effect (QCSE) mechanism, which allows modulator structures with only micrometres of optical path length. Such III-V materials are unfortunately difficult to integrate with silicon electronic devices. Germanium is routinely integrated with silicon in electronics, but previous silicon-germanium structures have also not shown strong modulation effects. Here we report the discovery of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon. The QCSE here has strengths comparable to that in III-V materials. Its clarity and strength are particularly surprising because germanium is an indirect gap semiconductor; such semiconductors often display much weaker optical effects than direct gap materials (such as the III-V materials typically used for optoelectronics). This discovery is very promising for small, high-speed, low-power optical output devices fully compatible with silicon electronics manufacture.

View details for DOI 10.1038/nature04204

View details for Web of Science ID 000232829100048

View details for PubMedID 16251959
Photoluminescence from as-grown and annealed GaN0.027As0.863Sb0.11/GaAs single quantum wells JOURNAL OF APPLIED PHYSICS Kudrawiec, R., Motyka, M., Misiewicz, J., Yuen, H. B., Bank, S. R., Wistey, M. A., Bae, H. P., Harris, J. S. 2005; 98 (6)
View details for DOI 10.1063/1.2060940

View details for Web of Science ID 000232226000033
Arsenic surface segregation during in situ doped silicon and Si1-xGex molecular beam epitaxy JOURNAL OF CRYSTAL GROWTH Liu, X., Tang, Q., Harris, J. S., Kamins, T. I. 2005; 281 (2-4): 334-343
View details for DOI 10.1016/j.jcrysgro.2005.04.066

View details for Web of Science ID 000231011600019
Effects of antimony and ion damage on carrier localization in molecular-beam-epitaxy-grown GaInNAs JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Bank, S. R., Wistey, M. A., Yuen, H. B., Lordi, V., Gambin, V. F., Harris, J. S. 2005; 23 (3): 1320-1323
View details for DOI 10.1116/1.1878995

View details for Web of Science ID 000230479600087
The opportunities, successes and challenges for GaInNAsSb JOURNAL OF CRYSTAL GROWTH Harris, J. S. 2005; 278 (1-4): 3-17
View details for DOI 10.1016/j.jcrysgro.2004.12.050

View details for Web of Science ID 000228916300002
Monolithically integrated semiconductor fluorescence sensor for microfluidic applications SENSORS AND ACTUATORS B-CHEMICAL Thrush, E., Levi, O., Cook, L. J., Deich, J., Kurtz, A., Smith, S. J., Moerner, W. E., Harris, J. S. 2005; 105 (2): 393-399
View details for DOI 10.1016/j.snb.2004.06.028

View details for Web of Science ID 000227882000041
Interference effects in electromodulation spectroscopy applied to GaAs-based structures: A comparison of photoreflectance and contactless electroreflectance APPLIED PHYSICS LETTERS Kudrawiec, R., Sitarek, P., Misiewicz, J., Bank, S. R., Yuen, H. B., Wistey, M. A., Harris, J. S. 2005; 86 (9)
View details for DOI 10.1063/1.1873052

View details for Web of Science ID 000228991600015
Conductance fluctuations and partially broken spin symmetries in quantum dots Phys. Rev. B Zumbuhl, D., M., Miller, J., B., Marcus, C., M., Goldhaber-Gordon, D., Harris, J., S., Campman, K. 2005; 8 (72): 81305
Reconfigurable magnetologic computing using the spin flop switching of a magnetic random access memory cell Appl. Phys. Lett. Ney, A., Harris, J., S. 2005; 11 (86): 13502-1-3
Interference effects in electromodulation spectroscopy applied to GaAs-based structures: A comparison of photoreflectance and contactless electroreflectance Appl. Phys. Lett. Harris, J., S., Kudrawiec, R., Sitarek, P., Misiewicz, J., Bank, S., R., Yuen, H., B. 2005; 86 (091115-17)
Linear electro-optic conversion of sampled voltage signals using a low-temperature-grown GaAs MSM and a multiple quantum well modulato Chin, H., Urata, U., Chen, R., Miller, D., A. B., Ma, K., Harris Jr., J., S 2005
Investigation of GaNAsSb/GaAs and GaInNAsSb/GaNAs/GaAs Band Offsets Harris, J., S., Yuen, H., B., Kudrawiec, R., Ryczko, K., Bank, S., R., Wistey, M., A. 2005
Using beam flux monitor as Langmuir probe for plasma-assisted molecular beam epitaxy J. Vac. Sci. Techn. B Wistey, M., A., Bank, S., R., Yuen, H., B., Harris, J., S., Oye, M., M., Holmes, A., L. 2005; 3 (23): 460-4
Temperature Independence of the Spin Injection Efficiency of a MgO-based Tunnel Spin Injector Appl. Phys. Lett. Salis, G., Wang, R., Jiang, X., Shelby, R., M., Bank, S., R., Harris, J., S. 2005; 87: 2625031-3
Photoluminescence from as-grown and annealed GaN0.027As0.863Sb0.11/GaAs single quantum wells J. Appl. Phys. Harris, J., S., Kudrawiec, R., Motyka, M., Misiewicz, J., Yuen, H., B., Bank, S., R. 2005; 6 (98): 063527-31
MSM-based integrated CMOS wavelength-tunable optical receiver IEEE Photon. Techn. Lett. Chen, R., Chin, H., Miller, D., A. B., Ma, K., Harris, J., S. 2005; 6 (17): 1271-3
In situ p-n junctions and gated devices in titanium-silicide nucleated si nanowires Electrochem Solid-State Lett. Tang, Q., Kamins, T., I., Liu, X., Grupp, D., E., Harris, J., S. 2005; 8 (8): G204-8
Improved Optical Quality from GaNAsSb in the Dilute Sb Limit J. Appl. Phys. Harris, J., S., Yuen, H., B., Seong, M., J., Kudrawiec, R., Yoon, S., Bank, S., R. 2005; 11 (97): 113510-1-5
A single transverse-mode monolithically integrated long vertical-cavity surface-emitting laser IEEE Photon. Techn. Lett. Wiemer, M., W., Aldaz, R., I., Miller, D., A. B., Harris, J., S. 2005; 7 (17): 1366-8
MBE grown GaInNAs solar cells for multijunction applications Harris, J., S., Jackrel, D., Yuen, H., Fu, J., Bank, S., Yu, X. 2005
Fabrication and characterization of tightly confining AlGaAs waveguides and microcavities for nonlinear optical applications Harris, J., S., Scaccabarozzi, L., Wang, Z., Yu, X., Lee, M., M., Lau, W., T. 2005
Extended InGaAs/InGaAs quantum structures for near infrared photodetection beyond 1.9 µm Fu, J., Yu, X., Kuo, Y., H., Harris Jr., J., S. 2005
InP based double heterojunction phototransistor with graded emitter-base junction and base-collector junction Fu, J., X., Harris Jr., J., S. 2005
Highly stable in-line semiconductor fiber laser Khalili, A., Harris Jr., J., S. 2005
Differential Gain and Non-linear Gain Compression of GaInNAsSb/GaAs Lasers at 1.5µm Goddard, L., Bank, S., Wistey, M., Yuen, H., Bae, H., Harris, J., S. 2005
Red light-emitting diodes based on InP/GaP quantum dots J. Appl. Phys. Hatami, F., Lordi, V., Harris, J., S., Kostial, H., Masselink, W., T. 2005; 9 (97): 96106-1-3
On the temperature sensitivity of 1.5-µm GaInNAsSb lasers IEEE J. Select. Topics Quan. Electron. Bank, S., R., Goddard, L., L., Wistey, M., A., Yuen, H., B., Harris, J., S. 2005; 5 (11): 1089-98
Increase in spin injection efficiency of a CoFe/MgO(100) tunnel spin injector with thermal annealing Appl. Phys. Lett. Harris, J., S., Wang, R., Jiang, X., Shelby, R., M., Macfarlane, R., M., Parkin, S., S. P. 2005; 5 (86): 052901-3
Highly spin-polarized room-temperature tunnel injector for semiconductor spintronics using MgO(100) Phys. Rev. Lett. Jiang, X., Wang, R., Shelby, R., M., Macfarlane, R., M., Bank, S., R., Harris, J., S. 2005; 5 (94): 056601/1-4
Efficient continuous wave second harmonic generation pumped at 1.55 µm in quasi-phase-matched AlGaAs waveguides Optics Express Yu, X., Scaccabarozzi, L., Harris, J., S., Kuo, P., S., Fejer, M., M. 2005; 26 (13): 10742-10753
(GaIn)(NAsSb): the challenges for long wavelength communications devices Harris Jr., J., S. 2005
Spectral shaping of electrically controlled MSM-based tunable photodetectors IEEE Photon. Techn. Lett. Chen, R., Fu, J., X., Miller, D., A.B., Harris, J., S. 2005; 10 (17): 2158-60
Self-aligning planarization and passivation for integration applications in III-V semiconductor devices IEEE Trans Semiconductor Manufacturing Demir, H., V., Zheng, J., F., Sabnis, V., A., Fidaner, O., Hanberg, J., Harris, J., S. 2005; 1 (18): 182-89
Protecting wafer surface during plasma ignition using an arsenic cap J. Vac. Sci. Techn. B Wistey, M., A., Bank, S., R., Yuen, H., B., Goddard, L., L., Gugov, T., Harris, J., S. 2005; 3 (23): 1324-7
Novel electrically controlled rapidly wavelength selective photodetection using MSMs IEEE J. Selected Topics in Quantum Electron. Chen, R., Miller, D., A. B., Ma, K., Harris, J., S. 2005; 1 (11): 184-89
Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1.5 µm J. Vac. Sci. Techn. B Bank, S., R., Wistey, M., A., Yuen, H., B., Goddard, L., L., Bae, H., P., Harris, J., S. 2005; 3 (23): 1324-27
Mn- and Cr-doped InN: A promising diluted magnetic semiconductor material J. Superconductivity Ney, A., Rajaram, R., Farrow, R., F. C., Harris, J., S., Parkin, S., S. P. 2005; 1 (18): 41-4
Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides Appl. Phys. Lett. Harris, J., S., Oye, M., M., Wistey, M., A., Reifsnider, J., M., Agarwal, S., Mattord, T., J. 2005; 22 (86): 221902-1-3
Intimate monolithic integration of chip-scale photonic circuits IEEE J. Sel. Topics Quant. Electron. Sabnis, V., A., Demir, H., V., Fidaner, O., Zheng, J., F., Harris, J., S., Miller, D., A. B. 2005; 6 (11): 1255-65
Growth and magnetism of Cr-doped InN Appl.Phys. Lett. Rajaram, R., Ney, A., Farrow, R., F. C., Solomon, G., Harris Jr., J., S., Parkin, S., S. P. 2005; 6 (87): 1725111-3
Effects of growth temperature on the structural and optical properties of 1.55 µm GaInNAsSb quantum wells grown on GaAs Appl. Phys. Lett. Bank, S., R., Yuen, H., B., Wistey, M., A., Lordi, V., Bae, H., P., Harris, J., S. 2005; 2 (87): 21908-1-3
Multifunctional integrated photonic switches IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Demir, H. V., Sabnis, V. A., Fidaner, O., Zheng, J. F., Harris, J. S., Miller, D. A. 2005; 11 (1): 86-96
View details for DOI 10.1109/JSTQE.2004.841715

View details for Web of Science ID 000227014900010
Investigation of nitrogen flow variation into a radio frequency plasma cell on plasma properties and GaInNAs grown by molecular beam epitaxy J. Vac. Sci. Techn. B Yuen, H., B., Wistey, M., A., Bank, S., R., Bae, H., P., Harris, J., S. 2005; 3 (23): 1328-32
High-performance GaInNAsSb/GaAs lasers at 1.5 µm Goddard, L., L., Bank, S., R., Wistey, M., A., Yuen, H., B., Harris Jr., J., S. 2005
Fabrication of a carbon nanotube protruding electrode array for a retinal prosthesis Wang, K., Dai, H., Fishman, H., A., Harris Jr., J., S. 2005
1.55µm GaInNAsSb lasers on GaAs Bank, S., Wistey, M., Goddard, L., Yuen, H., Bae, H., Harris Jr., J., S. 2005
Recombination, gain, band structure, efficiency, and reliability of 1.5 µm GaInNAsSb/GaAs lasers J. Appl. Phys. Goddard, L., L., Bank, S., R., Wistey, M., A., Yuen, H., B., Rao, Z., Harris Jr., J., S. 2005; 8 (97): 083101-16
Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb/GaAsN/GaAs quantum well tailored at 1.5 µm: The energy level structure and the Stokes shift J. Appl. Phys. Harris, J., S., Kudrawiec, R., Yuen, H., B., Ryczko, K., Misiewicz, J., Bank, S., R. 2005; 97: 53515
Nearest-neighbor distributions in Ga(1-x)InxNyAs(1-y) and Ga(1-x)InxNyAs(1-y-z)Sbz thin films upon annealing Phys. Rev. B. Lordi, V., Yuen, H., B., Bank, S., R., Wistey, M., A., Harris, J., S., Friedrich, S. 2005; 12 (71): 125309-18
Side-coupled fibre semiconductor laser Electron. Lett. Khalili, A., Harris, J., S. 2005; 20 (41): 1128-30
Effects of antimony and ion damage on carrier localization in molecular-beam-epitaxy-grown GaInNAs J. Vac. Sci. Techn. B Bank, S., R., Wistey, M., A., Yuen, H., B., Lordi, V., Gambin, V., Harris, J., S. 2005; 3 (23): 1320-3
Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1.3-1.55 mu m JOURNAL OF APPLIED PHYSICS Yuen, H. B., Bank, S. R., Wistey, M. A., Harris, J. S., Moto, A. 2004; 96 (11): 6375-6381
View details for DOI 10.1063/1.1807028

View details for Web of Science ID 000225300800066
Optical parametric oscillation in quasi-phase-matched GaAs OPTICS LETTERS Vodopyanov, K. L., Levi, O., Kuo, P. S., Pinguet, T. J., Harris, J. S., Fejer, M. M., Gerard, B., Becouarn, L., Lallier, E. 2004; 29 (16): 1912-1914
Abstract

We demonstrate an optical parametric oscillator (OPO) based on GaAs. The OPO utilizes an all-epitaxially-grown orientation-patterned GaAs crystal that is 0.5 mm thick, 5 mm wide, and 11 mm long, with a domain reversal period of 61.2 microm. Tuning either the near-IR pump wavelength between 1.8 and 2 microm or the temperature of the GaAs crystal allows the mid-IR output to be tuned between 2.28 and 9.14 microm, which is limited only by the spectral range of the OPO mirrors. The pump threshold of the singly resonant OPO is 16 microJ for the 6-ns pump pulses, and the photon conversion slope efficiency reaches 54%. We also show experimentally the possibility of pump-polarization-independent frequency conversion in GaAs.

View details for Web of Science ID 000223074600026

View details for PubMedID 15357357
Use of transmission electron microscopy in the characterization of GaInNAs(Sb) quantum well structures grown by molecular beam epitaxy JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Gugov, T., Gambin, V., Wistey, M., Yuen, H., Bank, S., Harris, J. S. 2004; 22 (3): 1588-1592
View details for DOI 10.1116/1.1650853

View details for Web of Science ID 000222481400146
Dual-diode quantum-well modulator for C-band wavelength conversion and broadcasting OPTICS EXPRESS Demir, H. V., Sabnis, V. A., Fidaner, O., Harris, J. S., Miller, D. A., Zheng, J. F. 2004; 12 (2): 310-316
Abstract

We present a dual-diode, InGaAsP/InP quantum-well modulator that incorporates a monolithically-integrated, InGaAs photodiode as a part of its on-chip, InP optoelectronic circuit. We theoretically show that such a dual-diode modulator allows for wavelength conversion with 10-dB RF-extinction ratio using 7 mW absorbed optical power at 10 Gb/s. We experimentally demonstrate unlimited wavelength conversion across 45 nm between 1525 nm and 1570 nm, and dual-wavelength broadcasting over 20 nm between 1530 nm and 1565 nm, spanning the entire C-band with >10dB RF-extinction ratio and using 3.1-6.7 mW absorbed optical power at 1.25 Gb/s.

View details for Web of Science ID 000188383200011

View details for PubMedID 19471539
Greater than 10(6) optical isolation in integrated optoelectronic fluorescence sensor. Conference proceedings : ... Annual International Conference of the IEEE Engineering in Medicine and Biology Society. IEEE Engineering in Medicine and Biology Society. Conference Thrush, E., Levi, O., Cook, L., Smith, S., Harris, J. 2004; 3: 2080-2081
Abstract

Integrated optoelectronic sensors hold much potential for bio-medical applications. Our work focuses on the use of semiconductor lasers, photodetectors and filters to create a monolithically integrated near-infrared fluorescence sensor. Previous research has found that the close integration of these components results in large laser background levels from spontaneous emission emitted from the side of the laser and limits sensor sensitivity. This work presents an improved optical blocking structure between the laser and photodetector which results in greater than 10(6) optical isolation. This level of isolation will allow for sensitive fluorescence detection and shows that optoelectronic components can be successfully integrated for such purposes.

View details for PubMedID 17272131
A broadly tunable high-resolution IR cavity ring-down spectrometer based on difference frequency generation in orientation-patterned GaAs Bisson, S., E., Kulp, T., J., Levi, O., Harris, J., Fejer, M., M. 2004
Photoelectronic analog-to-digital conversion: Sampling and quantizing at 100 Gs/s IEEE Trans. Microwave Theory Techn. Harris, J., S., Ioakeimidi, K., Leheny, R., F., Gradinaru, S., Bolton, P., R., Aldana, R. 2004; 1 (53): 336-42
Monolithically-integrated long vertical cavity surface emitting laser incorporating a concave micromirror on a glass substrate Optics Express Aldaz, R., I., Wiemer, M., W., Miller, D., A. B., Harris Jr., J., S. 2004; 17 (12): 3967-71
Low-threshold continuous-wave 1.5-µm GaInNAsSb lasers grown on GaAs IEEE J. Quantum Electron. Bank, S., R., Wistey, M., A., Goddard, L., L., Yuen, H., B., Lordi, V., Harris, J., S. 2004; 6 (40): 656-64
A new route to zero-barrier metal source/drain MOSFETs IEEE Trans. Nanotechnology Connelly, D., Faulkner, C., Grupp, D., E., Harris, J., S. 2004; 1 (3): 98-104
Monolithic integration of GaAs devices with completely fabricated Si CMOS Ma, K., Chen, R., Miller, D., A. B., Harris Jr., J., S. 2004
Low threshold, CW, room temperature 1.50 µm GaAs-based lasers Bank, S., R., Wistey, M., A., Yuen, H., B., Goddard, L., L., Harris Jr., J., S. 2004
Integrated semiconductor bio-fluorescence sensor integrated on micro-fluidic platform Thrush, E., Levi, O., Cook, L., J., Harris Jr., J., S., Smith, S., J 2004
GaNAs/GaAsSb type II active regions for 1.3-1.5 µm operation Yang, H., Lordi, V., Harris, J., S. 2004
Growth of III-V Nitrides by Pulsed Laser Deposition (Optoelectronic Properties of Semiconductors and Superlattices; III-V Nitride Semiconductors: Growth and Substrate Issues Huang, T., F., Harris Jr., J., S. edited by Omar, M., Ian, M., Breach, F. G. 2004
Widely tunable Al 2O3-GaAs DBR filters with variable tuning characteristics IEEE J. Selected Topics Quantum Electronics Lin, C., C., Fu, J., X., Harris, J., S. 2004; 3 (10): 614-21
Integrated semiconductor vertical-cavity surface-emitting lasers and PIN photodetectors for biomedical fluorescence sensing IEEE J Quantum Electron. Harris, J., S., Thrush, E., Levi, O., Ha, W., Carey, G., Cook, L., J. 2004; 5 (40): 491-8
High-speed, optical switching based on diffusive conduction in an optical waveguide with surface-normal optical control J. Appl Phys. Sabnis, V., A., Demir, H., V., Yairi, M., B., Harris Jr., J., S., Miller, D., A. B. 2004; 5 (95): 2258-63
High-performance 1.5 µm GalnNAsSb lasers grown on GaAs Electron. Lett. Bank, S., R., Wistey, M., A., Goddard, L., L., Yuen, H., B., Bae, H., P., Harris, J., S. 2004; 19 (40): 1186-7
High-frequency modulation characteristics of 1.3-µm InGaAs quantum dot lasers IEEE Photon. Technol. Lett. Kim, S., M., Wang, Y., Keever, M., Harris, J., S. 2004; 2 (16): 377-379
Side-coupled in-line fiber-semiconductor laser Khalili, A., Wistey, M., A., Harris Jr., J., S. 2004
Novel scalable wavelength-converting crossbar Demir, H., V., Sabnis, V., A., Fidaner, O., Harris Jr., J., S., Miller, D., A. B., Zheng, J., F. 2004
Monolithically integrated long vertical cavity surface laser incorporating a concave micromirror on a glass substrate Aldaz, R., I., Wiemer, M., W., Miller, D., A. B., Harris Jr., J., S. 2004
GaInNAs(Sb) long wavelength communications lasers Harris, J., S., S., J., S., M., R., Bank, H., A., Wistey 2004
Electrically-reconfigurable integrated photonic switches Fidaner, O., Demir, H., V., Sabnis, V., A., Harris Jr., J., S. 2004
The temperature sensitivity of GaAs-based 1.5 µm GaInNAsSb lasers Bank, S., R., Goddard, L., L., Wistey, M., A., Yuen, H., B., Harris Jr., J., S. 2004
Measurements of intrinsic properties of high power CW single quantum well GaInNAsSb/GaAs lasers at 1.5 µm Goddard, L., L., Bank, S., R., Wistey, M., A., Yuen, H., B., Harris Jr., J., S. 2004
GaInNAs and GaInNAsSb Long Wavelength Lasers, Chapter Physics and Applications of Dilute Nitrides Harris Jr., J., S. edited by Buyanova, I., Chen, W. Taylor and Francis, London, U. K.. 2004: 395-433
Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches IEEE J. Quantum Electron. Ma, K., Urata, R., Miller, D., A. B., Harris, J., S. 2004; 6 (40): 800-5
GaInNAs(Sb) vertical-cavity surface-emitting lasers at 1.460 µm J. Vac. Sci. Technol. B Wistey, M., A., Bank, S., R., Yuen, H., B., Goddard, L., L., Harris, J., S. 2004; 3 (22): 1562-64
Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1.5 µm Electron. Lett. Harris, J., S., Gollub, D., Kamp, M., Forchel, A., Seufert, J., Bank, S., R. 2004; 23 (40): 1487-8
Comparison of GaNAsSb and GaNAs as Quantum Well Barriers for GaInNAsSb Optoelectronic Devices Operating at 1.3-1.55 µm J. Appl. Phys. Yuen, H., B., Bank, S., R., Wistey, M., A., Harris Jr., J., S., Moto, A. 2004; 11 (96): 6375-81
Structural characterization of molecular beam epitaxy grown GaInNAs and GaInNAsSb quantum wells by transmission electron microscopy Gugov, T., Wistey, M., Yuen, H., Bank, S., Harris Jr., J., S. 2004
Novel planarization and passivation in the integration of III-V semiconductor devices Zheng, J., F., Hanberg, P., J., Demir, H., V., Sabnis, V., A., Fidaner, O., Harris Jr., J., S. 2004
Electroabsorption of GaInNAs and GaInNAsSb quantum wells at 1300 and 1550 nm Lordi, V., Yuen, H., B., Bank, S., R., Wistey, M., A., Harris Jr., J., S. 2004
The Use of Transmission Electron Microscopy (TEM) in the Characterization of GaInNAs(Sb) Quantum Well Structures Grown by MBE J. Vac. Sci. Technol. B Gugov, T., Gambin, V., Wistey, M., Yuen, H., Bank, S., Harris Jr., J., S. 2004; 3 (22): 1588-92
Multispectral operation of self-assembled InGaAs quantum-dot infrared photodetectors Appl. Phys. Lett. Kim, S., M., Harris, J., S. 2004; 18 (85): 4154-56
Reduced mono-molecular recombination in GaInNAsSb/GaAs lasers at 1.5 µm Goddard, L., L., Bank, S., R., Wistey, M., S., Yuen, H., B., Bae, H., P., Harris Jr., J., S. 2004
Laser background characterization in a monolithically integrated bio-fluorescence sensor Harris, J., S., Thrush, E., Levi, O., Cook, L., J., Deich, J., Smith, S., J 2004
Tightly confining AlGaAs waveguides and microcavities for optical frequency conversion INTEGRATED OPTICS: DEVICES, MATERIALS, AND TECHNOLOGIES VIII Scaccabarozzi, L., Wang, Z., Yu, X. J., Lau, W. T., Yanik, M. F., Fan, S. H., Fejer, M. M., Harris, J. S. 2004; 5355: 111-119
View details for DOI 10.1117/12.532124

