EE212 -
Integrated Circuit Fabrication Processes
Overview
The semiconductor industry provides critical enabling technology for many products and fields and has seen periods of rapid growth. While electronic goods dominate the market, communications, medical devices, and the automotive industry show signs of increased potential.
This course provides an overview of device and circuit design and the processing steps for semiconductor device fabrication. Those interested in the physical bases and practical methods of silicon VLSI chip fabrication will learn practical applications and become familiar with the research conducted in Stanford’s Nanofabrication Laboratory. Students will also conduct research in a virtual lab using process simulators.
Instructors
- Peter Griffin Senior Research Scientist, Electrical Engineering
- James Plummer John M. Fluke Prof., Elec. Eng.
Topics Include
- Critical issues in the design of integrated circuits
- Process steps including: crystal growth, epitaxy, oxidation, ion implantation, etching, deposition, lithography and back-end processing
- Modern CMOS technology
- Crystal growth, wafer fabrication and properties of silicon wafers
- Clean rooms and wafer cleaning
- Lithography
Units
3.0
Prerequisites
Undergraduate semiconductor device physics
Other
Tuition & Fees
For course tuition, reduced tuition (SCPD member companies and United States Armed forces), and fees, please click Tuition & Fees.