View details for Web of Science ID 000222345000011
Scalable wavelength-converting crossbar switches. IEEE Photon. Techn. Lett. Demir, H., V., Sabnis, V., A., Zheng, J., F., Fidaner, O., Harris Jr., J., S., B.Miller, D., A. 2004; 10 (16): 2305-7
Quantum-confined Stark effect of GaInNAs(Sb) quantum wells at 1300-1600 nm Appl. Phys. Lett. Lordi, V., Yuen, H., B., Bank, S., R., Harris, J., S. 2004; 6 (85): 902-4
Orbital effects of in-plane magnetic fields probed by mesoscopic conductance fluctuations Phys. Rev. B Zumbuhl, D., M., Miller, J., B., Marcus, C., M., Fal'ko, V., I., Jungwirth, T., Harris, J., S. 2004; 12 (69): 121305
Optically-controlled electroabsorption modulators for unconstrained wavelength conversion Appl. Phys. Lett. Sabnis, V., A., Demir, H., V., Fidaner, O., Harris Jr., J., S., Miller, D., A. B., Zheng, J., F. 2004; 4 (84): 469-471
Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy Appl. Phys. Lett. Ramsteiner, M., Jiang, D., S., Harris, J., S., Ploog, K., H. 2004; 11 (84): 1859-61
Fabrication and characterization of a carbon nanotube microelectrode array for retinal prostheses Investigative Ophthalmology & Visual Science 45 Wang, K., Dai, H., Leng, T., Mehenti, N., Z., Harris, J., S., Fishman, H., A. 2004; suppl.2 (45): U379
The role and suppression of carrier leakage in 1.5 µm GaInNAsSb/GaAs lasers M., S., R., H., A., Wistey, L., B., Yuen, J., L., Goddard, Harris, S. 2004
Progress towards high power 1.5 µm GaInNAsSb/GaAs lasers for Raman amplifiers Bank, S., R., Wistey, M., A., Yuen, H., B., Goddard, L., L., Harris Jr., J., S. 2004
Photodiode-driven quantum-well modulators for C-band wavelength conversion and broadcasting Demir, H., V., Fidaner, O., Sabnis, V., A., Harris, J., S., Miller, D., A. B., Zheng, J., F. 2004
Novel electrically controlled rapidly wavelength selective photodetection using MSMs Chen, R., Miller, D., A. B., Ma, K., Harris Jr., J., S. 2004
Multi-spectral operation of InGaAs quantum dot infrared photodetectors and infrared sensors applications Kim, S., Harris Jr., J., S. 2004
GaInNAsSb/GaNAs VCSELs at 1.46 µm Wistey, M., A., Bank, S., R., Yuen, H., B., Goddard, L., L., Harris Jr., J., S. 2004
MBE Growth and Characterization of Long Wavelength Dilute Nitride III-V Alloys Dilute Nitride Materials and Devices Harris Jr., J., S. edited by Henini, M. Elsevier, Amsterdam, The Netherlands. 2004: 502-578
Long-Wavelength Dilute Nitride-Antimonide Lasers Dilute Nitride Materials and Devices Harris Jr., J., S. edited by Henini, M. Elsevier, Amsterdam, The Netherlands. 2004: 1-92
Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2.04 µm J. Vac. Sci. Technol. B Fu, J., X., Bank, S., R., Wistey, M., A, Yuen, H., B., Harris, J., S. 2004; 3 (22): 1463-67
Single-phase growth studies of GaP on Si by solid-source MBE J. Vac. Sci. Technol. B Yu, X., Kuo, P., S., Ma, K., Levi, O., Fejer, M., M., Harris Jr., J., S. 2004; 3 (22): 1450-54
Multicolor InGaAs quantum-dot infrared photodetectors IEEE Photon. Technol. Lett. Kim, S., M., Harris, J., S. 2004; 11 (16): 2538-40
Structural characterization of molecular beam epitaxy grown GaInNAs and GaInNAsSb quantum wells by transmission electron microscopy NEW MATERIALS FOR MICROPHOTONICS Gugov, T., Wistey, M., Yuen, H., Bank, S., Harris, J. S. 2004; 817: 267-272
View details for Web of Science ID 000224428100040
Integrated bio-fluorescence sensor JOURNAL OF CHROMATOGRAPHY A Thrush, E., Levi, O., Ha, W., Wang, K., Smith, S. J., Harris, J. S. 2003; 1013 (1-2): 103-110
Abstract

Due to the recent explosion in optoelectronics for telecommunication applications, novel optoelectronic sensing structures can now be realized. In this work, we explore the integration of optoelectronic components towards miniature and portable fluorescence sensors. The integration of these micro-fabricated sensors with microfluidics and capillary networks may reduce the cost and complexity of current research instruments and open up a world of new applications in portable biological analysis systems. A novel optoelectronic design that capitalizes on current vertical-cavity surface-emitting laser (VCSEL) technology is explored. Specifically, VCSELs, optical emission filters and PIN photodetectors are fabricated as part of a monolithically integrated near-infrared fluorescence detection system. High-performance lasers and photodetectors have been characterized and integrated to form a complete sensor. Experimental results show that sensor sensitivity is limited by laser background. The laser background is caused by spontaneous emission emitted from the side of the VCSEL excitation source. Laser background will limit sensitivity in most integrated sensing designs due to locating excitation sources and photodetectors in such close proximity, and methods are proposed to reduce the laser background in such designs so that practical fluorescent detection limits can be achieved.

View details for DOI 10.1016/S0021-9673(03)01361-X

View details for Web of Science ID 000185656900012

View details for PubMedID 14604112
Nearest-neighbor configuration in (GaIn)(NAs) probed by X-ray absorption spectroscopy PHYSICAL REVIEW LETTERS Lordi, V., Gambin, V., Friedrich, S., Funk, T., Takizawa, T., Uno, K., Harris, J. S. 2003; 90 (14)
Abstract

Ga(1-x)In(x)N(y)As(1-y) is a promising material system for the fabrication of inexpensive "last-mile" optoelectronic components. However, details of its atomic arrangement and the relationship to observed optical properties is not fully known. Particularly, a blueshift of emission wavelength is observed after annealing. In this work, we use x-ray absorption fine structure to study the chemical environment around N atoms in the material before and after annealing. We find that as-grown molecular beam epitaxy material consists of a nearly random distribution of atoms, while postannealed material shows segregation of In toward N. Ab initio simulations show that this short-range ordering creates a more thermodynamically stable alloy and is responsible for blueshifting the emission.

View details for DOI 10.1103/PhysRevLett.90.145505

View details for Web of Science ID 000182320100032

View details for PubMedID 12731929
Heavy arsenic doping of silicon by molecular beam epitaxy Liu, X., Tang, Q., Kamins, T. I., Harris, J. S. ELSEVIER SCIENCE BV. 2003: 651-656
View details for Web of Science ID 000182179800121
Nucleation of Ti-catalyzed self-assembled kinked Si nanowires grown by gas source MBE Tang, Q., Liu, X., Kamins, T. I., Solomon, G. S., Harris, J. S. ELSEVIER SCIENCE BV. 2003: 662-665
View details for Web of Science ID 000182179800123
Improved dispersion relations for GaAs and applications to nonlinear optics J. Appl. Phys. Harris, J., S., Skauli, T., Kuo, P., S., L.Vodopyanov, K., Pinguet, T., J., Levi, O. 2003; 10 (94): 6447-55
Nearest-neighbor configuration in (GaIn)(NAs) probed by x-ray absorption spectroscopy Phys. Rev. Lett. Harris, J., S., Lordi, V., Gambin, V., Friedrich, S., Funk, T., Takizawa, T. 2003; 14 (90): 145505
High throughput integration of optoeletronics devices for biochip fluorescent detection SPIE-Photonics West, 4982, Microfludics, BioMEMS, and Medical Microsystems Thrush, E., Levi, O., Wang, K., Wistey, M., A., Harris Jr., J., S., Smith, S., J. 2003; 4982: 162-169
1.3~1.55 µm GaInNAsSb lasers Acta Optica Sinica Harris, J., S. 2003; suppl., no.1 (23): 313-14
Standing-wave microspectrometer for multiple fluorescence detection Harris, J., S., Bhalotra, S., R., Kung, H., L., Fu, J., Helman, N., C., Levi, O. 2003
Novel, optically-controlled optical switch based on intimate integration of a surface-normal photodiode and waveguide electroabsorption modulator for wavelength conversion Demir, H., V., Sabnis, V., A., Fidaner, O., Latif, S., Harris Jr., J., S., Miller, D., A. B. 2003
Long wavelength GaInNAs(Sb) in-line fiber photodetector on GaAs Yang, H., Khalili, A., Wistey, M., Bank, S., Yuen, H., Harris, J. 2003
Integrated semiconductor fluorescence sensor for portable bio-medical diagnostics Harris, J., S., Thrush, E., Levi, O., Ha, W., Kurtz, A., Hwang, J. 2003
Low-threshold CW GaInNAsSb/GaAs laser at 1.49 um Electron. Lett. Bank, S., Wistey, M., Yuen, H., Goddard, L., Ha, W., Harris Jr, J., S. 2003; 20 (39): 1445-6
High intensity 1.3 – 1.6 mm luminescence and structural changes on anneal from MBE grown (Ga, In)(N, As, Sb) J. Crystal Growth Harris, J., S., Gambin, V., Lordi, V., Ha, W., Wistey, M., Volz, K. 2003; 1-4 (251): 408-411
Low Temperature Growth of GaAs on Si Substrates for Ultra-fast Photoconductive Switches Ma, K., Urata, R., Miller, D., A. B., Harris Jr., James, S. 2003
S. R. Bank, M.A. Wistey, H. B. Yuen, L.L. Goddard, J. S. Harris, “Low threshold, CW, room temperature 1.49 µm GaAs-based lasers, Bank, S., R., Wistey, M., A., Yuen, H., B., Goddard, L.L., Harris Jr., J., S. 2003
A 100Gs/s Photoelectronic A/D converter Harris, J., S., Ioakeimidi, K., Leheny, R., Gradinaru, S., Ma, K., Aldana, R. 2003
1.5µm GaInNAs(Sb) lasers grown on GaAs by MBE J. Crystal Growth Harris, J., S., Bank, S., Ha, W., Gambin, V., Wistey, M., Yuen, H. 2003; 1-4 (251): 367-371
Laser Background Rejection Optimization in Integrated Optoelectronic Fluorescence Sensor Harris, J., S., Thrush, E., Levi, O., Ha, W., Carey, G., Cook, L., J. 2003
Template design and fabrication for low-loss orientation-patterned nonlinear AlGaAs waveguides pumped at 1.55 um J. Crystal Growth Yu, X., Scaccabarozzi, L., Levi, O., Pinguet, T., J., Fejer, M., M., Harris Jr., J., S. 2003; 251: 794-799
Optically-switched dual-diode electroabsorption modulators Integrated Photonics Research, OSA Technical Digest, Optical Society of America, Washington, DC Sabnis, V., A., Demir, H., V., Fidaner, O., Harris Jr., J., S., Miller, D., A. B., Zheng, J., F. 2003: 12-14
Optical Detection of Hot-Electron Spin Injection into GaAs from a Magnetic Tunnel Transistor Source Virtual J. Nanoscale Science & Techn. Harris, J., S., Jiang, X., Wang, R., van Dijken, S., Shelby, R., Macfarlane, R. 2003; 1 (8)
Optical Detection of Hot-Electron Spin Injection into GaAs from a Magnetic Tunnel Transistor Source Phys. Rev. Lett. Harris, J., S., Jiang, X., Wang, R., van Dijken, S., Shelby, R., Macfarlane, R. 2003; 90: 256603
Monolithic, GaInNAsSb VCSELs at 1.46 µm on GaAs by MBE Electron. Lett. Wistey, M., A., Bank, S., R., Yuen, H., B., Goddard, L., L., Harris, J., S. 2003; 25 (39): 1822-3
GaInNAsSb long wavelength lasers on GaAs Harris Jr., J., S. 2003
Standing-wave microsensor for adaptive analysis of spectral coherence Harris, J., S., Bhalotra, S., R., Kung, H., L., Fu, J., Helman, N., C., Levi, O. 2003
GaInNAsSb based long-wavelength lasers Harris Jr., J., S. 2003
Photonic A/D conversion using low-temperature-grown GaAs MSM switches integrated with Si-CMOS IEEE J. Lightwave Techn. Harris, J., S., Urata, R., Nathawad, Y., L., Takahashi, R., Ma, K., Miller, D., A. B. 2003; 12 (21): 3104-15
Twinning in TiSi2-island catalyzed Si nanowires grown by gas-source molecular-beam epitaxy APPLIED PHYSICS LETTERS Tang, Q., Liu, X., Kamins, T. I., Solomon, G. S., Harris, J. S. 2002; 81 (13): 2451-2453
View details for DOI 10.1063/1.1509096

View details for Web of Science ID 000178037600045
Chemically vapor deposited Si nanowires nucleated by self-assembled Ti islands on patterned and unpatterned Si substrates Kamins, T. I., Williams, R. S., Hesjedal, T., Harris, J. S. ELSEVIER SCIENCE BV. 2002: 995-998
View details for Web of Science ID 000176869100210
Ga(A,N) layers in the dilute N limit studied by depth-resolved capacitance spectroscopy Appl. Phys. Lett. Krispin, P., Gambin, V., Harris, J., S., Ploog, K., H. 2002; 21 (81): 3987-3989
A 1.5 µm GaInNAs(Sb) laser grown on GaAs by MBE Harris, J., S., Ha, W., Gambin, V., Bank, S., Wistey, M., Yuen, H. 2002
Measurement of nonlinear coefficient of orientation-patterned GaAs and demonstration of highly efficient second harmonic generation Opt. Lett. Harris, J., S., Skauli, T., Vodopyanov, K., L., Pinguet, T., J., Schober, A., Levi, O. 2002; 27: 628-630
Difference-frequency generation of 8µm radiation in orientation-patterned GaAs crystal Opt. Lett. Levi, O., Pinguet, T., J., Skauli, T., Eyres, L., A., Parameswaran, K., R., Harris Jr., J., S. 2002; 23 (27): 2091—2093
Integrated semiconductor fluorescent detection system for biochip and biomedical applications Thrush, E., Levi, O., Wang, K., Wistey, M., Harris, J., S., Smith, S., J. 2002
Standing-wave Fourier transform spectrometer based on integrated MEMS mirror and thin-film photodetector IEEE J. Select. Topics Quantum Elect. Kung, H., L., Bhalotra, S., R., Mansell, J., D., Miller, D., A. B., Harris, J., S. 2002; 1 (8): 98-105
Electron traps in MBE Ga(A,N) layers grown by molecular beam epitaxy Appl. Phys. Lett. Krispin, P., Spruytte, S., G., Harris, J., S., Ploog, K., H. 2002; 12 (80): 2120-2122
Ultrafast optoelectronic sample-and-hold using low-temperature-grown GaAs MSM IEEE Photon. Techn. Lett. Urata, R., Takahashi, R., Sabnis, V., A., Miller, D., A. B., Harris, J., S. 2002; 5 (15): 724-6
Long-wavelength GaInNAs(Sb) lasers on GaAs IEEE J. Quant. Electron. Harris, J., S., Ha, W., Gambin, V., Bank, S., Wistey, M., Yuen, H. 2002; 38: 1260 –1267
GaInNAsSb for 1.3-1.6µm long wavelength lasers grown by molecular beam epitaxy IEEE J. Select Topics Quant. Electron Harris, J., S., Gambin, V., Ha, W., Wistey, M., Bank, S., Yuen, H. 2002; 4 (8): 795-800
Thermo-optic characterization of GaAs for quasi-phase-matched nonlinear-optical applications Harris, J., S., Skauli, T., Kuo, P., S., Levi, O., Vodopyanov, K., L., Pinguet, T. 2002
Integrated semiconductor fluorescent detection system for biochip and biomedical applications Thrush, E., Levi, O., Wang, K., Harris Jr., J., S., Smith, S., J. 2002
Examination of N incorporation into GaInNAs Lordi, V., Gambin, V., Ha, W., Bank, S., Harris, J. 2002
Optomechanical Model of Surface Micromachined Tunable Optoelectonic Devices IEEE J. Select. Topics Quantum Elect. Lin, C., C., Martin, W., A., Harris Jr., J., S. 2002; 1 (8): 80-87
Long Wavelength GaInNAsSb/GaNAsSb Multiple Quantum Well Lasers Electron. Lett. Harris, J., S., Ha, W., Gambin, V., Wistey, M., Bank, S., Yuen, H. 2002: 277-278
Ultrafast sampling using low temperature grown GaAs MSM switches integrated with CMOS amplifier for photonic A/D conversion Urata, R., Nathawad, L., Y., Ma, K., Takabashi, R., Miller, D., A. B., Wooley, B., A. 2002
Ti-Island-Catalyzed Si Nanowire Growth by Gas-Source MBE: Morphology and Twinning Tang, Q., Liu, X., Kamins, T., I., Solomon, G., S., Harris Jr., J., S. 2002
Differential optical remoting of ultrafast charge packets using self-linearized modulation Chin, H., Keeler, G., A., Helman, N., C., Wistey, M., Miller, D., A. B., Harris Jr., J., S. 2002
Continuously tunable Mid-IR Frequency Generation in Orientation Patterned GaAs Harris, J., S., Levi, O., Skauli, T., Pinguet, T., Vodopyanov, K., L., Kuo, P., S. 2002
Long Wavelength GaInNAs(Sb) Lasers on GaAs Ha, W., Harris, J., S. 2002
Highly efficient SHG in all-epitaxial quasi-phase-matched GaAs Harris, J., S., Vodopyanov, K., L., Skauli, T., Pinguet, T., J., Schober, A., Levi, O. 2002
High Efficiency Multiple Quantum Well GaInNAs/GaNAs Ridge-Waveguide Diode Lasers Ha, W., Gambin, V., Bank, S., Wistey, M., Kim, S., Harris Jr., J., S. 2002
Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4µm IEEE Photon. Technol. Lett. Ha, W., Gambin, V., Wistey, M., Bank, S., Kim, S., Harris Jr., J., S. 2002; 5 (14): 591-593
GaInNAs long wavelength lasers: Progress and Challenges Semicond. Sci. Techn. Harris Jr., J., S. 2002; 8 (17): 880-891
GaInNAs, a new material for long wavelength VCSELs JOURNAL OF THE KOREAN PHYSICAL SOCIETY Harris, J. S. 2001; 39: S306-S312
View details for Web of Science ID 000172968700073
Decoherence in nearly isolated quantum dots PHYSICAL REVIEW LETTERS Folk, J. A., Marcus, C. M., Harris, J. S. 2001; 87 (20)
Abstract

Decoherence in nearly isolated GaAs quantum dots is investigated using the change in the average Coulomb blockade peak height when time-reversal symmetry is broken. The normalized change in the average peak height approaches the predicted universal value of 1/4 at temperatures well below the single-particle level spacing, T < Delta, but is greatly suppressed for T > Delta, suggesting that inelastic scattering or other dephasing mechanisms dominate in this regime.

View details for DOI 10.1103/PhysRevLett.87.206802

View details for Web of Science ID 000172182900043

View details for PubMedID 11690504
All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion APPLIED PHYSICS LETTERS Eyres, L. A., Tourreau, P. J., Pinguet, T. J., Ebert, C. B., Harris, J. S., Fejer, M. M., Becouarn, L., Gerard, B., Lallier, E. 2001; 79 (7): 904-906
View details for Web of Science ID 000170277500004
Spin degeneracy and conductance fluctuations in open quantum dots PHYSICAL REVIEW LETTERS Folk, J. A., Patel, S. R., Birnbaum, K. M., Marcus, C. M., Duruoz, C. I., Harris, J. S. 2001; 86 (10): 2102-2105
Abstract

The dependence of conductance fluctuations on parallel magnetic field is used as a probe of spin degeneracy in open GaAs quantum dots. The variance of fluctuations at high parallel field is reduced from the low-field variance (with broken time-reversal symmetry) by factors ranging from roughly 2 in a 1 microm (2) dot to greater than 4 in 8 microm (2) dots. The factor of 2 is expected for Zeeman splitting of spin-degenerate channels. A possible explanation for the larger suppression based on field-dependent spin-orbit scattering is proposed.

View details for Web of Science ID 000167259900048

View details for PubMedID 11289865
Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms JOURNAL OF APPLIED PHYSICS Kamins, T. I., Williams, R. S., Basile, D. P., Hesjedal, T., Harris, J. S. 2001; 89 (2): 1008-1016
View details for Web of Science ID 000166144400029
Use of angle resolved X-Ray Photoelectron Spectroscopy for determination of depth and thickness of the different layers in a layer structure J. Vac. Sci. Technol. Spruytte, S., Coldren, C., Harris, J., Pantelidis, D., Lee, H., J., Bravman, J. 2001; 2 (19): 603-608
High-speed, dual-function vertical cavity multiple quantum well modulators and photodetectors for optical interconnects Optical Engr. Liu, H., Lin, C., C., Harris, J., S. 2001; 7 (40): 1186-1191
GaInNAs long wavelength vertical cavity lasers Technical Digest. CLEO/Pacific Rim Larson, M., C., Coldren, C., C., Spruytte, S., G., Petersen, H., E., Garrett, H., E, Harris, J., S. 2001: 594-5
Opto-mechanical model of surface micromachined tunable optoelectronic devices Lin, C., C., Martin, W., A., Harris Jr., J., S. 2001
Mid-infrared generation by difference frequency mixing in orientation-patterned GaAs Harris, J., S., Levi, O., Pinguet, T., Skauli, T., Eyres, L., A., Scaccabarozzi, L. 2001
Nitrogen incorporation in Group III-Nitride Arsenide materials grown by elemental source MBE J. Crystal Growth Harris, J., S., Spruytte, S., G., Larson, M., C., Wampler, W., Coldren, C., W., Petersen, E., H 2001; 227: 506-515
Incorporation of Nitrogen in Nitride-Arsenides: Origin of improved Luminescence Efficiency after Anneal J. Appl. Phys. Harris, J., S., Spruytte, S., Wampler, W., Krispin, P., Coldren, C., Larson, M. 2001; 8 (89): 4401-4406
Deep-level defects in MBE grown Ga(A,N) layers Physica B Krispin, P., Spruytte, S., G., Harris, J., S., Ploog, K., H. 2001; 308: 870-873
Admittance dispersion of n-type GaAs/Ga(As, N)/GaAs heterostructures grown by molecular beam epitaxy J. Appl. Phys. Krispin, P., Spruytte, S., G., Harris, J., S., Ploog, K., H. 2001; 5 (90): 2405-2410
High-speed sample and hold using low-temperature-grown GaAs MSM switches for photonic A/D conversion Urata, R., Takahashi, R., Sabnis, V., A., Miller, D., A. B., Harris Jr., J., S. 2001
Ultrafast differential sample and hold using low-temperature-grown GaAs MSM for photonic A/D conversion IEEE Photon. Technol. Lett. Urata, R., Takahashi, R., Sabnis, V., A., Miller, D., A. B., Harris, J., S. 2001; 7 (13): 717-719
Widely Tunable Micromachined Optical Filter with Adjustable Tuning Characteristics Lin, C., C., Fu, J., Harris Jr., J., S. 2001
Tunable mid-IR generation by difference-frequency mixing in orientation-patterned GaAs Harris, J., S., Levi, O., Skauli, T., Pinguet, T., J., Eyres, L., A., Scaccabarozzi, L. 2001
GaInNAs material properties for long wavelength opto-electronic devices Gambin, V., Ha, W., Wistey, M., Kim, S., Harris Jr., J., S. 2001
Characterization of 0.5 mm Thick films of orientation-patterned GaAs for nonlinear optical applications Harris, J., S., Pinguet, T., Skauli, T., Levi, O., Vodopyanov, K., Eyres, L., A. 2001
Theoretical predictions of unstable two-phase regions in wurtzite group-III-nitride-based ternary and quaternary material systems using modified valence force field model J. Appl. Phys. Takayama, T., Yuri, M., Itoh, K., Baba, T., Harris Jr., J., S. 2001; 5 (90): 2358-2369
Origin and annealing of deep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy J. Appl. Phys. Krispin, P., Spruytte, S., G., Harris, J., S., Ploog, K., H. 2001; 11 (89): 6294-6301
Second harmonic generation in thick orientation-patterned GaAs Harris, J., S., Skauli, T., Vodopyanov, K., Pinguet, T., W., Levi, O., Eyres, L., A. 2001
Long wavelength GaInNAs ridge waveguide lasers with GaNAs barriers Ha, W., Gambin, V., Wistey, M., Bank, S., Kim, S., Harris Jr., J., S. 2001
1.3 micron opto-electronic devices on GaAs using group III-Nitride-Arsenides Spruytte, S., G., Wistey, M., A., Larson, M., C., Coldren, C., W., Garrett, H., Harris, J., S. 2001
Decoherence in nearly isolated quantum dots Phys. Rev. Lett. Folk, J., A., Marcus, C., M., Harris, J., S. 2001; 20 (87): 6802-6804
Analysis of phase-separation region in wurtzite group III nitride quaternary material system using modified valence force field model J. Crystal Growth Takayama, T., Yuri, M., Itoh, K., Baba, T., Harris, J., S. 2001; 1-2 (222): 29-37
Second harmonic generation in orientation-patterned AlGaAs waveguides pumped at 1.55 microns Harris, J., S., Pinguet, T., Scaccabarozzi, L., Levi, O., Skauli, T., Eyres, L., A. 2001
Observation of Wavelength-Converting Optical Switching at 2.5 GHz in a Surface Normal Illuminated Waveguide Sabnis, V., A., Demir, H., V., Yairi, M., Miller, D., A.B., Harris Jr., J., S. 2001
High efficiency Multiple Quantum Well GaInNAs/GaNAs Ridge-Waveguide Laser diode operating out to 1.4µm Ha, W., Gambin, V., Wistey, M., Kim, S., Harris Jr., J. 2001
Use of a dielectric stack as a one-dimensional photonic crystal for wavelength demultiplexing by beam shifting OPTICS LETTERS Nelson, B. E., Gerken, M., Miller, D. A., Piestun, R., Lin, C. C., Harris, J. S. 2000; 25 (20): 1502-1504
Abstract

We demonstrate the use of a 30-period dielectric stack structure as a highly dispersive device to spatially separate two beams with a 4-nm wavelength difference by more than their beam width. Unlike previous devices, our structure is simple to fabricate and relatively compact. We discuss possible applications of our device within wavelength-division multiplexing systems.

View details for Web of Science ID 000089834900004

View details for PubMedID 18066259
Narrow-band light emission in semiconductor-fibre asymmetric waveguide coupler ELECTRONICS LETTERS Mao, E., Yankelevich, D. R., Lin, C. C., Solgaard, O., Knoesen, A., Harris, J. S. 2000; 36 (16): 1378-1379
View details for Web of Science ID 000088762800031
Basic properties of GaAs oxide generated by scanning probe microscope tip-induced nano-oxidation process JOURNAL OF APPLIED PHYSICS Okada, Y., Iuchi, Y., Kawabe, M., Harris, J. S. 2000; 88 (2): 1136-1140
View details for Web of Science ID 000087889800083
Wavelength-selective semiconductor in-line fibre photodetectors ELECTRONICS LETTERS Mao, E., Yankelevich, D. R., Lin, C. C., Solgaard, O., Knoesen, A., Harris, J. S. 2000; 36 (6): 515-516
View details for Web of Science ID 000086381000023
Electrical depth profile of p-type GaAs/Ga(As, N)/GaAs heterostructures determined by capacitance-voltage measurements J. Appl. Phys. Krispin, P., Spruytte, S., G., Harris, J., S., Ploog, K., H. 2000; 7 (88): 4153-4158
Wavelength monitor based on two single-quantum-well absorbers sampling a standing wave pattern Appl. Phys. Lett. Kung, H., L., Miller, D., A. B., Atanackovic, P., Lin, C., C., Harris Jr., J., S., Carraresi, L. 2000; 22 (76): 3185-3187
Thick (200 mu m) orientation-patterned GaAs for bulk quasi-phase-matched nonlinear frequency conversion Tech. Digest CLEO, TOPS, San Francisco, CA Eyres, L., A., Tourreau, P., J., Pinguet, T., J., Ebert, C., B., Harris, J., S., Fejer, M., M. 2000; 39
In-line fiber evanescent field electrooptic modulators J. Nonlinear Optical Phys. Materials Arft, G., Yankelevich, D., R., Knoesen, A., Mao, E., Harris Jr., J., S. 2000; 1 (9): 79-94
Experimental and simulated results of room temperature single electron transistor formed by atomic force microscopy nano-oxidation process Jpn. J. Appl. Phys. Gotoh, Y., Matsumoto, K., Bubanja, B., Vazquez, F., Maeda, T., Harris, J., S. 2000; 4B (39): 2334-2337
Analysis of unstable two-phase region in wurtzite Group III nitride ternary alloy using modified valence force field model Jpn. J. Appl. Phys. Takayama, T., Yuri, M., Itoh, K., Baba, T., Harris, J., S. 2000; 9A (39): 5057-5062
1200nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions Electron. Lett. Coldren, C., W., Larson, M., C., Spruytte, S., G., Harris Jr., J., S. 2000; 11 (36): 951-952
MBE growth of nitride-arsenide materials for long wavelength opto-electronics Spruytte, S. G., Coldren, C. W., Marshall, A. F., Larson, M. C., Harris, J. S. MATERIALS RESEARCH SOC. 2000: U407-U412
View details for Web of Science ID 000090103600067
All-epitaxial orientation-patterned GaAs for nonlinear optical frequency conversion Eyres, L., A., Tourreau, P., J., Pinguet, T., J., Ebert, C., B., Harris, J., S., Fejer, M., M. 2000
Quasi-phasematched frequency conversion in thick all-epitaxial, orientation-patterned GaAs films Eyres, L., A., Tourreau, P., J., Pinguet, T., J., Ebert, C., B., Harris, J., S., Fejer, M., M. 2000
Modeling of MEMS tunable optoelectronic device mirror Lin, C., C., Martin, W., A., Harris Jr., J., S., Chan, E. 2000
Wavelength demultiplexing by beam shifting using a dielectric stack as a one-dimensional photonic crystal Nelson, B., E., Gerken, M., Miller, D., A. B., Piestun, R., Lin, C., C., Harris Jr., J., S. 2000
Molecular beam epitaxial growth of group III-nitride-arsenides for long wavelength optoelectronics Spruytte, S., G., Larson, M., C., Wampler, W., Coldren, C., W., Harris Jr., J., S. 2000
Theoretical analysis of unstable two-phase region and microscopic structure in wurtzite and zinc-blende InGaN using modified valence force field model J. Appl. Phys. Takayama, T., Yuri, M., Itoh, K., Baba, T., Harris Jr., J., S. 2000; 2 (88): 1104-1110
Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers IEEE Photon. Techn.Lett. Larson, M., C., Coldren, C., W., Spruytte, S., G., Petersen, H., E., Harris, J., S. 2000; 12 (12): 1598-1600
Compositional Evolution and Structural Changes during Anneal of Group III-Nitride-arsenide Alloys Spruytte, S., G., Coldren, C., W., Marshall, A., F., Harris, J., S. 2000
Vertical Cavity Modulator for Optical Interconnection and its High Speed Performance Liu, H., Lin, C., C., Harris Jr., J., S. 2000
A multiple-quantum-well GaAs/AlGaAs in-line fiber intensity modulator Mao, E., Yankelevich, D., R., Coldren, C., W., Solgaard, O., Knoesen, A., Harris Jr., J., S. 2000
Tunable long wavelength vertical cavity lasers: the engine of next generation optical networks IEEE/LEOS Special Millenium Issue, IEEE J. Sel. Top. Quan. Elect. Harris Jr., J., S. 2000; 6: 1145-1160
Room-temperature single-electron memory made by pulse-mode atomic force microscopy nano oxidation process on atomically flat alpha-alumina substrate Appl. Phys. Lett. Matsumoto, K., Gotoh, Y., Maeda, T., Dagata, J., A., Harris Jr., J., S. 2000; 2 (76): 239-241
Low threshold current continuous-wave GaInNAs/GaAs VCSELs Larson, M., C., Coldren, C., W., Spruytte, S., G., Petersen, H., E., Harris, J., S. 2000
Narrow-band light emission in a semiconductor-fiber asymmetric waveguide coupler Mao, E., Lin, C., C., Solgaard, O., Harris, J., S. 2000
Incorporation of nitrogen in group III-nitrides-arsenides grown by molecular beam epitaxy (MBE) Spruytte, S., G., Coldren, C., W., Larson, M., C., Harris, J., S. 2000
Demonstration of an optoelectronic dual-diode optically controlled optical gate with a 20 picosecond repetition period Yairi, M., B., Demir, H., V., Coldren, C., W., Harris, J., S., Miller, D., A. B. 2000
Pulsed 25-108 degrees C operation of GaInNAs multiple quantum well vertical cavity lasers Tech. Digest CLEO , TOPS, San Francisco, CA Coldren, C., W., Larson, M., C., Spruytte, S., G., Garrett, H., E., Harris Jr., J., S. 2000; 39: 229-230
Optical gain and collector current characteristics of resonant-cavity phototransistors Appl. Phys. Lett. Lin, C., C., Martin, W., Harris, J., S., Sugihwo, F. 2000; 9 (76): 1188-1190
Group III nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy J. Vac. Sci. Technol. B Coldren, C., W., Spruytte, S., G., Harris Jr., J., S., Larson, M., C. 2000; 3 (18): 1480-1483
Frequency locking of micromachined tunable VCSELs to external wavelength selective filters Digest LEOS Summer Topical Meeting Optical Sensing in Semiconductor Manufacturing, Aventura, FL Martin, W., A, Lin, C., C., Sugihwo, F., Harris Jr., J., S. 2000
Low-temperature saturation of the dephasing time and effects of microwave radiation on open quantum dots PHYSICAL REVIEW LETTERS Huibers, A. G., Folk, J. A., Patel, S. R., Marcus, C. M., Duruoz, C. I., Harris, J. S. 1999; 83 (24): 5090-5093
View details for Web of Science ID 000084152000046
Strain directed assembly of nanoparticle arrays within a semiconductor JOURNAL OF NANOPARTICLE RESEARCH Hung, C., Marshall, A. F., Kim, D., Nix, W. D., Harris, J. S., Kiehl, R. A. 1999; 1 (3): 329-347
View details for Web of Science ID 000208066900003
Size stabilization of arsenic precipitates in nonstoichiometric GaAs-based compounds APPLIED PHYSICS LETTERS Hung, C. Y., Harris, J. S., Marshall, A. F., Kiehl, R. A. 1999; 75 (7): 917-919
View details for Web of Science ID 000081928700012
Coulomb blockade fluctuations in strongly coupled quantum dots PHYSICAL REVIEW LETTERS Maurer, S. M., Patel, S. R., Marcus, C. M., Duruoz, C. I., Harris, J. S. 1999; 83 (7): 1403-1406
View details for Web of Science ID 000082066600033
High-speed, optically controlled surface-normal optical switch based on diffusive conduction APPLIED PHYSICS LETTERS Yairi, M. B., Coldren, C. W., Miller, D. A., Harris, J. S. 1999; 75 (5): 597-599
View details for Web of Science ID 000081644100001
GaAs AlGaAs multiple-quantum-well in-line fiber intensity modulator APPLIED PHYSICS LETTERS Mao, E., Coldren, C. W., Harris, J. S., Yankelevich, D. R., Solgaard, O., Knoesen, A. 1999; 75 (3): 310-312
View details for Web of Science ID 000081409000002
Optical and structural properties of epitaxial GaN films grown by pulsed laser deposition JOURNAL OF CRYSTAL GROWTH HUANG, T. F., Marshall, A., Spruytte, S., Harris, J. S. 1999; 200 (3-4): 362-367
View details for Web of Science ID 000079859800004
An AlGaAs/GaAs tunnel diode integrated with nanometer-scale atomic force microscope tip-induced oxides JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS Okada, Y., Iuchi, Y., Kawabe, M., Harris, J. S. 1999; 38 (2B): L160-L162
View details for Web of Science ID 000079486800004
Group III-nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy Coldren, C., W., Spruytte, S., G., Harris, J., S., Larson, M., C. 1999
Realization of logically labeled effective pure states for bulk quantum computation Phys. Rev. Lett. Harris, J., S., Vandersypen, L., M. K., Yannoni, C., S., Sherwood, M., H., Chuang, I., L. 1999; 83: 3085
Excess noise in sub-micron silicon FET: characterization, prediction and control Franca-Neto, L., M., Harris, J., S. 1999
Scanned potential microscopy of edge and bulk currents in the quantum Hall regime Phys. Rev B Harris, J., S., McCormick, K., L., Woodside, M., T., Huang, M., Wu, M., S., McEuen, P., L. 1999; 7 (59): 4654-4657
Vertical cavity modulator for optical interconnection and its high speed performance Liu, H., Lin, C., C., Harris Jr., J., S. 1999
Micromachined tunable optoelectronic devices for spectroscopic applications Harris Jr., J., S., Lin, C., C., Martin, W., Sugihwo, F., Larson, M., Paldus, B. 1999
GaAs/AlGaAs narrow-bandwidth in-line fiber filter Mao, E., Coldren, C., W., Harris Jr., J., S., Yankelevich, D., R., Solgaard, O., Knoesen, A. 1999
Demonstration of second harmonic generation in all-epitaxially grown orientation-patterned AlGaAs waveguides Eyres, L., A., Ebert, C., B., Tourreau, P., J., Harris, J., S., Fejer, M., M. 1999
GaAs/AlGaAs Oxide Tunnel Barriers Fabricated by Atomic Force Microscope Tip-Induced Nano-Oxidation Technique Internl. Symp. Compound Semiconductors Okada, Y., Iuchi, Kawabe, M., Harris Jr., J., S. Institute of Physics Publishing. 1999: 337-340
GaAs/AlGaAs Oxide Tunnel Barriers Fabricated by Atomic Force Microscope Tip-Induced Nano-Oxidation Technique Okada, Y., Iuchi, Y., Kawabe, M., Harris Jr., J., S. 1999
Nearest-neighbor spatial ordering of strain-induced islands using a subsurface island superlattice J. Cryst. Growth Solomon, G., S., Komarov, S., Harris Jr., J., S. 1999; 202: 1190-1193
Metal-based room-temperature operating single electron devices using scanning probe oxidation J. J. Appl. Phys. Matsumoto, K., Gotoh, Y., Maeda, T., Dagata, J., A., Harris Jr., J., S. 1999; 1B (38): 477-479
MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy J. Crystal Growth Ebert, C., B., Eyres, L., A., Fejer, M., M., Harris Jr., J., S. 1999; 202: 187-193
Room temperature single electron transistor by AFM nano-oxidation process-coincidence in experimental and theoretical results Matsumoto, K., Gotoh, Y., Maeda, T., Harris, J., S. 1999
Optically-controlled optical gate using a double diode structure Yairi, M., B., Demir, H., V., Coldren, C., W., Miller, D., A. B., Harris Jr., J., S. 1999
MBE Growth of Nitride-Arsenide Materials for long Wavelength Opto-electronics Spruytte, S., G., Coldren, C., W., Marshall, A., F., Larson, M., C., Harris, J., S. 1999
Mesoscopic Coulomb blockade in one-channel quantum dots PHYSICAL REVIEW LETTERS Cronenwett, S. M., Maurer, S. M., Patel, S. R., Marcus, C. M., Duruoz, C. I., Harris, J. S. 1998; 81 (26): 5904-5907
View details for Web of Science ID 000077760200049
Changing the electronic spectrum of a quantum dot by adding electrons PHYSICAL REVIEW LETTERS Patel, S. R., Stewart, D. R., Marcus, C. M., Gokcedag, M., Alhassid, Y., Stone, A. D., Duruoz, C. I., Harris, J. S. 1998; 81 (26): 5900-5903
View details for Web of Science ID 000077760200048
Distributions of the conductance and its parametric derivatives in quantum dots PHYSICAL REVIEW LETTERS Huibers, A. G., Patel, S. R., Marcus, C. M., Brouwer, P. W., Duruoz, C. I., Harris, J. S. 1998; 81 (9): 1917-1920
View details for Web of Science ID 000075626300042
Annealing cycle dependence of preferential arsenic precipitation in AlGaAs/GaAs layers APPLIED PHYSICS LETTERS Hung, C. Y., Harris, J. S., Marshall, A. F., Kiehl, R. A. 1998; 73 (3): 330-332
View details for Web of Science ID 000075275600018
Statistics of Coulomb blockade peak spacings PHYSICAL REVIEW LETTERS Patel, S. R., Cronenwett, S. M., Stewart, D. R., Huibers, A. G., Marcus, C. M., Duruoz, C. I., Harris, J. S., Campman, K., Gossard, A. C. 1998; 80 (20): 4522-4525
View details for Web of Science ID 000073632900041
Cavity-locked ring-down spectroscopy JOURNAL OF APPLIED PHYSICS Paldus, B. A., Harb, C. C., Spence, T. G., Wilke, B., Xie, J., Harris, J. S., Zare, R. N. 1998; 83 (8): 3991-3997
View details for Web of Science ID 000073273900006
Nanoscale oxidation of GaAs-based semiconductors using atomic force microscope JOURNAL OF APPLIED PHYSICS Okada, Y., Amano, S., Kawabe, M., Shimbo, B. N., Harris, J. S. 1998; 83 (4): 1844-1847
View details for Web of Science ID 000075257300004
Atomic force microscope nanoscale lithography for single-electron device applications COMPOUND SEMICONDUCTORS 1997 Okada, Y., Amano, S., Kawabe, M., Shimbo, B. N., Harris, J. S. 1998; 156: 577-580
View details for Web of Science ID 000074779700137
Near-Infrared Cavity Ringdown Spectroscopy of Water Vapor in an Atmospheric Flame Chem. Phys. Lett. Harris, J., S., Xie, J., Paldus, B., A., Wahl, E., H., Owano, T., G., Kruger, C., H. 1998; 5-6 (284): 387-395
AlGaAs/GaAs Tunneling Diode Integrated with nanometre-scale Oxides Patterned by Atomic Force Microscope Electron. Lett. Okada, Y., Amano, S., Iuchi, Y., Kawabe, M., Harris Jr., J., S. 1998; 34: 12, 1262-1263
Advances in CW cavity ring-down spectroscopy Technical Digest International Quantum Electronics Conference Paldus, A., Spence, T., G., Harb, C., C., Willke, B., Levenson, M., D., Harris Jr., J., S. 1998: 79
MBE growth of laterally antiphase-patterned GaAs films using thin Ge layers for waveguide mixing Eyres, A., Ebert, C., B., Fejer, M., M., Harris Jr., J., S. 1998
In-line fiber-optic filter using GaAs ARROW waveguide Mao, E., Coldren, C., Harris Jr., J., S., Yankelevich, D., Solgaard, O., Knoesen, A. 1998
Vapor Phase Epitaxy Growth of GaN on Pulsed Laser Deposited ZnO Buffer Layer J. Crys. Growth Harris, J., S., Ueda, T., Huang, T., F., Spruytte, S., Lee, H., Yuri, M. 1998; 3-4 (187): 340-346
Scanned potential microscopy of a two-dimensional electron gas Physica B McCormick, K., L., Woodside, M., T., Huang, M., McEuen, P., L., Duruöz, C., I., Harris Jr., J., S. 1998; 251: 79-83
Room Temperature Coulomb Oscillation and Memory Effect for Single Electron Memory made by Pulse-Mode AFM Nano-oxidation Process IEDM, San Francisco. Matsumoto, K., Gotoh, Y., Maeda, T., Dagata, J., A., Harris, J., S. 1998
Micromachined Tunable Vertical-Cavity Lasers as Wavelength-Selective Tunable Photodetectors Sugihwo, F., Lin, C., C., Bouteiller, J., C., Larson, M., Harris Jr., J., S. 1998
Calculation of Unstable Mixing Region in Wurtzite InGaN Harris, J., S., Takayama, T., Ueda, T., Ishida, M., Yuri, M., Itoh, K. 1998
Simultaneous Optimization of Membrane Reflectance and Tuning Voltage for Tunable Vertical Cavity Lasers Appl. Phys. Lett. Sugihwo, F., Larson, M., Harris Jr., J., S. 1998; 1 (72): 10-12
Optical Heterodyne Detection in Cavity Ring-Down Spectroscopy Chem Phys. Lett. Levenson, M., D., Paldus, B., A., Spence, T., G., Harb, C., C., Harris Jr., J., S., Zare, R., N. 1998; 290 (4-6): 335-340
Growth of epitaxial AlxGa1-xN films by pulsed laser deposition App. Phys. Lett. Huang, T., F., Harris Jr., J., S. 1998; 10 (72): 1158-1160
Increased surface ordering of InAs island arrays using a multidot column subsurface structure Komarov, S., A., Solomon, G., S., Harris Jr., J., S. 1998
High-speed quantum well optoelectronic gate based on diffusive conduction recovery Harris, J., S., Yairi, B., Coldren, C., W., Miller, D., A. B. 1998
Vertical InAs diffusion and surface ordering processes in InAs vertical quantum dot columns Physica E Solomon, G., S., Wu, W., Tucker, J., R., Harris Jr., J., S. 1998; 1-4 (2): 709-713
Two-dimensional Device Simulation for PHEMT Material and Process Control Pao, Y., C., Harris Jr., J., S. 1998
Iron Nitride Mask and Reactive Ion Etcjomg pf GaN Films J. Elec. Matls Lee, H., Harris Jr., J., S. 1998; #4 (27): 185-189
Basic Mechanisms of an Atomic Force Microscope Tip-induced Nano-oxidation Process of GaAs J. Appl. Phys. Okada, Y., Amano, S., Kawabe, M., Harris Jr., J., S. 1998; 83: 12, 7998-8001
Micromachined tunable vertical cavity lasers as wavelength selective tunable photodetectors Sugihwo, F., Lin, C., C., Bouteiller, J., C., Larson, M., Harris Jr., J., S. 1998
Low Noise Silicon RF FET Design Using Graded Doping and Stress Franca-Neto, L., M., Harris Jr., J., S. 1998
Statistics of peak spacings and widths in the quantum coulomb blockade regime Physica B Marcus, C., M., Patel, S., R., Duruöz, C., I., Harris Jr., J., S., Campman, K., Gossard, A., C. 1998; 251: 201-205
Micromachined Widely Tunable Vertical Cavity Laser Diodes J. of Microelectromechanical Systems Sugihwo, F., Larson, M., Harris Jr., J., S. 1998; 1 (7): 48-55
Bulk Spin Quantum Computation toward Large-scale Quantum Computation Dig. Tech. Papers, IEEE ISSCC Chuang, I., L., Vandersypen, L., M. K., Harris, J., S. 1998: 96-97
Broadly-tunable narrow-linewidth micromachined laser/photodetector and phototransistor Technical Digest, IEEE IEDM, San Francisco, CA Sugihwo, F., Lin, C., C., Eyres, L., A., Fejer, M., M., Harris Jr., J., S. 1998: 665
Laser diode cavity ring-down spectroscopy using acousto-optic modulator stabilization JOURNAL OF APPLIED PHYSICS Paldus, B. A., Harris, J. S., Martin, J., Xie, J., Zare, R. N. 1997; 82 (7): 3199-3204
View details for Web of Science ID A1997XY05700005
Localised impurity induced layer disordering for lithographic control of the lateral oxidation of AlAs ELECTRONICS LETTERS Massengale, A. R., Ueda, T., Harris, J. S., Tai, C. Y., Deal, M. D., Plummer, J. D., Fernandez, R. 1997; 33 (12): 1087-1089
View details for Web of Science ID 000072040800062
Growth of abrupt GaAs/Ge heterointerfaces by atomic hydrogen-assisted molecular beam epitaxy Okada, Y., Harris, J. S., SUTOH, A., Kawabe, M. ELSEVIER SCIENCE BV. 1997: 1039-1044
View details for Web of Science ID A1997XX17900064
Near-infrared wavelength intersubband transitions in high indium content InGaAs/AlAs quantum wells grown on GaAs ELECTRONICS LETTERS Sung, B., Chui, H. C., Fejer, M. M., Harris, J. S. 1997; 33 (9): 818-820
View details for Web of Science ID A1997WX45900063
Zero chirp asymmetric fabry-perot electroabsorption modulator using coupled quantum wells IEEE PHOTONICS TECHNOLOGY LETTERS Trezza, J. A., Powell, J. S., Harris, J. S. 1997; 9 (3): 330-332
View details for Web of Science ID A1997WJ31800021
Correlations between ground and excited state spectra of a quantum Dot Science (New York, N.Y.) Stewart, D. R., Sprinzak, D., Marcus, C. M., Duruoz, C. I., Harris, J. S. 1997; 278 (5344): 1784-8
Abstract

The ground and excited state spectra of a semiconductor quantum dot with successive electron occupancy were studied with linear and nonlinear magnetoconductance measurements. A direct correlation was observed between the mth excited state of the N-electron system and the ground state of the (N + m)-electron system for m up to 4. The results are consistent with a single-particle picture in which a fixed spectrum of energy levels is successively filled, except for a notable absence of spin degeneracy. Further departures from the single-particle picture due to electron-electron interaction were also observed. Magnetoconductance fluctuations of ground states show anticrossings where wave function characteristics are exchanged between adjacent levels.

View details for PubMedID 9388178
Whispering Gallery Mode Operation in Tunable Vertical Cavity Laser Structure Electron. Lett. Sugihwo, F., Larson, M., Harris Jr., J., S. 1997; 4 (33): 1467-8
Increased size uniformity through vertical quantum dot columns J. Crystal Growth Solomon, G., S., Komarov, S., Harris Jr., J., S., Yamamoto, Y. 1997; pt.2 (175): 707-712
Fabrication of Single Electron Memory on Atomically Flat a-Al2O3 Substrate made by AFM Nano-Oxidation Process International Electron Devices Meeting, Washington, DC Matsumoto, K., Gotoh, Y., Shirakashi, J. I., Maeda, T., Harris Jr., J., S. 1997: 155-157
Atom-resolved Scanning Tunneling Microscopy of Vertically Ordered InAs Quantum Dots Appl. Phys. Lett. Wu, W., Solomon, G., S., Harris Jr., J., S., Tucker, J., R. 1997; 71: 1083-1085
Low Noise FET Design for Wireless Communications Franca-Neto, M., Mao, E., Harris Jr., J., S. 1997
Experiments on the Statistics of Coulomb Blockade Peak Spacing: Beyond Random Matrix Theory Marcus, C., M., Patel, S., R., Cronenwett, S., M., Stewart, D., R., Huibers, A., G., Harris Jr., J., S. 1997
Arsenic Precipitation in GaAs for Single-Electron Tunneling Applications Hung, C., Y., Harris Jr., J., S. 1997
Laser parameter extraction for tunable vertical cavity lasers Elect. Lett. Lin, C., C., Sugihwo, F., Harris Jr., J., S. 1997; 20 (33): 1705-1707
Intersubband Absorption Saturation Study of Narrow III-V Multiple Quantum Wells in the l = 2.8-9 µm Spectral Range Semicond. Sci. Technol. Vodopyanov, K., L., Chazapis, V., Phillips, C., C., Sung, B., Harris Jr., J., S. 1997; 12: 708-714
Growth of Thick GaN Films on RF Sputtered AIN Buffer Layer by Hydride Vapor Phase Epitaxy J. Electronic Materials Lee, H., Yuri, M., Ueda, T., Harris Jr., J., S., Sin, K. 1997; 8 (26): 898-902
Increased Ordering in Vertically Coupled InAs Quantum Dot Arrays Solomon, G., S., Harris Jr., J., S. 1997
Electromechanical Tuning of Lasing Wavelength of Vertical Cavity Lasers Sugihwo, F., Lin, C., C., Larson, M., Harris Jr., J., S. 1997
Cavity ring-down spectroscopy with Fourier-transform-limited light pulses Chem. Phys. Lett. Martin, J., Paldus, B., A., Zalicki, P., Wahl, E., H., Owano, T., G., Harris, J., S. 1997; 1-2 (258): 63-70
Localized Intermixing of AlAs and GaAs Layers for Lithographic Control of the Lateral Oxidation of AlAs Massengale, A., R., Tai, C., Y., Deal, M., D., Plummer, J., D., Harris Jr., J., S. 1997
Optical Heterodyne Detection in Cavity Ring-Down Spectroscopy Chem. Phys Lett. Levenson, M., D., Paldus, B., A., Spence, T., G., Harb, C., C., Harris Jr., J., S., Zare, R., N. 1997
Single Electron Transistor on Atomically Flat a-Al2O3 Substrate made by AFM Nano-Oxidation Process Matsumoto, K., Gotoh, Y., Shirakashi, J. I., Maeda, T., Harris Jr., J., S. 1997
Growth and Defects of Single Crystalline ZnO Buffer Layer on GaN Huang, T., F., Ueda, T., Spruytte, S., Harris Jr., J., S. 1997
30nm Wavelength Tunable Vertical Cavity Lasers Sugihwo, F., Larson, M., C., Harris Jr., J., S. 1997
Scanned Potential Microscopy of a Two-dimensional electron gas Harris, J., S., McCormick, L., Woodside, M., Huang, M., McEuen, P., L., Duruöz, C., I. 1997
Increased Surface Ordering of InAs Island Arrays Using a Multi-Dot Column Subsurface Structure Komarov, S., A., Solomon, G., S., Harris Jr., J., S. 1997
Correlations between Ground and Excited State Spectra of a Quantum Dot Stewart, R., Sprinzak, D., Marcus, C., M., Duruöz, C., I 1997
Low Threshold Continuously Tunable Vertical Cavity Surface Emitting Lasers with 19.1 nm Wavelength Range Appl. Phys. Lett. Sugihwo, F., Larson, M., Harris Jr., J., S. 1997; 70: 547-549
Analysis of Device Parameters for Pnp-Type AlGaAs/GaAs HBTs Including High-Injection Using New Direct Parameter Extraction IEEE Trans. Electron Devices Kameyama, A., R., Massengale, C., H., Dai, C., H., Harris Jr., J., S. 1997; 1 (44): 1-10
Structural and photoluminescence properties of growth-induced InAs island columns in GaAs Solomon, G. S., Trezza, J. A., Marshall, A. F., Harris, J. S. A V S AMER INST PHYSICS. 1996: 2208-2211
View details for Web of Science ID A1996UU48000122
Broad-Range Continuous Wavelength Tuning in Microelectromechanical Vertical-Cavity Surface-Emitting Lasers Digest IEEE/LEOS 1996 Summer Topical Meetings Harris Jr., J., S., Larson, M., C., Massengale, A., R. 1996
Intrinsic Bistability in Nonlinear Transport Through a Submicron Lateral Barrier Surface Science Pilling, G., Cobden, D., H., McEuen, P., L., Duruöz, C., I., Harris Jr., J., S. 1996; 1-3 (362): 652-655
Electroluminescence in vertically aligned quantum dot multilayer light-emitting diodes fabricating by growth-induced islanding Appl. Phys. Lett. Solomon, G., S., Larson, M., C., Harris Jr., J., S. 1996; 13 (69): 1897-1899
Vertical-cavity X-modulators for WDM Powell, J., S., Trezza, J., A., Morf, M., Harris Jr., J., S. 1996
Thermodynamic Analysis and Growth Characterization of thick GaN films grown by Chloride VPE using GaCl3/N2 and NH3/N2 Lee, H., Yuri, M., Ueda, T., Harris Jr., J., S. 1996
Photoluminescence Study of Chloride VPE-Grown GaN Ueda, T., Yuri, M., Lee, H., Harris Jr., J., S. 1996
Growth of Epitaxial GaN Films Using ZnO Buffer Layer by Pulsed Laser Deposition Huang, T., F., Tuncel, E., Yeo, J., S., Harris Jr., J., S. 1996
Chloride VPE Growth of GaN on Pulsed Laser Deposited ZnO buffer Layer Harris, J., S., Ueda, T., Yuri, M., Huang, T., F, Spruytte, S., Lee, H. 1996
Design of Quantum Well Intersubband Transitions for Non-linear Difference Frequency Mixing Technical Digest IEEE/LEOS: Nonlinear Optical Meeting Harris Jr., J., S. 1996
Deep Level Defects in GaAs on Si Substrates Grown by Atomic Hydrogen Assisted Molecular Beam Epitaxy J. Appl. Phys. Okada, Y., Harris Jr., J., S. 1996; 8 (80): 4770-4772
Control of Quasi-Bound States by Electron Bragg Mirrors in GaAs/Al0.3Ga0.7As Quantum Wells Appl. Phys. Lett. Sung, B., Chui, H., C., Martinet, E., L., Harris Jr., J., S. 1996; 19 (68): 2720 - 2722
The Mechanical Properties of NiAl Grown on GaAs by Molecular Beam Epitaxy Weckwerth, M., V., Harris Jr., J., S. 1996
Side Gate Single Electron Transistor with Multi-Islands Structure Operated at Room Temperature made by STM/AFM Nano-Oxidation Process Matsumoto, K., Ishii, M., Shirakashi, J. I., Vartanian, B., J., Harris Jr., J., S. 1996
Micromachined tunable Fabry-Perot filters for wavelength division multiplexing Larson, M., C., Harris Jr., J., S. 1996
Growth of GaAs and InAlAs on High Quality, Epitaxial, NiAl Metal Film Hung, Y., Weckwerth, M., V., Visokay, M., R., Pao, Y., C., Harris Jr., S., J. 1996
Application of Micro-Electro-Mechanical Systems to Optoelectronics Harris Jr., J., S. 1996
Vertical cavity X-modulators for WDM WAVELENGTH DIVISION MULTIPLEXING COMPONENTS Powell, J. S., Trezza, J. A., Morf, M., Harris, J. S. 1996; 2690: 207-216
View details for Web of Science ID A1996BF60T00022
Control of Quasi-Bound States by Electron Bragg Mirrors and electron Lifetime Measurements in GaAs/AlGaAs Quantum Wells Sung, B., Woods, G., L., Rella, C., W., Schwettman, H., A., Fejer, M., M., Harris, J., S. 1996
Vertically Aligned and Electronically Coupled Growth Induced InAs Islands in GaAs Phys. Rev. Lett. Solomon, G., S., Trezza, J., A., Marshall, A., F., Harris Jr., J., S. 1996; 6 (76): 952 - 955
Room Temperature Operation of Single Electron Transistor made by STM Nano-Oxidation Process for TiOx/Ti System Appl. Phys. Lett. Matsumoto, K., Ishii, M., Segawa, K., Oka, Y., Vartanian, B., J., Harris Jr., J., S. 1996; 1 (68): 34-36
Creation and Optimization of Vertical Cavity X-Modulators IEEE J. Quant. Elect. Trezza, J., A., Morf, M., Harris Jr., J., S. 1996; 1 (32): 53-60
Basic Analysis of Atomic-scale Growth Mechanisms for Molecular Beam Epitaxy of GaAs using atomic Hydrogen as a surfactant J. Vac.Sci. Technol. B Okada, Y., Harris Jr., J., S. 1996; 3 (14): 1725 - 1728
Vertical Cavity X-Modulators for Reconfigurable Optical Interconnection and Routing Powell, J., S., Trezza, J., A., Morf, M. 1996
Vapor Phase Epitaxy of GaN Using Gallium Tri-Chloride and Ammonia Yuri, M., Ueda, T., Lee, H., Itoh, K., Baba, T., Harris Jr., J., S. 1996
Size Dependence of Room Tempeature Operated Side Gate Single Electron Transistor with Multi-Islands Structure made by STM/AFM Nano-Oxidation Process Matsumoto, K., Ishii, M., Shirakashi, J., I., Vartanian, B., J., Harris Jr., S., J. 1996
GaN Film Growth by a Supersonic Arcjet Plasma Cappelli, M., A., Kull, A., E., Schwendner, K., Lee, H., Harris Jr., S., J. 1996
Broad-Range Continuous Wavelength Tuning in Microelectronmechanical Vertical Cavity Surface Emitting Lasers Harris Jr., J., S. 1996
Atomic Force Microscope Chemically Induced Direct Processing Shimbo, B., N., Komarov, S., Vartanian, B., J., Okada, Y., Harris Jr., S., J. 1996
Two-State Electrically Controllable Phase Diffraction Grating Using Arrays of Vertical-Cavity Phase Flip Modulators IEEE Photon. Techno. Lett. Trezza, J., A., Harris Jr., J., S. 1996; 9 (8): 1211-1213
Strain Relaxation in Compositionally Graded Epitaxial Layers J. Vac. Sci. Techno. B Kim, S., D., Lord, S., M., Harris Jr., J., S. 1996; 2 (14): 642-646
Optical Properties and Morphology of GaN Grown by MBE on Sapphire Substrates Tuncel, E., Oberman, D., B., Lee, H., Ueda, T., Harris Jr., S., J. 1996
Switching and Hysteresis in Quantum Dot Arrays J. of Nanotechnology Duruöz, I., Clarke, R., M., Marcus, C., M., Harris Jr., J., S. 1996; 4 (7): 372 - 375
Raman Scattering Study of GaN Films J. Appl. Phys. Kirollov, D., Lee, H., Harris Jr., J., S. 1996; 7 (80): 4058-4062
Observation of Super-Structure in High-Quality Pseudomorpic Film of NiAl grown on GaAs J. of Crystal Growth Hung, C., Y., Weckwerth, M., V., Marshall, A., F., Pao, Y., C., Harris Jr., J., S. 1996; 2 (169): 201-208
Continuously-tunable micromachined vertical-cavity surface-emitting laser with 18 nm range Electr. Lett. Larson, M., C., Massengale, A., R., Harris Jr., J., S. 1996; 4 (32): 330-332
Fabrication of Novel Quantum Devices - Toward Room Temperature Operation of Single Electron Devices Harris Jr., J., S. 1996
Wide and Continuous Wavelength Tuning in a Vertical Cavity Surface Emitting Laser Using a Micromachined Deformable Membrane Mirror Appl. Phys. Lett. Larson, M., C., Harris Jr., J., S. 1996; 7 (68): 891-893
Vapor Phase Epitaxy of GaN using GaCl3/N2 and NH3/N2 J. Crystal Growth Lee, H., Harris Jr., J., S. 1996: 689– 696
Saturation Study of III-V Multi Quantum Well Bound-to-Bound and Bound-to-Quasibound Intersubband Transitions in the 3 - 10 µm Spectral Range Semicond. Sci. Techno. Vodopyanov, K., L., Chazapis, V., Phillips, C., C., Sung, B., Harris Jr., J., S. 1996
Reactive Ion Etching of Gallium Nitride Films J. Electric Materials Lee, H., Oberman, D., B., Harris Jr., J., S. 1996; 5 (25): 835-837
Micromachined Tunable Vertical-Cavity Surface-Emitting Lasers Technical Digest 1996 IEEE IEDM Larson, M., C., Sugihwo, F., Massengale, A., R., Harris Jr., J., S. 1996
Single electron devices with various structures made by STM/AFM nano-oxidation process Matsumoto, K., Ishii, M., Shirakashi, J., Vartanian, B., Harris Jr., S., J. 1996
Collector-up AlGaAs/GaAs heterojunction bipolar transistors using oxidized AlAs for current confinement Electr. Lett. Massengale, C., H., Larson, M., C., Dai, C., Harris Jr., J., S. 1996; 4 (32): 399-401
Effects of monolayer coverage, flux ratio, and growth rate on the island density of InAs islands on GaAs Appl. Phys. Lett. Solomon, G., S., Trezza, J., A., Harris Jr., J., S. 1995; 23 (66): 3161-3163
CHARACTERIZATION OF IN-SITU VARIABLE-ENERGY FOCUSED ION BEAM/MBE MQW STRUCTURES Bone, D. J., LEE, H., Williams, K., Harris, J. S., Pease, R. F. IOP PUBLISHING LTD. 1995: 359-362
View details for Web of Science ID A1995BC92S00066
Room Temperature Operation of Single Electron Transistor made by STM Nano-Oxidation Process Matsumoto, K., Ishii, M., Segawa, K., Oka, Y., Vartanian, B., J., Harris Jr., J., S. 1995
MBE Growth of High-Quality GaAs and AlGaAs Molecular Beam Epitaxy: Applications to Key Materials Larkins, C., Harris Jr., J., S. edited by Farrow, R., F. C. Noyes, Park Ridge. 1995: 114-274
Growth Induced and Patterned 0-Dimensional Quantum Structures in Low Dimensional Structures Prepared by Epitaxial Growth of Regrowth on Patterned Substrate Solomon, G., S., Duruöz, C., I., Trezza, J., A., Clarke, R., M., Marcus, C., M., Harris, J., S. edited by Eberl et al, K. 1995: 313 - 324
Continuously Tunable Micro-Electromechanical Vertical-cavity Surface-emitting Lasers Internl J. Optoelectronics Larson, M., C., Massengale, A., R., Harris Jr., J., S. 1995; 5 (10): 401 – 408
Broadly -Tunable Resonant-Cavity Light-emitting Diode IEEE Photonics Technology Lett. Larson, M., C., Harris Jr., J., S. 1995; 11 (7): 1267 - 1269
Periodic Mode Shift in Vertical Cavities Grown by Molecular Beam Epitaxy Eng, L., E., Toh, K., Chang-Hasnain, C., J., Bacher, K., Harris Jr., J., S. 1995
Comparison of Experimental and Theoretical Results of Room Temperature Operated Single Electron Transistor made by STM/AFM Nano - Oxidation Process Matsumoto, K., Ishii, M., Segawa, K., Oka, Y., Vartanian, B., J., Harris Jr., J., S. 1995
Tunable Mid-Infrared Generation by Difference Frequency Mixing of Diode Laser Wavelengths in Intersubband InGaAs / AlAs Quantum Wells Chui, H., C., Woods, G., L., Fejer, M., M., Martinet, E., L., Harris Jr., J., S. 1995
Threshold, Switching, and Hysteresis in Quantum Dot Arrays Phys. Rev. Lett. Duröz, C., I, Clarke, R., M., Marcus, C., M., Harris Jr., J., S. 1995; 16 (74): 3237-3240
Observation of 1.5µm Quantum Confined Stark Effect in InGaAs/AlGaAs Multiple Quantum Wells on GaAs Substrates J. of Vac. Sci. Tech. Kim, S., D., Trezza, J., A., Harris Jr., J., S. 1995; 4 (B 13): 1526 - 1528
Epitaxial growth of thick pseudomorphic NiAl metal films on GaAs by migration enhanced epitaxy J. Crystal Growth Weckwerth, M., V., Hung, C., Y., Pao, Y., C., Harris Jr., J., S. 1995; 150: 1150 – 1153
A Wet Etching Technique for Accurate Etching of GaAs/AlAs Distributed Bragg Reflectors J. Electrochem. Soc. Bacher, K., Harris Jr., J., S. 1995; 7 (142): 2386 – 2388
Wavelength Shift in Vertical Cavity Laser Arrays on a Patterned Substrate Eng, L., E., Bacher, K., Yuen, W., Larson, M., Ding, G., Harris Jr., J., S. 1995
Substrate temperature and monolayer coverage effects on epitaxial ordering of InAs and InGaAs islands on GaAs Solomon, G., S., Trezza, J., A., Harris Jr., J., S. 1995
MBE growth of gan with ECR plasma and hydrogen azide Oberman, D., B., Lee, H., Gotz, W., K., Harris Jr., J., S. 1995
Heteroepitaxial growth of GaN on GaAs by ECR plasma-assisted MBE Lee, H., Oberman, D., B., Gotz, W., Harris Jr., J., S. 1995
Effect of substrate miscut on the structural-properties of ingaas linear graded buffer layers grown by molecular-beam epitaxy on GaAs Eldredge, J., W., Matney, K., M., Goorsky, M., S., Chui, H., C., Harris Jr., J., S. 1995
Coupled Quantum Wells for Optical Modulation Confined Electron and Photon Systems Trezza, J., A., Harris Jr., J., S. edited by Burnstenin, E., Weisbuck, C. Plenum Press. 1995: 759 - 764
Vertical Coupled-Cavity Microinterferometer on GaAs with deformable-membrane top mirror IEEE Photonics Technology Lett. Larson, M., Pezeshki, B., Harris Jr., J., S. 1995; 4 (7): 382 - 384
Temperature Dependence of Phase Breaking in Ballistic Quantum Dots Phys. Rev. B Clarke, R., M., Chan, I., H., Marcus, C., M., Duruöz, C., I., Harris Jr., J., S., Campman, K. 1995; 4 (52): 2656-2659
Reactive ion etching of GaN using CHF3/Ar and C2ClF5/Ar plasmas Appl. Phys. Lett. Lee, H., Oberman, D., B., Harris Jr., J., S. 1995; 12 (67): 1754 – 1756
Multiple Wavelength Vertical Cavity Laser Arrays on Patterned Substrates IEEE J. of Select Topics in Quantum Electronics Eng, L., E., Bacher, K., Yuen, W., Harris Jr., J., S., Chang-Hasnain, C., J. 1995; 1: 624 - 628
Interface Smoothing of High Indium Content InGaAs Layers on GaAs J. Electrochem. Soc. Kim, S., D., Lee, H., J., Harris Jr., J., S. 1995; 5 (142): 1667-1670
Intersubband Transitions to the Above-Barrier States Controlled by Electron Bragg Mirrors Sung, B., Chui, H., C., Martinet, E., L., Harris Jr., J., S. 1995
Coupled Quantum Wells for Optical Modulation Trezza, J., A., Harris Jr., J., S. 1995
Fabrication of GaAs Orientation Template Substrates for Quasi-Phasematched Guided-Wave Nonlinear Optics Nonlinear Guided Waves and Their Applications, OSA Technical Digest Series Optical Society of America, Washington DC Eyres, L., A., Ebert, C., B., Chui, H., C., Harris Jr., J., S., Fejer, M., M. 1995: 156-158
Broadly Tunable Resonant-cavity Light Emission Appl. Phys. Lett. Larson, M., C., Harris Jr., J., S. 1995; 5 (67): 590 - 592
2-dimensional analysis of self-sustained pulsation for narrow-stripe AlGaAs lasers IEEE J. Selected Topics Quantum Electronics Yuri, M., Harris Jr., J., S., Takayama, T., Imafuji, O., Naito, H., Kume, M. 1995; 2 (1): 473-479
Growth Induced and Patterned 0-Dimensional Quantum Structures Harris, J., S., Solomon, G., S., Duruöz, C., I., Trezza, J., A., Clarke, R., M., Marcus, C., M. 1995
GaAs-on-Ge Heteroepitaxy by Atomic Hydrogen-Assisted Molecular Beam Epitaxy Okada, Y., Harris Jr., J., S., Sutoh, A., Kawabe, M. 1995
MBE Growth of High Tc Superconductors Molecular Beam Epitaxy: Applications to Key Materials Schlom, D., G., Harris Jr., J., S. edited by Farrow, R., F. C. Noyes, Park Ridge. 1995: 505-622
Periodically Induced Mode Shift in Vertical Cavity Fabry Perot Etalons Grown by Molecular Beam Epitaxy Photon. Techn. Lett. Eng, L., E., Toh, K., Chang-Hasnain, C., J., Bacher, K., Harris Jr., J., S. 1995; 3 (7): 235-237
Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azide J. Crystal Growth Oberman, D., B., Lee, H., Götz, W., K., Harris Jr., J., S. 1995; 150: 912 – 915
Modeling of Turn-on Jitter in Vertical Cavity Surface Emitting Lasers Elec. Lett. Harris, J., S., Ding, G., Y., Corzin, S., W., Tan, M., R., Wang, S., Y. 1995
Growth and Characterization of Epitaxial Strontium Barium Niobate Thin Films Prepared by Pulsed Laser Deposition J. of Electronic Materials Schwyn-Thöny, S., Youden, K., E., Harris Jr., J., S., Hesselink, L. 1995
50 nm GaAs/AlAs wire structures grown on corrugated GaAs J. Vac. Sci. Technol. Miller, D., J., Harris Jr., J., S. 1994; 2 (B12): 1286 - 1289
Large Energy Intersubband Transitions in High Indium Content InGaAs/AlGaAs Quantum Wells NATO ASI: Quantum Well Intersubband Transition Physics and Device Chui, H., C., Martinet, E., L., Fejer, M., M., Harris Jr., J., S. Kluwer Academic Publishers. 1994: 251-9
Short Wavelength Intersubband Transitions in InGaAs/AlGaAs quantum wells grown on GaAs Appl. Phys. Lett. Chui, H., C., Martinet, W., L., Fejer, M., M., Harris Jr., J., S. 1994; 6 (64): 736-8
Growth of Epitaxial Strontium Barium Niobate Thin Films by Pulsed Laser Deposition Appl. Phys. Lett. Thöny, S., Schwyn, Youden, K., E., Harris Jr., J., S., Hesselink, L. 1994; 16 (65): 2018–2020
Reflection high-energy electron diffraction intensity oscillations during molecular beam epitaxy on rotating substrates J. Vac. Sci. Technol. van der Wagt, J., P. A., Harris Jr., J., S. 1994; 2 (B 12): 1236-8
MBE Growth of In0.65Ga0.35As Quantum Wells on GaAs Substrates for 1.5µm Exciton Resonance J. Crystal Growth Kim, S., D., Lee, H., Harris Jr., J., S. 1994: 37-43
Growth Studies on In0.5Ga0.5As / AlGaAs Quantum Wells Grown on GaAs with a Linearly Graded InGaAs Buffer J. Vac. Sci. Technol Chui, H., C., Harris Jr., J., S. 1994; 2 (B12): 1019-1022
Creation and Optimization of Vertical Cavity Phase Flip Modulators J. of Appl. Phys. Trezza, J., A., Harris Jr., J., S. 1994; 10 (75): 4878-4884
I-V Kink in InAIAs/InGaAs MODFETs due to Weak Impact Ionization Process in the InGaAs Channel Zhou, G., G., Fischer-Colbrie, A., Harris Jr., J., S. 1994
Free-electron laser nonlinear spectroscopy of doubly resonant (5.5-3.0 µm and 4.1- 2.1 µm) InGaAs/AlGaAs asymmetric quantum wells Martinet, E., L., Woods, G., L., Chui, H., C., Harris Jr., J., S., Fejer, M., M., Rella, C., A. edited by Dohler, G., H., Koteles, E., S. 1994
Applications of High Indium Content InGaAs/AlGaAs Quantum Wells in the 2-7µm Regime NATO ASI: Quantum Well Intersubband Transition Physics and Devices Martinet, E., L., Vartanian, B., J., Woods, G., L., Chui, H., C., Harris Jr., J., S. edited by Liu, H., C., Levine, B., F., Andersson, J., Y. Kluwer Academic Publishers. 1994: 261-273
The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si Knall, J., Romano, L., T., Biegelsen, D., K., Bringans, R., D., Chui, H., C., Harris Jr., J., S. 1994
Reflectance and Raman Spectra of Metallic Oxides, LaSrCoO and CaSrRuO: Resemblance to Superconducting Cuprates Bozovic, I., Kim, J., H., Harris Jr., J., S., Eom, C., B., Phillips, J., M., Cheung, J., T. 1994
Observation of Quantum Mechanical Reflections of Electrons at an In-situ Grown GaAs / Aluminum Schottky Barrier J. Vac. Sci. Technol. Weckwerth, M., V., Wagt, J., P. A. van der, Harris Jr., J., S. 1994; 2 (B 12): 1303-5
Short Wavelength (5.36 µm to 1.85 µm) Nonlinear Spectroscopy of Coupled InGaAs / AlAs Intersubband Quantum Wells Martinet, E., L., Chui, H., C., Woods, G., L., Fejer, M., M., Harris Jr., J., S. 1994
Normal-incidence intersubband hole absorption in In0.5Ga0.5As/Al0.45Ga0.55As quantum wells Vartanian, B., J., Harris Jr., J., S. 1994
Local vibrational modes in Mg-doped gallium nitride Phys. Rev. B Brandt, M., S., Ager III, J., W., Götz, W., Johnson, N., M., Harris Jr., J., S., Molnar, R., J. 1994; 49: 14758 - 14761
Doubly resonant second harmonic generation of 2.0 µm light in coupled InGaAs/AlAs Quantum Wells Appl. Phys. Lett. Chui, H., C., Martinet, E., L., Woods, G., L., Fejer, M., M., Harris Jr., J., S. 1994; 25 (64): 3365 - 3367
Determination of AlAs mole fraction in Alx Ga1-xAs using Raman spectroscopy and x-ray diffraction J. Vac. Sci. Technol. Solomon, G., S., Kirillov, D., Chui, H., C., Harris Jr., J., S. 1994; 2 (B12): 1078-1081
Phase-Breaking Rates from Conductance Fluctuations in a Quantum Dot Marcus, C., M., Clarke, R., M., Chan, I., H., Duruöz, C., I., Harris Jr., J., S. 1994
Observation of Resonant Tunneling Through Localized Continuum States in Electron Wave Interference Diodes Appl. Phys. Lett. Carnahan, R., E., Maldonado, M., A., Martin, K., P., Higgins, R., J., Van der Wagt, J., P. A., Harris Jr., J., S. 1994; 18 (64): 2403-2405
High Contrast Asymmetric Fabry-Perot Appl Phys. Lett. Trezza, J., A., Pezeshki, B., Larson, M., C., Lord, S., M., Harris Jr., J., S. 1993; 74: 452-454
Large, Low-Voltage Absorption Changes and Absorption Bistability in GaAs/AlGaAs/InGaAs Asymmetric Quantum Wells J. Appl. Phys. Trezza, J., A., Larson, M., C., Lord, S., M., Harris Jr., J., S. 1993; 74: 1972-1978
Electroabsorption Modulators Operating at 1.3 µm on GaAs substrates Optical and Quantum Electronics Lord, S., M., Pezeshki, B., Harris Jr., J., S. 1993; 25: 5953-5964
The Effect of Si Planar Doping on DX Centers in Al0.26Ga0.74As J. Crystal. Growth. Solomon, G., S., Roos, G., Harris Jr., J., S. 1993; 127: 737-741
1.3µm Electroabsorption Reflection Modulators on GaAs Appl. Phys. Lett. Lord, S., M., Trezza, J., A., Larson, M., C., Pezeshki, B., Harris Jr., J., S. 1993; 63: 806-808
1.3 µm Exciton Resonances in InGaAs Quantum Wells Grown by Molecular Beam Epitaxy Using a Slowly Graded Buffer Layer Lord, S., M., Pezeshki, B., Kim, S., D., Harris Jr., J., S. 1993
Low Voltage, Low Chirp, Absorptively Bistable Transmission Modulators Using Type IIA and Type IIB In0.3Ga0.7As/Al0.33Ga0.67As/In0.15Ga0.85As Asymmetric Coupled Quantum Wells J. Appl. Phys. Trezza, J., A., Larson, M., C., Lord, S., M., Harris, J., S. 1993; 11 (74): 6495-6502
Lattice-Mismatched InGaAs Double Heterojunction Bipolar Transistors Grown on GaAs Substrates Jpn. J. Appl. Phys. Part 1 Ito, H., Harris Jr., J., S. 1993; 32 (11A): 4923-4927
Schwabish Gmundt, Germany Wagt, J., P. A van, Harris Jr., J., S. 1993
Critical Passivation Ledge Thickness in AlGaAs/GaAs Heterojunction Bipolar Transistors J. Vac. Sci. Technol. Liu, W., Harris, J., S. 1993; B 11: 6-9
Zero Chirp Quantum Well Asymmetric Fabry-Perot Reflection Modulators Operating Beyond the Matching Condition J. Appl. Phys. Trezza, J., A., Larson, M., C., Harris Jr., J., S. 1993; 12 (74): 7061-7066
Surface-emitting Second-harmonic Generation in a Semiconductor Vertical Resonator Optics Lett. Lodenkamper, R., Bortz, M., L., Fejer, M., M., Bacher, K., Harris Jr., J., S. 1993; 21 (18): 1798-1800
Intersubband Transitions in High Indium Content InGaAs/AlGaAs Quantum Wells Appl. Phys. Lett. Chui, H., C., Lord, S., M., Martinet, E., Fejer, M., M., Harris Jr., J., S. 1993; 3 (63): 364-366
High Contrast Reflection Electro-absorption Modulators with Zero Phase Change Appl. Phys. Lett. Trezza, J., S., Pezeshki, B., Larson, M., C., Lord, S., M., Harris Jr., J., S. 1993; 63: 452-454
Hydrogen Passivation of Nonradiative Defects in InGaAs/AlxGa1-xAs Quantum Wells J. Appl. Phys. Lord, S., M., Roos, G., Harris, J., S., Johnson, N., M. 1993
Cut-off Frequency and D.C. Gain of Heterojunction Bipolar Transisitrs Int. J. Electronics Liu, W., Harris Jr., J., S. 1993; 74: 401-106
The Effect of Si Doping on DX Centers in Al.26Ga.74As Solomon, G., S., Roos, G., Harris Jr., J., S. 1993
Graded Buffer Layers for Molecular Beam Epitaxial Growth of High In Content InGaAs On GaAs for Optoelectronics Lord, S., M., Pezeshki, B., Marshall, A., F., Harris Jr., J., S., Fernandez, R., Harwit, A. 1993
Simulation of RHEED Intensity Oscillations During MBE Growth J. Crystal. Growth. van der Wagt, J., P. A., Harris Jr., J., S. 1993; 127: 1025-1029
Phase Characteristics of Reflection Electro-Absorption Modulators Appl. Phys. Letts. Liu, D., Pezeshki, B., Lord, S., M., Harris Jr., J., S. 1993; 62: 2158-2160
Lattice Mismatched InGaAs Double Heterojunction Bipolar Transistors Grown on GaAs Substrates IEEE Trans. Ed Ito, H., Harris Jr., J., S. 1993
Enhancement of Photoluminescence Intensity in InGaAs/Al(x)Ga(1-x)As Quantum Wells by Hydrogenation Appl. Phys. Lett. Lord, S., M., Roos, G., Pezeshki, B., Harris Jr., J., S., Johnson, N., M. 1992; 60: 2276-2278
Stacking Fault Stability in GaAs/Si Hetero-Epitaxial Growth Crystal Growth Kim, S., D., Harris Jr., J., S. 1992; 123: 439-444
Molecular Beam Epitaxy Growth of Vertical Cavity Optical Devices with In-Situ Corrections Appl. Phy. Lett. Bacher, K., Pezeshki, B., Lord, S., M., Harris Jr., J., S. 1992; 61: 1387-1889
Ideality Factor of Extrinsic Base Surface Recombination Current in AlGaAs/GaAs Heterojunction Bipolar Transistors Elect. Lett. Harris, J., S., Liu, W. 1992; 28: 379-380
High-Performance Microwave AlGaAs-InGaAs Pnp HBT with High-DC Current Gain IEEE Microwave & Guided Wave Letts. Liu, W., Costa, D., Hill D., Harris Jr., J., S. 1992: 331-333
Geometrical Growth Rate Nonuniformity Effects on Reflection High-Energy Electron Diffraction Signal Intensity Decay J. Vac. Sci. Technol. B van der Wagt, J., P. A., Bacher, K., L., Solomon, G., S., Harris Jr., J., S. 1992: 825-828
Effects of Replacing a Portion of the AlGaAs Base-Emitter Junction of Heterojunction Bipolar Transistors by GaAs Int. Jrnl. Elect. Liu, W., Harris Jr., J., S. 1992; 72: 401-408
Design and Performance of a Low-Threshold-Current Grating-Coupled Surface-Emitting Laser Solid State Elect. Takigawa, S., Bacher, K., Aronson, L., B., Harris Jr., J., S. 1992; 35: 1241-1245
Derivation of the Emitter-Collector Transit Time of Heterojunction Bipolar Transistors Solid State Elect. Liu, W., Costa, D., Harris Jr., J., S. 1992; 35: 541-545
Dependence of the Base Crowding Effect on Base Doping and Thickness for Npn AlGaAs/GaAs HBTs Elect. Lett. Liu, W., Harris, J., S. 1992; 22 (27): 2048-2050
Contact Impedance in Heterojunction Bipolar Transistors Solid State Elect. Liu, W., Dai, C., Harris Jr., J., S. 1992; 35: 547-552
Hydrogen Passivation of Defects in InGaAs/AlxGa1-xAs Quantum Wells Lord, S., M., Roos, G., Pezeshki, B., Harris Jr., J., S. 1992
Optical Phase Modulator Utilizing Electroabsorption in a Fabry-Perot Cavity Appl. Phys. Lett. Pezeshki, B., Williams, G., A., Harris Jr., J., S. 1992; 60: 1061-1063
Nonlinear Optical Properties and Ultrafast Response of GaAs/AlAs Type-II Quantum Wells IEEE JQE Fu, W., S., Harris Jr., J., S., Binder, R., Koch, S., W., Klem, J., F., Olbright, G., R. 1992; 28: 2404-2415
Low-Conductance Drain (LCD) Design of InAlAs/InGaAs/InP HEMT’s IEEE Electron Dev. Lett. Pao, Y., C., Harris Jr., J., S. 1992; 13: 535-537
Low Threshold Current Grating-Coupled Surface-Emitting Strained-InGaAs Single Quantum Well Laser with GaAs Optical Confinement Structure Appl. Phys. Lett. Takigawa, S., Bacher, K., Aronson, L., B., Harris Jr., J., S. 1992; 60: 265-267
Free Chare-Carrier Plasmons in Ba1-x KxBi03: A Close Relation to Cuprate Superconductors Phys. Rev. B Bozovic, I., Kim, J., H., Harris, J., S., Hellman, E., S., Hartford, E., H., Chan, P., K. 1992; 46: 1182-1187
Effects of Emitter-Base Contact Spacing on the Current Gain in Heterojunction Bipolar Transisitors Jpn. J. Appl. Phy. Liu, W., Harris, J., S. 1992; 31: 2349-2351
Current Gain of Graded AlGaAs/GaAs Heterojunction Bipolar Transistors With and Without a Base Quasi-Electric Field IEEE Tran. Elect. Dev. Liu, W., Costa, D., Harris Jr., J., S. 1992; 39: 2422-2429
Current Dependence of Base-Collector Capacitance of Bipolar Transistors Solid State Elect. Liu, W., Harris Jr., J., S. 1992; 35: 1051-1057
A High-Gain AlGaAs/GaAs Heterojunction Bipolar Transistor Grown on Silicon Substrate Jpn. J. Appl. Phys. Harris, J., S, Liu, W., Kim, S., D. 1992; 31: 2656-2659
1.3 µm Exciton Resonances in InGaAs Quantum Wells Grown by Molecular Beam Epitaxy Using a Slowly Graded Buffer Layer J. Crystal Growth. Lord, S., M., Pezeshki, B., Kim, S., D., Harris, J., S. 1992: 759-764
Monolithic Integration GaAs and Si Bipolar Devices for Optical Interconnect Systems Nasserbakht, G., N., Adkisson, J., W., Wooley, B., A., Harris Jr., J., S., Kamins, T., I., Wong, S., S. 1992
InGaAs Double Heterojunction Bipolar Transistors Grown on GaAs Substratee Electronics Letters Ito, H., Harris Jr., J., S. 1992; 7 (28): 655-656
X-Valley Tunneling in Single AlAs Barriers J. Appl. Phys. Boykin, T., B., Harris Jr., J., S. 1992; 72: 988-992
Diode Ideality Factor for Surface Recombination Current in AlGaAs/GaAs Heterojunction Bipolar Transisitors IEEE Trans. Elect. Dev. Liu, W., Harris, J., S. 1992; 39: 2726-2732
An Advantage of Pnp over Npn AlGaAs/GaAs Heterojunction Bipolar Transistors for Microwave Power Applications Jpn. J. Appl. Phys. Liu, W., Dai, C., Harris Jr., J., S. 1992; 31: L452-L454
Visible Wavelength Fabry-Perot Reflection Modulator Using Indirect-Gap AlGaAs/As Elect. Lett Pezeshki, B., Liu, D., Lord, S., M., Harris Jr., J., S. 1992; 28: 1170-1171
Parastic Conduction Current in the Passivation Ledge of AlGaAs/GaAs Heterojunction Bipolar Transistors Solid State Elect. Liu, W., Harris Jr., J., S. 1992; 35: 891-895
Optical Gain and Ultrafast Nonlinear Response in GaAs/AlAs Type-II Quantum Wells Appl. Phys. Lett. Fu, W., S., Olbright, G., R., Klem, J., F., Harris Jr., J., S. 1992; 14: 1661-1663
Mesa Surface Recombination Current in AlGaAs/GaAs Heterojunction Bipolar Transistors with an Emitter-Base-Emitter Structure J. Vac. Sci. Technol. B Liu, W., Harris, J., S. 1992: 1285-1290
Low-Frequency Noise Properties of N-p-n AlGaAs/GaAs Heterojunction Bipolar Transistors IEEE Trans. Elect. Dev. Costa, D., Harris Jr., J., S. 1992; 39: 2383-2394
Investigation of High In Content InGaAs Quantum Wells Grown on GaAs by Molecular Beam Epitaxy Elect. Lett. Lord, S., M., Pezeshki, B., Harris Jr., J., S. 1992; 28: 1193-1195
Hydrogen Passivation of Si and Be Dopants in InAlAs Roos, G., Johnson, N., M., Pao, Y., C., Harris Jr., J., S., Herring, C. 1992
Noninterferometric Optical Subtraction using Reflection-Electroabsorption Modulators Optics Letters Shoop, B., L., Pezeshki, B., Goodman, J., W., Harris Jr., J., S. 1992; 17: 58-60
Laser-Power Stabilization Using a Quantum-Well Modulator IEEE Photonics Tech. Lett. Shoop, B., L., Pezeshki, B., Goodman, J., W., Harris Jr., J., S. 1992; 4: 136-139
Influence of Dislocations on the DC Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors IEEE Elect. Dev. Lett. Ito, H., Nakajima, O., Furuta, T., Harris Jr., J., S. 1992; 13: 232-234
Anti-Resonances in the Transmission of a Simple Two-State Model Phys. Rev. B Boykin, T., B., Pezeshki, B., Harris Jr., J., S. 1992; 19 (46): 12769-12772
Strained InGaAs/GaAs single quantum well lasers with saturable absorbers fabricated by quantum well intermixing Appl. Phys. Lett. Yamada, N., Harris, J., S. 1992; 20 (60): 2463-65
GaAs/AlAs Quantum Wells for Electroabsorption Modulators Appl. Phys. Lett. Pezeshki, B., Lord, S., M., Boykin, T., B., Harris Jr., J., S. 1992; 60: 2779-2781
AlGaAs/AlAs QW Modulator for 6328Å Operation Elect. Letts. Pezeshki, B., Lord, S., M., Boykin, T., B., Shoop, B., L., Harris Jr., J., S. 1991; 27: 1971-1973
Direct Extraction of the AlGaAs/GaAs Heterojunction Bipolar Transistor Small-Signal Equivalent Circuit IEEE Transactions on Electron Dev. Costa, D., Liu, W., Harris Jr., J., S. 1991; 38: 2018-2024
Lateral Resonant Tunneling Transistors Employing Field-Induced Quantum Wells and Barriers Chou, S., Y., Allee, D., R., Pease, R., F., Harris Jr., J., S. 1991
Geometrical Growth Rate Nonuniformity Effects on RHEED Signal Intensity Decay Wagt, J., P. A. van der, Bacher, K., L., Solomon, G., S., Harris Jr., J., S. 1991
Femtosecond Gain Dynamics in Semiconductors Harris, J., S., Fu, W., S., Poirier, G., E., Bryan, R., P., Klem, J., F., Olbright, G., R. 1991
Thermal Dissociation Energy of the Si-H Complex in n-type GaAs Appl. Phys. Lett. Roos, G., Johnson, N., M., Herring, C., Harris, J., S. 1991; 59: 461-463
Second-Order Susceptibility in Asymmetric Quantum Wells and its Control by Proton Bombardment Appl. Phys. Lett. Yoo., S., J. B., Fejer, M., M., Byer, R., L., Harris Jr., J., S. 1991; 58: 1724-1726
Optical Study of Plasmons in Tl2Ba2Ca2Cu3O10 Phys. Rev. Bozovic, I., Kim, J., H., Harris Jr., J., S., Lee, W., Y. 1991; 43: 1169-1172
Accurate Measurement of MBE Substrate Temperature J. Crystal Growth Lee, W., S., Yoffee, G., W., Schlom, D., G., Harris Jr., J., S. 1991; 111: 131-135
Ballistic Electron Contributions in Vertically Integrated Resonant Tunneling Diodes Superlattices & Microstructures Harris, J., S., Rascol, J., J. L., Martin, K., P., Carnahan, R., E., Higgins, R., J., Cury, L. 1991; 10: 175-178
Reflection Electro-Absorption Modulator with High Reflectivity Change in a Novel Normally-Off Configuration Thomas, D., Pezechki, B., Harris Jr., J., S. 1991
Reduction of Low-Frequency Noise In Npn AlGaAs/GaAs HBTs Costa, D., Liu, W., Harris Jr., J., S. 1991
Electro-Absorption in InGaAs/AlGaAs Quantum Wells Pezeshki, B., Lord, S., M., Harris Jr., J., S. 1991
Dynamic Optical Grating for Laser Beam Steering Applications Pezeshki, B., Apte, R., Lord, S., M., Harris Jr., J., S. 1991
Accumulation mode GaAlAs/GaAs bipolar transistor Harris, J., S., Matsumoto, K., Ishii, M., Morozumi, H., Imai, S., Sakamoto, K. 1991
Threshold Reduction in Strained InGaAs Single Quantum Well Lasers by Rapid Thermal Annealing Appl Phys. Lett. Yamada, N., Roos, G., Harris Jr., J., S. 1991; 59: 1040-1042
Plasmons in High-Temperature Superconductors Physica C Kim, J., H., Bozovic, I., Harris Jr., J., S., Lee, W., Y., Eom, C., B., Geballe, T., H. 1991; 185: 1019-1020
Enhancement of Optical Reflectivity of High-Tc Superconducting Films by Ion Milling Appl. Phys. Letts. Kim, J., H., Char, K., Bozovic, I., Lee, W., Y., Kapitulnik, A., Harris Jr., J., S. 1991; 58: 2558-2560
A Tight Binding Model for GaAs/AlAs Resonant Tunnel Diodes Phys. Rev.B Boykin, T., B., van der Wagt, J., P. A., Harris Jr., J., S. 1991; 43: 4777-4784
Plasmons in High -Tc Cuprate Superconductors Kim, J., H., Bozovic, I., Harris Jr., J., S., Lee, W., Y., Eom, C., B., Geballe, T., H. edited by Ashkenazy, J., Vezzol, G. 1991
Physical Origin of the High Output Conductance in In0.52Al0.48As/In0.53Ga0.47As/InP HEMTs Pao, Y., C., Harris Jr., J., S. 1991
Accumulation mode GaAlAs/GaAs bipolar transistor with two dimensional hole gas base Harris, J., S., Matsumoto, K., Ishii, M., Morozumi, H., Imai, S., Sakamoto, K. 1991
Surface Emitting Second Harmonic Generation in Vertical Resonator Elect. Ltts. Lodenkamper, R., Fejer, M., M., Harris Jr., J., S. 1991; 27: 1882-1884
Preparation of Optically Smooth Surfaces of High-Tc Superconducting Films Kim, J., H., Kapitulnik, A., Harris Jr., J., S., Char, K., Bozovic, I., Lee, W., Y. 1991
Low-Frequency Noise Characterization of Npn AlGaAs/GaAs Heterojunction Bipolar Transistors Costa, D., Harris, J., S. 1991
Femtosecond-gain Spectroscopy of GaAs Kim, J., H., Kapitulnik, A., Harris Jr., J., S., Char, K., Bozovic, I., Lee, W., Y. 1991
Theoretical Comparison of Base Bulk Recombination Current and Surface Recombination Current of a MESA AlGAAs/GaAs Heterojunction Bipolar Transistor Solid State Electronics Liu, W., Costa, D., Harris Jr., J., S. 1991; 34: 1119-1123
The Design of GaAs Resonant Tunneling Diodes with Peak Current Densities over 2x105 a cm-2 J. Appl Phys. Wolak, E., Ozbay, E., Park, B., G., Diamond, S., K., Bloom, D., M., Harris Jr., J., S. 1991; 69: 3345-3350
Study of Optical Plasmons InLa1.85Sr0.15Cu2O4 Physica C Harris, J., S., Kim, J., H., Bozovic, I., Eom, C., B., Geballe, T., H. 1991; 174: 435-439
Quantum Well Modulators for Optical Beam Steering Applications IEEE Phot. Tech. Lett. Pezeshki, B., Apte, R., B., Lord, S., M., Harris, J., S. 1991; 3: 790-792
Novel Cavity Design for High Reflectivity Changes in a Normally Off Electroabsorption Modulator Appl. Phys. Lett. Pezeshki, B., Thomas, D., Harris Jr., J., S. 1991; 58: 813-815
Electroabsorptive Modulators in InGaAs/AlGaAs Appl Phys. Lett. Pezeshki, B., Lord, S., M., Harris Jr., J., S. 1991; 59: 888-890
Effect of High Current Density and Doping Concentration on the Characteristics of GaAs/AlAs Vertically Integrated Resonant Tunneling Diodes J. Appl. Phys. Park, B., G., Wolak, E., Harris Jr., J., S. 1991; 11 (70): 7141 - 7148
Comparison of the Effects of Surface Passivation and Base Quasi-Electric Fields on the Current Gain of AlGaAs/GaAs Heterojunction Bipolar Transistors Grown on GaAs and Si Substrates Appl Phys. Lett. Liu, W., Costa, D., Harris Jr., J., S. 1991; 59: 691-693
The Relative Effect on the Oxygen Concentration in YBa2Cu3O7-d of Atomic and Ionic Oxygen Fluxes, Produced by a Small Compact Electron Cyclotron Resonance Source J. Vac. Sci. Technol. Yamamoto, K., Hammond, R., H., Harris Jr., J., S. 1991; A9: 2587-2593
Molecular Beam Epitaxial Growth and Structural Design In0.52Al0.48As/In0.53Ga0.47As/InP HEMTs J. Crystal. Growth Pao, Y., C., Harris Jr., J., S. 1991; 111: 489-494
High Output Conductance of InAlAs/InGaAs/InP MODFET due to Weak Impact Ionization in the InGaAs Channel IEDM Technical Digest Harris, J., S., Zhou, G., G., Fischer-Colbrie, A., Miller, J., Pao, Y., C., Hughes, B. 1991: 247-250
OPTIMIZATION OF MODULATION RATIO AND INSERTION LOSS IN REFLECTIVE ELECTROABSORPTION MODULATORS APPLIED PHYSICS LETTERS Pezeshki, B., Thomas, D., Harris, J. S. 1990; 57 (15): 1491-1492
View details for Web of Science ID A1990EC36300005
ATOMICALLY LAYERED HETEROEPITAXIAL GROWTH OF SINGLE-CRYSTAL FILMS OF SUPERCONDUCTING BI2SR2CA2CU3OX APPLIED PHYSICS LETTERS Eckstein, J. N., Bozovic, I., VONDESSONNECK, K. E., Schlom, D. G., Harris, J. S., BAUMANN, S. M. 1990; 57 (9): 931-933
View details for Web of Science ID A1990DV75300031
NOVEL DOUBLY SELF-ALIGNED ALGAAS/GAAS HBT ELECTRONICS LETTERS LIU, W. U., Costa, D., Harris, J. 1990; 26 (17): 1361-1362
View details for Web of Science ID A1990DW99500022
IMPROVED DESIGN OF ALAS/GAAS RESONANT TUNNELING DIODES APPLIED PHYSICS LETTERS Cheng, P., Harris, J. S. 1990; 56 (17): 1676-1678
View details for Web of Science ID A1990DA34800023
Growth of untwinned Bi2Sr2Ca2Cu3Ox Thin Films by Atomically Layered Epitaxy Appl. Phys. Lett. Eckstein, J., N., Bozovic, I., Dessonneck, K., E. von, Schlom, D., G., Harris Jr., J., S., Baumann, S., M. 1990: 1049-1051
Superstructure in Thin Films of Bi-Based Compounds on MgO J. J. Appl. Phy Harris, J., S., Kojima, K., Schlom, D., G., Kuroda, K., Tanioku, M., Hamanaka, K. 1990; 9: L1638-L1641
From Bloch Functions to Quantum Wells International J. Modern Physics B Harris Jr., J., S. 1990; 6 (4): 1149-1179
A High Frequency Pnp AlGaAs/InGaAs Heterojunction Bipolar Transistor with an Ultrathin Strained Base Electron. Lett. Liu, W., Hill, D., G., Harris Jr., J., S. 1990; 26: 2000-2002
Optical Anisotropy of Bi2Sr2CaCu208 Phys. Rev. Kim, J., H., Bozovic, I., Mitzi, D., B., Kapitulnik, A., Harris Jr., J., S. 1990; 10 (B41): 7251-7253
Impact of Surface Layer on In0.52Al0.48As/In0.53Ga0.47As/InP High Electron Mobility Transistors IEEE Electron Dev. Lttrs Pao, Y., C., Nishimoto, C., Riaziat, M., Majidi-Ahy, R., Bechtel, N., G., Harris Jr., J., S. 1990; 7 (11): 315-313
Characterization of Surface-Undoped In0.52Al0.48As/In0.53Ga0.47As/InP High Electron Mobility Transistors IEEE Tran. Electron. Dev. Pao, Y., C., Nishimoto, C., K., Majidi-Ahy, R., Archer, J., Bechtel, N., G., Harris Jr., J., S. 1990; 10 (37): 2165-2170
In-Situ Growth of Single Crystal Bi2Sr2CanCun+1Ox Thin Films by Atomically Layered Epitaxy Eckstein, J., N., Bozovic, I., Schlom, D., G., Chen, Z., J., Harris Jr., J., S. 1990
Defect Structures in MBE Grown GaAs on Si Kim, S., D., Ma, T., Rek, Z., Harris Jr., J., S. 1990
Atomically Layered Heteroepitaxy of High Temperature Superconducting Thin Films: Metastable Phases and Superlattice Structures Eckstein, J., N., Bozovic, I., Dessonneck, K., E. von, Schlom, D., G., Harris Jr., J., S. 1990
77K Photoluminescence Investigation of Residual Stress in MBE-Grown GaAs/Si Layers Adkisson, J., W., Harris, J., S., George, T., Weber, E., R. 1990
Influence of Ballistic Electrons on the Device Characteristics of Vertically Integrated Resonant Tunneling Diodes Appl. Phys. Lett Harris, J., S., Rascol, J., J. L., Martin, K., P., Carnahan, R., E., Higgins, R., J., Cury, L. 1990; 14 (58): 1482-1484
RESONANT TUNNELING OF 1-DIMENSIONAL ELECTRONS ACROSS AN ARRAY OF 3-DIMENSIONALLY CONFINED POTENTIAL WELLS SUPERLATTICES AND MICROSTRUCTURES Allee, D. R., Chou, S. Y., Harris, J. S., Pease, R. F. 1990; 7 (2): 131-134
View details for Web of Science ID A1990DT26500007
Molecular Beam Epitaxy-a Path to Novel High Tc Superconductors Harris, J., S., Schlom, D., G., Eckstein, J., N., Bozovic, I., Chen, Z., J., Marshall, A., F. 1990
Two Selective Etching Solutions for GaAs on InGaAs and GaAs/AlGaAs on InGaAs J. Electrochem. Soc. Hill, D., G., Lear, K., L., Harris Jr., J., S. 1990; 9 (137): 2913-2914
Molecular Beam Epitaxial Growth of Layered Bi-Sr-Ca-Cu-O Compounds J. Cryst. Growth. Harris, J., S., Schlom, D., G., Marshall, A., F., Sizemore, J., T., Chen, Z., J., Eckstein, J., N. 1990: 361-375
Quantum Wells and Artificially Structured Materials for Non-Linear Optics Harris Jr., J., S., Fejer, M., M. 1990
Improved Design of AlAs/GaAs Resonant Tunneling Diodes Cheng, P., Harris Jr., J., S. 1990
A new Direct Method for Determining the Heterojunction Bipolar Transistor Equivalent Circuit Model Costa, D., Liu, W., Harris Jr., J., S. 1990
Optimization of Reflection Electro-Absorption Modulators Pezeshki, B., Thomas, D., Harris Jr., J., S. 1990
In-Situ Growth of Superconducting Single Crystal Bi-Sr-Ca-Cu-O Thin Films by Molecular Beam Epitaxy Bozovic, I., Eckstein, J., N., Schlom, D., G., Harris Jr., J., S. 1990
Growth of Metastable Phases and Superlattice Structures of Bi-Sr-Ca-Cu-O Compounds by an Atomic Layering MBE Technique Schlom, D., G., Marshall, A., F., Harris Jr., J., S., Bozovic, I., Eckstein, J., N. 1990
Comparison of Pnp AlGaAs/GaAs Heterojunction Bipolar Transistor with and Without Base Quasielectric Field Liu, W., Hill, D., Costa, D., Harris Jr., J., S. 1990
Ballistic Electron Contributions in Vertically Integrated Resonant Tunneling Diodes Harris, J., S., Rascol, J., L., Martin, K., P., Carnahan, R., E., Higgins, R., J., Cury, L. 1990
From Bloch Functions to Quantum Wells Conductivity and Magnetism, The Legacy of Felix Bloch Harris Jr., J., S. edited by Little, William, A. World Scientific, Singapore. 1990: 23-53
Wannier-Stark Localization in a Strained InGaAs/GaAs Superlattice Appl. Phys. Lett. Pezeshki, B., Thomas, D., Harris Jr., J., S. 1990; 20 (57): 2116-2117
Uniform, High-Gain AlGaAs/In0.05Ga0.95As/GaAs P-n-p Heterojunction Bipolar Transistors by Dual Selective Etch Process IEEE Electron Device Lett. Hill, D., G., Lee, W., S., Ma, T., Harris Jr., J., S. 1990; 11: 425-427
Large Reflectivity Modulation Using InGaAs-GaAs IEEE Photon. Techn. Lett. Pezeshki, B., Thomas, D., Harris Jr., J., S. 1990; 2: 807-809
RESONANT TUNNELING DIODES FOR SWITCHING APPLICATIONS APPLIED PHYSICS LETTERS DIAMOND, S. K., Ozbay, E., Rodwell, M. J., Bloom, D. M., Pao, Y. C., Harris, J. S. 1989; 54 (2): 153-155
View details for Web of Science ID A1989R651600024
Effect of Emitter-Base Spacing on the Current Gain of AlGaAs/GaAs Heterojunction Bipolar Transistors IEEE Electron Device Letters Lee, W., S., Ueda, D., Ma, T., Pao, Y., C., Harris Jr., J., S. 1989: 200-202
The X-Valley Transport in GaAs/AlAs Triple Barrier Structures J. Appl. Phys. Cheng, P., Park, B., G., Kim, S., D., Harris Jr., J., S. 1989; 12 (65): 5199-5201
Influence of As4/Ga Flux Ratio on Be Incorporation in Heavily Doped GaAs Grown by Molecular Beam Epitaxy J. Crystal Growth Pao, Y., C., Franklin, J., Harris Jr., J., S. 1989: 301-304
GaAs/AlGaAs Power HBT on Silicon Substrate Electron. Lett. Ueda, D., Lee, W., S., Ma, T., Costa, D., Harris Jr., J., S. 1989; 19 (25): 1968-1269
Variation of the Spacer Layer Between two Resonant Tunneling Diodes Appl. Phys. Lett. Wolak, E., Park, B., G., Lear, K., L., Harris Jr., J., S. 1989: 1871-1873
Molecular Beam Epitaxy AlGaAs/GaAs Grown in the Presence of Hydrogen J. Crystal Growth Pao, Y., C., Liu, D., Harris Jr., J., S. 1989: 305-308
MBE Growth of High Critical Temperature Superconductors J. Crystal Growth Harris Jr., J., S., Eckstein, J., N., Eckstein, J., N., Schlom, D., G. 1989: 607-616
Effect of Bulk Recombination Current on the Current Gain of GaAs/AIGaAs Heterojunction Bipolar Transistors in GaAs-on-Si IEEE Electron Dev. Lett. Ma, T., Lee, W., S., Adkisson, J., Harris Jr., J., S. 1989; 10 (10): 458-460
AlGaAs/InGaAs Strained-Base PnP Heterojunction Bipolar Transistors Electron. Lett. Hill, D., G., Lee, W., S., Ma, T., Harris Jr., J., S. 1989: 993-995
Resonant Tunneling Diodes for Switching Applications Harris, J., S., Diamond, S., K., Özbay, E., Rodwell, M., J. W., Bloom, D., M., Pao, Y., C. 1989
Monolithically Integrated Fiber-Optic Front-End Receiver in GaAs on Si Technology Nasserbakht, N., Adkisson, J., W., Kamins, T., I., Wooley, B., A., Harris Jr., J., S. 1989
Microwave Characteristics of MBE Grown Resonant Tunneling Devices Owens, J., M., Halchin, D., J., Lear, K., L., Lee, W., S., Harris Jr., J., S. 1989
Improved Vertically Integrated Resonant Tunneling Diodes Park, B., G., Wolak, E., Lear, K., L., Harris Jr., J., S. 1989
Photonics Brief Lessons in High Technology: Understanding the End of this Century to Capitalize on the Next Harris, J., S. edited by Meindl, James, D. Portable Stanford, Stanford, CA. 1989: 31-61
Reduction of Gallium-Related Oval Defects J. Vac. Sci. & Technol. Schlom, D., G., Lee, W., S., Ma, T., Harris Jr., J., S. 1989; 2 (B7): 296-298
Many-Body Effects in the Luminescence Spectra of GaAs/AlGaAs Modulation Doped Heterostructures ACTA Physica Polonica Munnix, S., Bimberg, D., Mars, D., E., Miller, J., N., Larkins, E., C., Harris Jr., J., S. 1989: 33-37
Influence of the As:Ga Flux Ratio on Growth Rate, Interface Quality, and Impurity Incorporation in AlGaAs/GaAs Quantum Wells Grown by Molecular Beam Epitaxy Appl. Phys. Lett. Köhrbröck, R., Munnix, S., Bimberg, D., Larkins, E., C., Harris Jr., J., S. 1989; 7 (54): 623-625
Growth Kinetics, Impurity Incorporation, Defect Generation, and Interface Quality of MBE-grown AlGaAs/GaAs Quantum Wells: Role of group III and group V Fluxes J. Vac. Sci. Technol. Munnix, S., Bauer, R., K., Bimberg, D., Harris Jr., J., S., Köhrbrück, R., Larkins, E., C. 1989; 4 (B7): 704-709
Umklapp Electron-Electron Scattering Resistivity in YBa2Cu3O7-x IEEE Elect. Dev. Lett. Harris, J., S., Hellman, E., S. 1989; 3 (10): 104-106
Observation of Extremely Large Quadratic Susceptibility at 9.6 - 10.8µm in Electric-field-biased AlGaAs Quantum Wells Phys, Rev. Lett. Fejer, M., M., Yoo, S., J. B., Byer, R., L., Harwit, A., Harris Jr., J., S. 1989; 1 (62): 1041-1044
Development of Molecular Beam Epitaxial Growth of High Temperature Superconducting Compounds Eckstein, J., N., Harris Jr., J., S., Schlom, D., G., Bozovic, I., von Dessoneck, K., E., Chen, Z., J. 1989
New Lateral Resonant Tunneling FETs Fabricated Using Molecular Beam Epitaxy and Ultra-High Resolution Electron Beam Lithography Chou, S., Y., Allee, D., R., Pease, R., F. W., Harris Jr., J., S. 1989
Molecular Beam Epitaxy of Layered Bi-Sr-Ca-Cu-O Compounds Harris, J., S., Schlom, D., G., Eckstein, J., N., Bozovic, I., Marshall, A., F., Sizemore, J., T. 1989
The Effect of Si Doping in AlAs Barrier Layers of AlAs-GaAs-AlAs Double Barrier Resonant Tunneling Diodes Appl. Phys. Lett. Cheng, P., Harris Jr., J., S. 1989; 6 (55): 572-574
Phase Characterization of Dysprosium Barium Copper Oxide Thin Films Grown on Strontium Titanate by Molecular Beam Epitaxy J. Mater. Res. Hellman, E., S., Schlom, D., G., Marshall, A., F., Streiffer, S., K., Harris Jr., J., S., Beasley, M., R. 1989; 3 (4): 476-495
Fabrication of Resonant Tunneling Diodes for Integrated Circuit and Microwave Applications IEEE Electron Device Letters Harris, J., S., Diamond, S., K., Ozbay, E., Rodwell, M., J. W., Bloom, D., M., Pao, Y., C. 1989: 104-106
Epitaxial Growth of High Temperature Superconducting Thin Films J. Vac. Sci. & Technol. Harris, J., S., Eckstein, J., N., Schlom, D., G., Hellman, E., S., Dessonneck, K., E. von, Chen, Z., J. 1989; 2 (B7): 319-323
Elastic Scattering in Resonant Tunneling Devices With One Degree of Freedom J. of Superlattices and Microstructures Wolak, E., Shepard, K., Chou, S., Y., Harris Jr., J., S. 1989; 2 (5): 251-253
PROCESSING AND CHARACTERIZATION OF GAAS GROWN INTO RECESSED SILICON JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B ADKISSON, J. W., Kamins, T. I., Koch, S. M., Harris, J. S., Rosner, S. J., Reid, G. A., Nauka, K. 1988; 6 (2): 717-719
View details for Web of Science ID A1988N138700054
RESONANT TUNNELING OF ELECTRONS OF ONE OR 2-DEGREES OF FREEDOM APPLIED PHYSICS LETTERS Chou, S. Y., Wolak, E., Harris, J. S. 1988; 52 (8): 657-659
View details for Web of Science ID A1988M163700021
A LATERAL RESONANT TUNNELING FET SUPERLATTICES AND MICROSTRUCTURES Chou, S. Y., Wolak, E., Harris, J. S., Pease, R. F. 1988; 4 (2): 181-186
View details for Web of Science ID A1988N360300011
Limit Cycle Oscillations in Negative Differential Resistance Devices J. Appl. Phys. Hellman, E., S., Lear, K., L., Harris Jr., J., S. 1988; 5 (64): 2798-2800
Elastic Scattering Centers in Resonant Tunneling Diodes Appl. Phys. Lett. Harris, J., S., Wolak, E., Lear, K., L., Pitner, P., M., Hellman, E., S., Park, G., B. 1988; 3 (53): 201-203
Effect of Strain on the Band Structure of GaAs and In0.2Ga0.8As Appl. Phys. Lett. Harris, J., S., Hwang, J., Shih, C., K., Pianetta, P., Kubiak, G., D., Stulen, R., H. 1988; 4 (52): 308-310
A Lateral Resonant Tunneling Field-Effect Transistor Appl. Phys. Lett. Chou, S., Y., Harris Jr., J., S., Pease, R., F. W. 1988; 23 (52): 1982-1984
Flux Ratio Dependence of Growth Rate, Interface Quality, and Impurity Incorporation in MBE Grown AlGaAs/GaAs Quantum Wells Köhrbrück, R., Munnix, S., Bimberg, D., Larkins, E., C., Harris Jr., J., S. 1988
Molecular Beam Epitaxy and Deposition of High Tc Superconductors J. Vac. Sci. Technol. B Hellman, E., S., Schlom, D., G., Missert, N., Char, K., Harris Jr., J., S., Beasley, M., R. 1988; 2 (6): 799-803
(110)-Oriented GaAs MESFETs IEEE Elect. Dev. Lett. Pao, Y., C., Ou, W., Harris Jr., J., S. 1988; 3 (9): 119 - 123
Sodium Sulfide Treated (100) and Misoriented (110) GaAs Surfaces Harris, J., S., Liu, D., Larkins, E., C., Zhang, T., Chiang, T., T., LaRue, R., A. 1988
The Effect of Elastic Scattering Centers on the Current Voltage Characteristics of Double Barrier Resonant Tunneling Diodes Harris, J., S., Wolak, E., Lear, K., L., Pitner, P., M., Park, G., B., Hellman, E., S. 1988
Heteronucleation Onto Si Surfaces Harris, J., S., Hull, R., Bean, J., C., Chand, N., Leibenguth, R., E., Bahnck, D. 1988
Growth of GaAs on Si in Masked, Etched Trenches Adkisson, J., W., Kamins, T., I., Koch, S., M., Harris Jr., J., S., Rosner, S., J., Nauka, K. edited by Choi, H., K., Hull, R., Ishiwars, H. 1988
Influence of Buffer Layer Thickness on DC Performance of GaAs/AlGaAs Heterojunction Bipolar Transistors Grown on Silicon Substrates IEEE Electron Device Lett. Ma, T., Ueda, D., Lee, W. S., Adkisson, J., Harris Jr., J., S. 1988; 12 (9): 657-659
Hot Electron Transport Parallel to Strong Magnetic Fields in Gallium Arsenide Solid State Electronics Hellman, E., S., Harris Jr., J., S. 1988; 31 (3/4): 785-788
Electron Saturation Velocity Variation in InGaAs and GaAs Channel MODFETs for Gate Lengths to 550 Å IEEE Electron Device Lett. de la Houssaye, P., R., Allee, D., R., Pao, Y., C., Schlom, D., G., Harris Jr., J., S., Pease, R., F. W. 1988; 3 (9): 148-150
Monolithic Integration of GaAs/AlAs Resonant Tunnel Diode Load and GaAs Enhancement-Mode MESFET Drivers for Tunnel Diode FET Logic Gates Lear, K., L., Yoh, K., Harris Jr., J., S. 1988
High Carrier Densities in GaAs/AlGaAs Modulation n-Doped Quantum Wells: From One- to Two-Component Plasma Munnix, S., Bimberg, D., Mars, D., E., Miller, J., N., Larkins, E., C., Harris Jr., J., S. 1988
Summary Abstract: MBE Growth of Tunable Multi-Layer Interference Optical Modulators J. Vac. Sci. Technol. B. Yoffe, W., Schlom, D., G., Harris Jr., J., S. 1988; 2 (6): 688
Molecular Beam Epitaxy of Layered Dy-Ba-Cu-O Compounds Appl. Phys. Lett. Schlom, D., G., Eckstein, J., N., Hellman, E., S., Streiffer, S., K., Harris Jr., J., S., Beasley, M., R. 1988; 17 (53): 1660-1662
Substrate Surface Structure and Nucleation Phenomena in Epitaxial Growth of GaAs on Vicinal Si (100) Substrates Hull, R., Koch, S., M., Harris Jr., J., S. 1988
Sub-100 nm Gate Length GaAs MESFETs and MODFETs Fabricated by a Combination of Molecular Beam Epitaxy and Electron Beam Lithography Allee, R., Houssaye, P., R. de la, Schlom, D., G., Harris Jr., J., S., Pease, R., F. W. 1988
Room-Temperature Observation of Resonant Tunneling Through a AlGaAs/GaAs Quasi-Parabolic Quantum Well Grown by MBE Appl. Phys. Lett. Chou, S., Y., Harris Jr., J., S. 1988; 17 (52): 1422-1424
Sulfur Incorporation in Undoped High Purity n-Type GaAs Grown by Molecular Beam Epitaxy Harris, J., S., Lee, B., Kim, M., H., Bose, S., S., Stillman, G., E., Larkins, E., C. 1988
Spatial Inhomogeneities of the Luminescence and Electrical Properties of MBE Grown GaAs on Si Reid, A., Nauka, K., Rosner, S., J., Koch, S., M., Harris Jr., J., S. 1988
Picosecond Pulsing and Sampling by GaAs Photodetectors Fabricated on Silicon Substrates Harris, J., S., Morse, J., D., Pocha, M., D., Dutton, R., W., Anderson, G., D., Adkisson, J., W. 1988
Molecular Beam Epitaxy of Layered DY-BA-CU-O Compounds Schlom, D., G., Eckstein, J., N., Hellman, E., S., Webb, C., Turner, F., Harris Jr., J., S. 1988
GaAs/Si Nucleation and Buffer Layer Growth Koch, S., M., Hull, R., Rosner, S., J., Harris Jr., J., S. 1988
Characterization of AlGaAs and GaAs Materials and Interfaces Grown on Misoriented (110) GaAs by MBE Larkins, E., C., Liu, D., Pao, Y., C., Lin, M., J., Yoffe, G., W., Harris Jr., J., S. 1988
Summary Abstract: Growth of GaAs and AlGaAs on misoriented (110) GaAs by Molecular Beam Epitaxy J. Vac. Sci. Technol. B Larkins, E., C., Pao, Y., C., Liu, D., Lin, J., Yoffe, G., Harris Jr., J., S. 1988; 2 (6): 636-637
Deep Level Transient Spectroscopy Study of GaAs Surface States Treated With Inorganic Sulfides Appl. Phys. Lett. Liu, D., Zhang, T., LaRue, R., A., Harris Jr., J., S., Sigmon, T., W. 1988; 12 (53): 1059-1061
Characterization of Al0.25Ga0.75As Grown by Molecular Beam Epitaxy J. Vac. Sci. Technol. B Harris, J., S., Lin, M., J., Larkins, E., C., Pao, Y., C., Liub, D., Yoffe, G. 1988; 2 (6): 631-635
OBSERVATION OF STARK SHIFTS IN QUANTUM-WELL INTERSUBBAND TRANSITIONS APPLIED PHYSICS LETTERS Harwit, A., Harris, J. S. 1987; 50 (11): 685-687
View details for Web of Science ID A1987G640500020
INFRARED TRANSMISSION SPECTROSCOPY OF GAAS DURING MOLECULAR-BEAM EPITAXY JOURNAL OF CRYSTAL GROWTH Hellman, E. S., Harris, J. S. 1987; 81 (1-4): 38-42
View details for Web of Science ID A1987G305600008
THE GROWTH OF GAAS ON SI BY MBE JOURNAL OF CRYSTAL GROWTH Koch, S. M., Rosner, S. J., Hull, R., Yoffe, G. W., Harris, J. S. 1987; 81 (1-4): 205-213
View details for Web of Science ID A1987G305600039
POLYNOMIAL KINETIC-ENERGY APPROXIMATION FOR DIRECT-INDIRECT HETEROSTRUCTURES SUPERLATTICES AND MICROSTRUCTURES Hellman, E. S., Harris, J. S. 1987; 3 (2): 167-169
View details for Web of Science ID A1987G781700015
Complementary MODFET Circuits Consisting of Pseudomorphic N-MODFET and Double Heterojunction P-MODFET by MBE, IEDM Washington, DC Yoh, K., Harris Jr., J., S. 1987: 892
Modulation of Light by Electrically Tunable Multi-Layer Interference Filter Appl. Phys. Lett. Yoffe, G., W., Schlom, D., G., Harris Jr., J., S. 1987; 23 (51): 1876-1878
Determination of the Natural Valence-Band Offset in InxGa1-xAs System Appl. Phys. Lett. Hwang, J., Pianetta, P., Shih, C., K., Spicer, W., E., Pao, Y., C., Harris Jr., J., S. 1987; 20 (51): 1632 - 1634
The Nucleation and Growth of GaAs on Si Harris Jr., J., S., Koch, S., M., Rosner, S., J. 1987
Nucleation of GaAs on Vicinal Si(100) Surfaces Hull, R., Fischer-Colbrie, A., Koch, S., M., Harris Jr., J., S. 1987
Relationship Between Substrate Cleaning, Surface Structure and Nucleation Phenomena in Heteroepitaxial Growth on Si extended Abstracts of Electrochemical, Materials Research Society Meeting, Honolulu, Hawaii Hull, R., Bean, J., C., Leibenguth, R., Koch, S., M., Harris Jr., J., S. 1987
Device and material characterization of molecular-beam epitaxial (110) GaAa/AlGaAs J. Electron. Mat. Pao, Y., C., Gabrial, N., Liu, D., Harris Jr., J., S., Parechanian, L., Webber, E., R. 1987; 4 (16): A16
A p-Channel Strained Quantum Well Modulation Doped Field Effect Transistor Extended Abstracts of the Japan Society of Applied Physics Meeting, Tokyo Yoh, K., Harris Jr., J., S. 1987; 804.83
Sub-100 nm Gate Length GaAs MESFETs Fabricated by Molecular Beam Epitaxy and Electron Beam Lithography Allee, D., R., Houssaye, P., R. de la, Schlom, D., G., Langley, B., W., Harris Jr., J., S., Pease, R., F. W. 1987
Deep Electron Traps in MBE GaAs on Si Nauka, K., Reid, G., A., Rosner, S., J., Koch, S., M., Harris Jr., J., S. 1987
Growth of High Tc Superconducting Thin Films using Molecular Beam Epitaxy Techniques Appl. Phys. Lett. Harris, J., S., Webb, C., Weng, S., L., Eckstein, J., N., Missert, N., Char, K. 1987; 15 (51): 1191
Comment on Observation of a Negative Differential Resistance due to Tunneling through a Single Barrier into a Quantum Well Appl. Phys. Lett. Wolak, E., Harwit, A., Harris Jr., J., S. 1987; 22 (50)
Structural Characterization of Thin, Low Temperature Films of GaAs on Si Substrates Rosner, S., J., Koch, S., M., Harris Jr., J., S. 1987
Infra-Red Transmission Spectroscopy of GaAs during Molecular Beam Epitaxy J. Cryst. Growth Hellman, E., S., Harris Jr., J., S. 1987; 81: 38-42
GaAs with Very Low Acceptor Impurity Background Grown by Molecular Beam Epitaxy J. Cryst. Growth Larkins, E., C., Hellman, E., S., Schlom, D., G., Harris Jr., J., S., Kim, M., H., Stillman, G., E. 1987; 81: 344-348
The Influence of Substrates on Implanted Layer Characteristics Johannessen, J., S., Harris Jr., J., S., Rensch, D., B., Winston, H., V., Hunter, A., T., Kocot, C. 1987
POLARON TRANSPORT IN QUASI-ONE-DIMENSIONAL SEMICONDUCTOR HETEROSTRUCTURES SURFACE SCIENCE Hellman, E. S., Harris, J. S. 1986; 174 (1-3): 459-465
View details for Web of Science ID A1986D965500078
ENERGY-MOMENTUM RELATION FOR POLARONS CONFINED TO ONE DIMENSION PHYSICAL REVIEW B Hellman, E. S., Harris, J. S. 1986; 33 (12): 8284-8290
View details for Web of Science ID A1986C899400045
Calculated Quasi-Eigenenstates and Quasi-Eigenenergies of Quantum Well Superlattices in an Applied Field J. Appl. Phys. Harwit, A., Harris Jr., J., S., Kapitulnik, A. 1986; 9 (60): 3211-13
Microstructure of Thin Layers of MBE-Grown GaAs on Si Substrates Rosner, S., J., Koch, S., M., Laderman, S., Harris Jr., J., S. edited by Fan, J., C. C., Poate, J., M. 1986
Stanford University: Stanford Electronics Laboratory and Microwave Ginzton Laboratory Forthieth Anniversary of the Joint Services Electronics Program Harris, S., E., Harris Jr., J., S. edited by Shostak, A. ANSER, Arlington, VA. 1986
Surface Effect-Induced Fast Be Diffusion in Heavily Doped GaAs Grown by Molecular Beam Epitaxy J. Appl. Phys. Harris, J., S., Pao, Y., C., Hierl, T., Cooper, T. 1986; 1 (60): 201-204
Reduction of the Acceptor Impurity Background in GaAs Grown by Molecular Beam Epitaxy Appl. Phys. Lett. Larkins, E., C., Hellman, E., S., Schlom, D., G., Harris Jr., J., S., Kim, M., H., Stillman, G., E. 1986; 7 (49): 391-3
Mechanism of Current Modulation by Optic Phonons in Heterojunction Tunneling Experiments Phys. Rev. B Harris, J., S., Hanna, C., B., Hellman, E., S., Laughlin, R., B. 1986; 8 (34): 5475-83
Atomic Structure of the GaAs/Si Interface Appl. Phys. Lett. Hull, R., Rosner, S., J., Koch, S., M., Harris Jr., J., S. 1986; 25 (49): 1714-16
Material Effects on the Cracking Efficiency of Molecular Beam Epitaxy Arsenic Cracking Furnaces J. Vac. Sci. Technol. Lee, R., L., Schaffer, W., J., Chai, Y., G., Liu, D., Harris Jr., J., S. 1986; 2 (B4): 568-70
Effect of Hydrogen on Undoped and Lightly Si-Doped Molecular Beam Epitaxial GaAs Layers Appl. Phys. Lett. Pao, Y., C., Liu, D., Lee, W., S., Harris Jr., J., S. 1986; 19 (48): 1291-3
Nucleation and Initial Growth of GaAs on Si Substrate Appl. Phys. Lett. Rosner, S., J., Koch, S., M., Harris Jr., J., S. 1986; 26 (49): 1764-66
Molecular Beam Epitaxy of Gallium Arsenide using Direct Radiative Substrate Heating J. Vac. Sci. Technol. Hellman, E., S., Pitner, P., M., Harwit, A., Liu, D., Yoffe, G., W., Harris Jr., J., S. 1986; 2 (B4): 574-7
The Growth of GaAs on Si by Molecular Beam Epitaxy Koch, S., M., Rosner, S., J., Schlom, D., G., Harris Jr., J., S. edited by Fan, J., C. C., Poate, J., M. 1986
One Dimensional Polaron Effects and Current Inhomogeneities in Sequential Phonon Emission Physica Hellman, E., S., Harris Jr., J., S., Hanna, C., B., Laughlin, R., B. 1985; 134B: 41-46
Heterojunction Bipolar Transistors J. J. Appl. Phys Harris Jr., J., S., Miller, D., L., Asbeck, P., M. 1982; 22: 379
GaAs/AlGaAs Tunnel Junctions for Multiple Bandgap Solar Cells J. Appl. Phys. Miller, D., L., Zehr, S., W., Harris Jr., J., S. 1982; 53: 744
Heterojunction Bipolar Transistors Harris Jr., J., S., Miller, D., L., Asbeck, P., M. 1982
An MBE AlGaAs/GaAs Heterojunction Bipolar Transistor Miller, D., L., Harris Jr., J., S., Asbeck, P., M. edited by Sugano, T. 1981
(Ga,Al)As/GaAs Bipolar Transistors for Digital Integrated Circuits Asbeck, P., M., Miller, D., L., Milano, R., A., Harris Jr., J., S., Kaelin, G., R., Zucca, R. 1981
High Performance AlGaAs/GaAs Heterojunction CCDs for Imaging Applications Adv. Astronomical Sciences Harris Jr., J., S., Reitz, L., R. 1981; 45: 197
High Performance AlGaAs/GaAs Heterojunction CCDs for Imaging Applications Harris Jr., J., S., Reitz, L., R. 1981
Measurement of Isotype Heterojunction Barriers by C-V Profiling Appl. Phys. Lett. Kroemer, H., Chien, W., Yi, Harris Jr., J., S., Edwall, D., D. 1980; 36: 295
Low Bandgap (0.7 to 1.1 eV) Solar Cells in the GaAlAsSb/GaSb System Liu, Y., Z., Yang, H., T., Harris Jr., J., S. 1980
MBE GaAs Heteroface Solar Cells Grown on Ge Appl. Phys. Lett. Miller, D., L., Harris Jr., J., S. 1980; 37: 1104
A Backside-Illuminated Imaging AlGaAs/GaAs Charge Coupled Device Appl. Phys. Lett. Liu, Y., Z., Deyhimy, I., Anderson, R., J., Milano, R., A., Cohen, M., J., Harris Jr., J., S. 1980; 37: 803
Solar Cell Characterization at Rockwell International Cohen, M., J., Cape, J., A., Paul, M., D., Miller, D., L., Harris Jr., J., S. 1980
Gallium Arsenide Photovoltaic Dense Array for Concentrator Applications Cape, J., A., Harris Jr., J., S., Wiczer, J. 1980
A Non-Lattice Matched Monolithic Multicolor Solar Cell Harris, J., S., Zehr, S., W., Yang, H., T., Yang, J., J. J., Coleman, J., J., Miller, D., L. 1980
Schottky Barrier Formation in Polycrystal GaAs J. Vac. Sci. Technol. Cohen, M., J., Paul, M., D., Miller, D., L., Waldrop, J., R., Harris Jr., J., S. 1980; 17: 899
GaAs and Related Heterojunction Charge Coupled Devices IEEE Trans. Electron Dev. Deyhimy, I., Eden, R., C., Harris Jr., J., S. 1980; ED-27: 1172
Barrier Height Enhancement in Heterojunction Schottky Barrier Solar Cells IEEE Trans. Electron Dev Yang, H., T., Shen, Y., D., Edwall, D., D., Miller, D., L., Harris Jr., J., S. 1980; ED-27: 851
Monolithic Multicolor Solar Conversion Harris, J., S., Zehr, S., W., Yang, H., T., Coleman, J., J., Miller, D., L., Yang, J., J. J. 1980
Gallium Arsenide Photovoltaic Dense Array for Concentrator Applications Wiczer, J., J., Cape, J., A., Harris Jr., J., S. 1980
Heterojunction Schottky Barrier Solar Cells Yang, H., T., Miller, D., L., Shen, Y., D., Edwall, D., D., Harris Jr., J., S. 1980
Observation of Charge Storage and Charge Transfer in a GaAlAsSb/GaSb CCD Appl. Phys. Lett Liu, Y., Z., Deyhimy, I., Harris Jr., J., S., Anderson, R., J., Appelbaum, J. 1980; 36: 458
A 500 MHz GaAs Charge Coupled Device Appl. Phys. Lett. Deyhimy, I., Eden, R., C., Edwall, D., D., Anderson, R., J., Harris Jr., J., S. 1980; 36: 151
Performance Losses in High Efficiency Monolithic Multijunction Solar Cells Zehr, S., W., Cape, J., A., Harris Jr., J., S. 1980
Charge Coupled Devices in Gallium Arsenide Deyhimy, I., Anderson, R., J., Eden, R., C., Harris Jr., J., S. 1980
Analog Signal Processing Complement to GaAs Digital ICs Deyhimy, I., Harris Jr., J., S., Eden, R., C., Anderson, R., J. 1979
Reduced Geometry GaAs CCD for High Speed Signal Processing J. J. Appl. Phys Deyhimy, I., Harris Jr., J., S., Eden, R., C., Anderson, R., J. 1979; 19: 269
Minimum Al0.5Ga0.5As-GaAs Heterojunction Width Determined by Sputter-Auger Technique Appl. Phys. Lett Garner, C., M., Su, C., Y., Spicer, W., E., Edwood, P., D., Miller, D., Harris, J., S. 1979; 34: 610
High Efficiency AlGaAs/GaAs Concentrator Solar Cells Appl. Phys. Lett. Sahai, R., Edwall, D., D., Harris, J., S. 1979; 34: 147
Reduced Geometry GaAs CCD for High Speed Signal Processing Deyhimy, I., Harris Jr., J., S., Eden, R., C., Anderson, R., J. 1979
Intercell Ohmic Contacts for High Efficiency Multijunction Solar Converters Stanley, W., Zehr, Miller, D., L., Harris Jr., J., S. 1979
20 KW Gallium Arsenide Photovoltaic Dense Array for Central Receiver Concentrator Applications Cape, J., A., Sahai, R., Harris, J., S. 1979
Application of GaAs CCD's to High Speed Signal Processing Deyhimy, I., Harris Jr., J., S., Eden, R., C. 1979
An Ultra High Speed GaAs CCD Deyhimy, I., Harris Jr., J., S., Eden, R., C., Anderson, R., J., Edwall, D., D. 1979
259 Gate GaAs CCD Shift Register for High Speed Applications Deyhimy, I., Harris Jr., J., S., Eden, R., C., Anderson, R., J. 1979
Interface Studies of Al Gal As-GaAs Heterojunctions J. Appl. Phys. Harris, J., S., Garner, C., M., Su, C., Y., Shen, Y., D., Lee, C., S., Pearson, G., L. 1979; 50: 3383
GaAlAs/GaAs Heterojunction Schottky Barrier Gate CCD Liu, Y., Z., Deyhimy, I., Anderson, R., J., Harris Jr., J., S., Tomasetta, L., R. 1979
Development of Stacked Multiple Bandgap Solar Cells Harris, J., S., Ruth, R., P., Zehr, S., W., Coleman, J., J., Dupuis, R., D., Yang, H., T. 1979
CCD's in GaAs and Related III-V Compounds Deyhimy, I., Harris, J., S., Edwall, D., D. edited by Wolfe, C., M. 1978
1.0-1.4µm High-Speed Avalanche Photodiodes Appl. Phys. Lett Law, H., D., Tomasetta, L., R., Nakano, K., Harris, J., S. 1978; 33: 416
Ionization Coefficients of Ga0.72Al0.28Sb Avalanche Photodetectors Appl. Phys. Lett Law, H., D., Nakano, K., Tomasetta, L., R., Harris, J., S. 1978; 33: 948
High Efficiency AlGaAs/GaAs Concentrator Solar Cell Development Sahai, R., Edwall, D., D., Harris, J., S. 1978
Carrier Transport at Grain Boundaries in Polycrystalline GaAs Cohen, M., J., Harris, J., S., Waldrop, J., R. 1978
GaAs Charge Coupled Devices Appl. Phys. Lett Deyhimy, I., Harris, J., S., Eden, R., C., Edwall, D., D., Anderson, S., J., Bubulac, L., O. 1978; 32: 383
High Speed GaAs CCD Deyhimy, I., Harris, J., S., Eden, R., C., Edwall, D., D., Anderson, R., J. 1978
(SN)x-GaAs Polymer Semiconductor Solar Cells Appl. Phys. Lett Cohen, M., J., Harris, J., S. 1978; 33: 812
GaAs CCD with High Transfer Efficiency Deyhimy, I., Harris, J., S., Eden, R., C. 1978
Spectrally Split Tandem Cell Converter Studies Cape, J., A., Harris, J., S., Sahai, R. 1978
GaAlAsSb/ GaSb Alloys: Material Preparation and Applications to Optoelectronic Devices Law, H., D., Harris, J., S., Wong, K., C., Tomasetta, L., R. edited by Wolfe, C., M. 1978
A Solar Power System with Gallium Arsenide Solar Cells Madewell, J., F., Nussberger, A., A., Harris, J., S. 1977
Growth and Evaluation of LPE Graded Composition Al Gal As Layers for High Efficiency Graded Bandgap Solar Cells J. Electronic Materials Sahai, R., Harris, J., S., Edwall, D., D., Eisen, F., H. 1977; 6: 645
Gallium Arsenide Concentrator System Miller, R., S., Harris, J., S. 1977
Auger Depth Profiling of Au-AlxGa1-xAs Interfaces and LPE AlxGa1-x-GaAs Heterojunctions J. Vac. Sci. Technol Garner, C., M., Shen, Y., D., Kim, J., S., Pearson, G., L., Spicer, W., E., Harris, J., S. 1977; 14: 985
Auger Profiling of 'Abrupt' LPE Al Gal -xAs/GaAs Heterojunctions J. Appl. Phys Garner, C., M., Shen, Y., D., Kim, J., S., Pearson, G., L., Spicer, W., E., Harris, J., S. 1977; 48: 3147
AlGaSb Alloys for 1.0µm to 1.8µm Heterojunction Devices Anderson, S., H., Scholl, F., Harris, J., S. edited by Eastman, L., F. 1977
High Efficiency Thin Window Ga1-xAlx As/GaAs Solar Cells Sahai, R., Edwall, D., D., Cory, E., Harris, J., S. 1976
Non-destructive Determination of Energy Gap Grading in Thin Films by Optical Transmission Measurements J. Vac. Sci. Technol Hall, W., F., Tennant, W., E., Cape, J., A., Harris, J., S. 1975; 13: 914
The Phase Diagram and its Application to the Liquid Phase Epitaxial Growth of Pb1-xSnxTe J. of Crystal Growth Harris, J., S., Longo, J., T., Gertner, E., R., Clarke, J., E. 1975; 28: 334
Potential Profiling Across Semiconductor Junctions by Auger Electron Spectroscopy in the Scanning Electron Microscope J. Appl. Phys Waldrop, J., R., Harris, J., S. 1975; 46: 5214
Double Heterojunction Photocathode Devices CRC Crit. Rev. Sol. State Sci Sahai, R., Harris, J., S., Eden, R., C., Bubulac, L., O., Chu, J., C. 1975; 5: 565
High Efficiency Graded Bandgap n/p AlxGa1-xAs Solar Cells Hutchby, J., A., Sahai, R., Harris, J., S. 1975
The Influence of Radiation Damage on Ion Implantation Harris, J., S., Eisen, F., H. 1974
Properties of Tellurium Implanted Gallium Arsenide Ion Implantation in Semiconductors and Other Materials Eisen, F., H., Harris, J., S., Welch, B., Pashley, R., D., Sigurd, D., Mayer, J., W. edited by Crowder, B., L. Plenum, New York. 1973: 631
Material Properties of Solution Grown Pb1-x SnxTe J. Nonmetals Longo, J., T., Gertner, E., R., Harris, J., S. 1973; 1: 321
Properties of Tellurium Implanted GaAs Eisen, F., H., Harris, J., S., Welch, B., Pashley, R., D., Sigurd, D., Mayer, J., W. 1972
Fluorine Ion Implantation Profiles in Gallium Arsenide as Determined by Auger Electron Spectroscopy Appl. Phys. Lett Harris, J., S., Harris, J., M., Marcus, H., L. 1972; 21: 598
Influence of Implantation Temperature and Surface Protection on Tellurium Implantation in GaAs Appl. Phys. Lett Harris, J., S., Eisen, F., H., Welch, B., Haskell, J., D., Pashley, R., D., Mayer, J., W. 1972; 21: 601
Material Properties of Solution Grown Pb1-x SnxTe Longo, J., T., Gertner, E., R., Harris, J., S. 1972
Improved Surface Properties of Solution Grown GaAs and Pb1-xSnxTe Epitaxial Layers: A New Technique J. Crystal Growth Longo, J., T., Harris, J., S., Gertner, E., R., Chu, J., C. 1972; 15: 107
The Effects of Dose Rate and Implantation Temperature on Lattice Damage and Electrical Activity in Ion Implanted GaAs Harris, J., S. edited by I., J. 1971
The Effects of Uniaxial Stress on the Electrical Resistivity and the Gunn Effect in n-Type GaAs Phys. Rev.B Harris, J., S., Moll, J., L., Pearson, G., L. 1970; 1: 1660
The Annealing of Damage in Ion Implanted Gallium Arsenide Radiation Effects Harris, J., S., Eisen, F. 1970; 7: 123
Homogeneous Solution Grown Epitaxial GaAs by Tin Doping Solid State Electron Harris, J., S., Snyder, W., L. 1969; 12: 337
Ohmic Contacts to Solution Grown Gallium Arsenide J. Appl. Phys Harris, J., S., Nannichi, Y., Pearson, G., L. 1969; 40: 4575
The Effects of Uniaxial Stress on the Electrical Resistivity of n-Type Boat Grown and Liquid Epitaxial GaAs IEEE Trans. Elect Dev Harris, J., S., Snyder, W., L., Moll, J., L., Pearson, G., L. 1968; ED-14: 690

James Harris

James and Elenor Chesebrough Professor in the School of Engineering and Professor, by courtesy, of Materials Science and Engineering and of Applied Physics

Electrical Engineering

Bio

Academic Appointments

Honors & Awards

Professional Education

Contact

Links

2014-15 Courses

2013-14 Courses

2012-13 Courses

2011-12 Courses

All Publications

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract